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Photonic crystal bandedge membrane lasers on silicon

Applied optics (2004), 2017-11, Vol.56 (31), p.H67

2017

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Nitrogen-related changes in exciton localization and dynamics in GaInNAs/GaAs quantum wells grown by metalorganic vapor phase epitaxy

Applied physics. A, Materials science & processing, 2015-02, Vol.118 (2), p.479-486

2015

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Buried‐Tunnel Junction Current Injection for InP‐Based Nanomembrane Photonic Crystal Surface Emitting Lasers on Silicon

Physica status solidi. A, Applications and materials science, 2020-02, Vol.217 (3), p.n/a

2020

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Reconfigurable frequency coding of triggered single photons in the telecom C-band

Optics express, 2019-05, Vol.27 (10), p.14400-14406

2019

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Selective release of InP heterostructures from InP substrates

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2016-07, Vol.34 (4)

2016

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Plasma frequency and dielectric function dependence on doping and temperature for p-type indium phosphide epitaxial films

Journal of physics. Condensed matter, 2012-10, Vol.24 (43), p.435803-435803

2012

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Influence of base-region thickness on the performance of Pnp transistor-VCSEL

Optics express, 2014-11, Vol.22 (22), p.27398-27414

2014

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Auger recombination in In(Ga)Sb/InAs quantum dots

Applied physics letters, 2015-01, Vol.106 (1), p.013103

2015

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AlGaAs/GaAs/InGaAs pnp-type vertical-cavity surface-emitting transistor-lasers

Optics express, 2015-06, Vol.23 (12), p.15680-15699

2015

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Trench‐Confined InP‐Based Epitaxial Regrowth Using Metal‐Organic Vapor‐Phase Epitaxy

Physica status solidi. A, Applications and materials science, 2018-04, Vol.215 (8), p.n/a

2018

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Performance Optimization of GaAs-Based Vertical-Cavity Surface-Emitting Transistor-Lasers

IEEE photonics technology letters, 2015-04, Vol.27 (7), p.721-724

2015

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Minority current distribution in InGaAs/GaAs transistor-vertical-cavity surface-emitting laser

Applied physics letters, 2013-05, Vol.102 (19), p.191101

2013

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Room‐temperature operation of transistor vertical‐cavity surface‐emitting laser

Electronics letters, 2013-01, Vol.49 (3), p.208-210

2013

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Suppression of higher order transverse and oxide modes in 1.3-mu m InGaAsVCSELs by an inverted surface relief

IEEE photonics technology letters, 2007-03, Vol.19 (8-maj), p.327

2007

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Photoluminescence and photoresponse from InSb/InAs-based quantum dot structures

Optics express, 2012-09, Vol.20 (19), p.21264-21271

2012

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Optical loss and interface morphology in AlGaAs∕GaAs distributed Bragg reflectors

Applied physics letters, 2007-09, Vol.91 (10), p.101101

2007

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LOW-TEMPERATURE METAL-ORGANIC VAPOR-PHASE EPITAXY GROWTH AND PERFORMANCE OF 1.3-mu m GaInNAs/GaAs SINGLE QUANTUM WELL LASERS

Japanese Journal of Applied Physics, 2002, Vol.41 (2B), p.1040-1042

2002

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Highly strained InGaAs ∕ GaAs multiple quantum-wells for laser applications in the 1200-1300 nm wavelength regime

Applied physics letters, 2005-08, Vol.87 (7), p.071104-071104-3

2005

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A performance assessment of type-II interband In0.5Ga0.5Sb QD photodetectors

Infrared physics & technology, 2013-11, Vol.61, p.319-324

2013

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Suppression of Higher Order Transverse and Oxide Modes in 1.3-$\mu$m InGaAs VCSELs by an Inverted Surface Relief

IEEE photonics technology letters, 2007-01, Vol.19 (5), p.327-329

2007

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Photoreflectance investigations of the energy level structure in GaInNAs-based quantum wells

Journal of physics. Condensed matter, 2004-08, Vol.16 (31), p.S3071-S3094

2004

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High-temperature dynamics, high-speed modulation, and transmission experiments using 1.3-μm InGaAs single-mode VCSELs

Journal of lightwave technology, 2007, Vol.25 (9), p.2791-2798

2007

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Long-wavelength infrared photoluminescence from InGaSb/InAs quantum dots

Infrared physics & technology, 2013-07, Vol.59, p.89-92

2013

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A performance assessment of type-II interband In0.5Ga 0.5Sb QD photodetectors

Infrared physics & technology, 2013, Vol.61, p.319

2013

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High-power InGaAs/GaAs 1.3 mu m VCSELs based on novel electrical confinement scheme: Erratum

Electronics letters, 2008, Vol.44 (13)

2008

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Photonic crystal bandedge membrane lasers on silicon

Nitrogen-related changes in exciton localization and dynamics in GaInNAs/GaAs quantum wells grown by metalorganic vapor phase epitaxy

Buried‐Tunnel Junction Current Injection for InP‐Based Nanomembrane Photonic Crystal Surface Emitting Lasers on Silicon

Reconfigurable frequency coding of triggered single photons in the telecom C-band

Selective release of InP heterostructures from InP substrates

Plasma frequency and dielectric function dependence on doping and temperature for p-type indium phosphide epitaxial films

Influence of base-region thickness on the performance of Pnp transistor-VCSEL

Auger recombination in In(Ga)Sb/InAs quantum dots

AlGaAs/GaAs/InGaAs pnp-type vertical-cavity surface-emitting transistor-lasers

Trench‐Confined InP‐Based Epitaxial Regrowth Using Metal‐Organic Vapor‐Phase Epitaxy

Performance Optimization of GaAs-Based Vertical-Cavity Surface-Emitting Transistor-Lasers

Minority current distribution in InGaAs/GaAs transistor-vertical-cavity surface-emitting laser

Room‐temperature operation of transistor vertical‐cavity surface‐emitting laser

Suppression of higher order transverse and oxide modes in 1.3-mu m InGaAsVCSELs by an inverted surface relief

Photoluminescence and photoresponse from InSb/InAs-based quantum dot structures

Optical loss and interface morphology in AlGaAs∕GaAs distributed Bragg reflectors

LOW-TEMPERATURE METAL-ORGANIC VAPOR-PHASE EPITAXY GROWTH AND PERFORMANCE OF 1.3-mu m GaInNAs/GaAs SINGLE QUANTUM WELL LASERS

Highly strained InGaAs ∕ GaAs multiple quantum-wells for laser applications in the 1200-1300 nm wavelength regime

A performance assessment of type-II interband In0.5Ga0.5Sb QD photodetectors

Suppression of Higher Order Transverse and Oxide Modes in 1.3-$\mu$m InGaAs VCSELs by an Inverted Surface Relief

Photoreflectance investigations of the energy level structure in GaInNAs-based quantum wells

High-temperature dynamics, high-speed modulation, and transmission experiments using 1.3-μm InGaAs single-mode VCSELs

Long-wavelength infrared photoluminescence from InGaSb/InAs quantum dots

A performance assessment of type-II interband In0.5Ga 0.5Sb QD photodetectors

High-power InGaAs/GaAs 1.3 mu m VCSELs based on novel electrical confinement scheme: Erratum

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