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Arsenic Diffusion Study in HgCdTe for Low p-Type Doping in Auger-Suppressed Photodiodes

Journal of electronic materials, 2010-07, Vol.39 (7), p.945-950

2010

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Molecular Beam Epitaxially Grown HgTe and HgCdTe-on-Silicon for Space-Based X-Ray Calorimetry Applications

Journal of electronic materials, 2010-07, Vol.39 (7), p.1087-1096

2010

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Composition and thickness distribution of HgCdTe molecular beam epitaxy wafers by infrared microscope mapping

Journal of crystal growth, 2005-04, Vol.277 (1), p.78-84

2005

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Characterization of PbSnSe/CdTe/Si (211) Epilayers Grown by Molecular Beam Epitaxy

Journal of electronic materials, 2008-09, Vol.37 (9), p.1200-1204

2008

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MBE HgCdTe for HDVIP Devices: Horizontal Integration in the US HgCdTe FPA Industry

Journal of electronic materials, 2012-10, Vol.41 (10), p.2700-2706

2012

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Absorption of narrow-gap HgCdTe near the band edge including nonparabolicity and the urbach tail

Journal of electronic materials, 2007-08, Vol.36 (8), p.1000-1006

2007

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Thermoelectric Characteristics in MBE-Grown HgCdTe-Based Superlattices

Journal of electronic materials, 2008-09, Vol.37 (9), p.1504-1508

2008

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HgTe/HgCdTe superlattices grown on CdTe/Si by molecular beam epitaxy for infrared detection

Journal of electronic materials, 2004-06, Vol.33 (6), p.503-508

2004

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Near-bandgap infrared absorption properties of HgCdTe

Journal of electronic materials, 2004-06, Vol.33 (6), p.709-713

2004

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p-type HgTe/CdTe superlattices for very-long wavelength infrared detectors

Journal of electronic materials, 2006-06, Vol.35 (6), p.1341-1345

2006

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Modeling of disorder influenced Auger recombination in strained-layer type-II superlattices

Journal of applied physics, 2003-01, Vol.93 (2), p.1075-1078

2003

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Multilayer thermoelectric refrigeration in Hg1−xCdxTe superlattices

Journal of applied physics, 1999-09, Vol.86 (6), p.3195-3198

1999

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Effects of hydrogen on majority carrier transport and minority carrier lifetimes in long-wavelength infrared HgCdTe on Si

Journal of electronic materials, 2006-06, Vol.35 (6), p.1385-1390

2006

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Monolithically integrated HgCdTe focal plane arrays

Journal of electronic materials, 2005-06, Vol.34 (6), p.820-831

2005

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HgCdTe/CdTe/Si infrared photodetectors grown by MBE for near-room temperature operation

Journal of electronic materials, 2001-06, Vol.30 (6), p.711-716

2001

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Finite temperature studies of Te adsorption on Si(0 0 1)

Surface science, 2002-11, Vol.519 (1-2), p.79-89

2002

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Epitaxial growth simulations of CdTe(1 1 1)B on Si(0 0 1)

Journal of crystal growth, 1998-09, Vol.193 (1), p.241-251

1998

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First principles calculations of Si(2 1 1) surface reconstructions

Journal of crystal growth, 1997-09, Vol.180 (1), p.54-60

Grein, C.H.

1997

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Correlation of arsenic incorporation and its electrical activation in MBE HgCdTe

Journal of electronic materials, 2000-06, Vol.29 (6), p.869-872

2000

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Electronic structure and radiative lifetimes of ideal Zn1-xBexSe alloys

Solid state communications, 2002-01, Vol.123 (5), p.209-212

2002

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Auger recombination in narrow-gap semiconductor superlattices incorporating antimony

Journal of applied physics, 2002-12, Vol.92 (12), p.7311-7316

2002

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Temperature dependence of Auger recombination in a multilayer narrow-band-gap superlattice

Physical review. B, Condensed matter, 1998-11, Vol.58 (19), p.13047-13054

1998

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Arsenic activation in molecular beam epitaxy grown, in situ doped HgCdTe(211)

Applied physics letters, 2005-05, Vol.86 (21), p.212106-212106-3

2005

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Molecular beam epitaxy growth of HgCdTe for high performance infrared photon detectors

Infrared physics & technology, 2007-04, Vol.50 (2-3), p.284-290

2007

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Modeling of CdTe(1 1 1)B/Si(0 0 1) interfaces

Journal of crystal growth, 1997-08, Vol.179 (1), p.72-82

1997

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Arsenic Diffusion Study in HgCdTe for Low p-Type Doping in Auger-Suppressed Photodiodes

Molecular Beam Epitaxially Grown HgTe and HgCdTe-on-Silicon for Space-Based X-Ray Calorimetry Applications

Composition and thickness distribution of HgCdTe molecular beam epitaxy wafers by infrared microscope mapping

Characterization of PbSnSe/CdTe/Si (211) Epilayers Grown by Molecular Beam Epitaxy

MBE HgCdTe for HDVIP Devices: Horizontal Integration in the US HgCdTe FPA Industry

Absorption of narrow-gap HgCdTe near the band edge including nonparabolicity and the urbach tail

Thermoelectric Characteristics in MBE-Grown HgCdTe-Based Superlattices

HgTe/HgCdTe superlattices grown on CdTe/Si by molecular beam epitaxy for infrared detection

Near-bandgap infrared absorption properties of HgCdTe

p-type HgTe/CdTe superlattices for very-long wavelength infrared detectors

Modeling of disorder influenced Auger recombination in strained-layer type-II superlattices

Multilayer thermoelectric refrigeration in Hg1−xCdxTe superlattices

Effects of hydrogen on majority carrier transport and minority carrier lifetimes in long-wavelength infrared HgCdTe on Si

Monolithically integrated HgCdTe focal plane arrays

HgCdTe/CdTe/Si infrared photodetectors grown by MBE for near-room temperature operation

Finite temperature studies of Te adsorption on Si(0 0 1)

Epitaxial growth simulations of CdTe(1 1 1)B on Si(0 0 1)

First principles calculations of Si(2 1 1) surface reconstructions

Correlation of arsenic incorporation and its electrical activation in MBE HgCdTe

Electronic structure and radiative lifetimes of ideal Zn1-xBexSe alloys

Auger recombination in narrow-gap semiconductor superlattices incorporating antimony

Temperature dependence of Auger recombination in a multilayer narrow-band-gap superlattice

Arsenic activation in molecular beam epitaxy grown, in situ doped HgCdTe(211)

Molecular beam epitaxy growth of HgCdTe for high performance infrared photon detectors

Modeling of CdTe(1 1 1)B/Si(0 0 1) interfaces

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