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First-principles study of the incorporation and diffusion of helium in cubic zirconia

Journal of nuclear materials, 2011-11, Vol.418 (1), p.143-151

2011

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Heavy Ion and Laser Microbeam Induced Current Transients in SiGe Heterojunction Bipolar Transistor

Chinese physics letters, 2017-10, Vol.34 (10), p.108501

2017

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First-Principles Study of Water Reaction and H2 Formation on UO2 (111) and (110) Single Crystal Surfaces

Journal of physical chemistry. C, 2014-09, Vol.118 (38), p.21935-21944

2014

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An investigation of ionizing radiation damage in different SiGe processes

Chinese physics B, 2017-08, Vol.26 (8), p.551-556

李培刘默寒贺朝会郭红霞张晋新马婷

2017

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Three-dimensional simulation of fabrication process-dependent effects on single event effects of SiGe heterojunction bipolar transistor

Chinese physics B, 2017-08, Vol.26 (8), p.542-550

张晋新贺朝会郭红霞李培郭宝龙吴宪祥

2017

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First-principles study of H2 adsorption and dissociation on Zr(0001)

Journal of nuclear materials, 2011-11, Vol.418 (1-3), p.159-164

2011

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Biodiversity and Ecoadaptability of Legumes

Advanced materials research, 2013, Vol.610-613, p.3488-3494

2013

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Analysis of SEE modes in ferroelectric random access memory using heavy ions

2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA), 2019, p.1-5

2019

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Key Factors of Laser-Induced Single Event Transients on Different SiGe Process

IEEE transactions on nuclear science, 2023, p.1-1

2023

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Classification of PRSS1 variants responsible for chronic pancreatitis: An expert perspective from the Franco-Chinese GREPAN Study Group

Pancreatology : official journal of the International Association of Pancreatology (IAP) ... [et al.], 2023-08, Vol.23 (5), p.491-506

2023

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Experimental study on radiation effects in floating gate read-only-memories and static random access memories

Chinese physics (Beijing, China), 2007-09, Vol.16 (9), p.2773-2778

2007

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Dependence of decay time of the photocurrent induced by transient ionizing radiation on TID in NPN bipolar transistors

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2020-05, Vol.470, p.32-37

2020

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Comparison of holes trapping and protons transport induced by low dose rate gamma radiation in oxide on different SiGe processes

Microelectronics and reliability, 2019-12, Vol.103, p.113499, Article 113499

2019

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Impact of proton-induced alteration of carrier lifetime on single-event transient in SiGe heterojunction bipolar transistor Project supported by the National Natural Science Foundation of China (Grant Nos. 11775167, 61574171, 11575138, and 11835006)

Chinese physics B, 2019-07, Vol.28 (7)

2019

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Research on SEE mitigation techniques using back junction and p+ buffer layer in domestic non-DTI SiGe HBTs by TCAD Project supported by the National Natural Science Foundation of China (Grant Nos. 11775167, 11575138, and 11835006)

Chinese physics B, 2019-06, Vol.28 (6)

2019

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Investigation of enhanced low dose rate sensitivity in SiGe HBTs by 60Co γ irradiation under different biases

Microelectronics and reliability, 2018-05, Vol.84, p.105-111

2018

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Adsorption and dissociation of H2O on the (001) surface of uranium mononitride: energetics and mechanism from first-principles investigationElectronic supplementary information (ESI) available: Atomistic thermodynamics method; top and side views of the stable configurations (Fig. S1 and S2) and adsorption energies and structure parameters (Table S1) for H, O, and OH adsorption; adsorption energies and structural parameters (Table S2) for H2O adsorption at high coverages; the metastable states fo

2016-05

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Adsorption and dissociation of H sub(2)O on the (001) surface of uranium mononitride: energetics and mechanism from first-principles investigation

Physical chemistry chemical physics : PCCP, 2016-05, Vol.18 (19), p.13255-13266

2016

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Investigation of single event effect in 28-nm system-on-chip with multi patternsProject supported by the National Natural Science Foundation of China (Grant Nos. 11575138, 11835006, 11690040, and 11690043), the Fund from Innovation Center of Radiation Application (Grant No. KFZC2019050321), the Fund from the Science and Technology on Vacuum Technology and Physics Laboratory, Lanzhou Institute of Physics (Grant No. ZWK1804), and the Program of China Scholarships Council (Grant No. 201906280343)

Chinese physics B, 2020-10, Vol.29 (10)

2020

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Adsorption and dissociation of H 2 O on the (001) surface of uranium mononitride: energetics and mechanism from first-principles investigation

Physical chemistry chemical physics : PCCP, 2016, Vol.18 (19), p.13255-13266

2016

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Proton-induced current transient in SiGe HBT and charge collection model based on Monte Carlo simulation

Science China. Technological sciences, 2020-05, Vol.63 (5), p.851-858

2020

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Surface properties of NpO 2 and water reacting with stoichiometric and reduced NpO 2 (111), (110), and (100) surfaces from ab initio atomistic thermodynamics

Surface science, 2016-02, Vol.644, p.153-164

2016

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First-principles study of H 2 adsorption and dissociation on Zr(0 0 0 1)

Journal of nuclear materials, 2011-11, Vol.418 (1), p.159-164

2011

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Heavy Ion and Laser Microbeam Induced Current Transients in SiGe Heterojunction Bipolar Transistor Supported by the National Natural Science Foundation of China under Grant Nos 61274106 and 61574171

Chinese physics letters, 2017-10, Vol.34 (10)

2017

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An investigation of ionizing radiation damage in different SiGe processes Project supported by the National Natural Science Foundation of China (Grant Nos. 61274106 and 61574171)

Chinese physics B, 2017-08, Vol.26 (8)

2017

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