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All-active dual-order mode Mach-Zehnder wavelength converter for co-propagative operation

Electronics letters, 1998-09, Vol.34 (19), p.1848

1998

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Polarisation-independent phased-array demultiplexer on InP with high fabrication tolerance

Electronics letters, 1995-08, Vol.31 (16), p.1372-1373, Article 1372

1995

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High temperature (Ga)InAsP/high band gap GaInAsP barriers 1.3 μm SL-MQW lasers grown by gas source MBE

Journal of crystal growth, 1997-05, Vol.175, p.948-954

1997

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All-active dual-order mode (DOMO) Mach-Zehnder wavelength converter for 10 Gbit/s operation

Electronics letters, 1999-10, Vol.35 (21), p.1862-1863

1999

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Increased input power dynamic range of Mach-Zehnder wavelength converter using a semiconductor optical amplifier power equaliser with 8 dBm output saturation power

Electronics letters, 1999-01, Vol.35 (12), p.995-996

1999

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Design and fabrication of 1.31-1.55-μm phased-array duplexer on InP

IEEE journal of selected topics in quantum electronics, 1996-06, Vol.2 (2), p.251-256

1996

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Tunable phased-array wavelength demultiplexer on InP

Electronics letters, 1995-01, Vol.31 (1), p.32-33

1995

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16 channel phased array wavelength demultiplexer on InP with low polarisation sensitivity

Electronics letters, 1994-02, Vol.30 (4), p.336-337

1994

Volltextzugriff (PDF)

Four-channel wavelength selector monolithically integrated on InP

Electronics letters, 1998, Vol.34 (19), p.1841

1998

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Compact high sensitivity 10 Gbit/s SOA-filter-pin receiver module

Electronics letters, 1997-03, Vol.33 (6), p.509-510

1997

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Etching of deep V-groove channels on a (001) InP substrate and regrowth by gas source molecular beam epitaxy

Journal of crystal growth, 1996-10, Vol.167 (3-4), p.446-451

1996

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Electrical and optical characterization of semi-insulating GaxIn1-xAsyP1-y/InP grown by gas source molecular beam epitaxy

Journal of crystal growth, 1993-02, Vol.127 (1-4), p.237-240

1993

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Buried heterostructure laser fabricated using reactive ion etching and gas source molecular beam epitaxy

Applied physics letters, 1992-03, Vol.60 (10), p.1211-1213

1992

Volltextzugriff (PDF)

Quasi-CW Room Temperature Operation of 1.52 µm InGaAsP/AlGaAs Vertical Cavity Lasers Obtained by Localised Fusion

Japanese Journal of Applied Physics, 1998-11, Vol.37 (11R), p.6016

1998

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Growth of semi-insulating InP by GSMBE

Journal of crystal growth, 1992-05, Vol.120 (1), p.317-322

1992

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Optoelectronic devices by gas source molecular beam epitaxy

Journal of crystal growth, 1992-05, Vol.120 (1), p.157-161

1992

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Integrated BRS/ridge transmit receive device fabrication using well established III-V material technology

Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129), 1998, p.273-275

1998

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3.6-MHz linewidth 1.55-[mu]m monomode vertical-cavity surface-emitting laser

IEEE photonics technology letters, 2001-04, Vol.13 (4), p.269

2001

Volltextzugriff (PDF)

0.7 W in singlemode fibre from 1.48 [micro sign]m semiconductor unstable-cavity laser with low-confinement asymmetric epilayer structure

Electronics letters, 2000, Vol.36 (3), p.221

2000

Volltextzugriff (PDF)

Integrated all-active Mach-Zehnder wavelength converter with –10 dBm signal sensitivity and 15 dB dynamic range at 10 Gbit/s

Electronics letters, 1999-04, Vol.35 (7), p.588

1999

Volltextzugriff (PDF)

Demonstration of 20Gbit/s all-optical logic XOR in integrated SOA-based interferometric wavelength converter

Electronics letters, 2000-10, Vol.36 (22), p.1-1

2000

Volltextzugriff (PDF)

All-optical wavelength conversion scheme in SOA-based interferometric devices

Electronics letters, 2000-10, Vol.36 (21), p.1-1

2000

Volltextzugriff (PDF)

Detailed experimental investigation of all-active dual-order mode Mach-Zehnder wavelength converter

Electronics letters, 2000-07, Vol.36 (15), p.1-1

2000

Volltextzugriff (PDF)

3.6-MHz linewidth 1.55-micron monomode vertical-cavity surface-emitting laser

IEEE photonics technology letters, 2001-04, Vol.13 (4), p.269-271

2001

Volltextzugriff (PDF)

3.6-MHz linewidth 1.55-mum monomode vertical-cavity surface-emitting laser

IEEE photonics technology letters, 2001-04, Vol.13 (4), p.269-271

2001

Volltextzugriff (PDF)

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All-active dual-order mode Mach-Zehnder wavelength converter for co-propagative operation

Polarisation-independent phased-array demultiplexer on InP with high fabrication tolerance

High temperature (Ga)InAsP/high band gap GaInAsP barriers 1.3 μm SL-MQW lasers grown by gas source MBE

All-active dual-order mode (DOMO) Mach-Zehnder wavelength converter for 10 Gbit/s operation

Increased input power dynamic range of Mach-Zehnder wavelength converter using a semiconductor optical amplifier power equaliser with 8 dBm output saturation power

Design and fabrication of 1.31-1.55-μm phased-array duplexer on InP

Tunable phased-array wavelength demultiplexer on InP

16 channel phased array wavelength demultiplexer on InP with low polarisation sensitivity

Four-channel wavelength selector monolithically integrated on InP

Compact high sensitivity 10 Gbit/s SOA-filter-pin receiver module

Etching of deep V-groove channels on a (001) InP substrate and regrowth by gas source molecular beam epitaxy

Electrical and optical characterization of semi-insulating GaxIn1-xAsyP1-y/InP grown by gas source molecular beam epitaxy

Buried heterostructure laser fabricated using reactive ion etching and gas source molecular beam epitaxy

Quasi-CW Room Temperature Operation of 1.52 µm InGaAsP/AlGaAs Vertical Cavity Lasers Obtained by Localised Fusion

Growth of semi-insulating InP by GSMBE

Optoelectronic devices by gas source molecular beam epitaxy

Integrated BRS/ridge transmit receive device fabrication using well established III-V material technology

3.6-MHz linewidth 1.55-[mu]m monomode vertical-cavity surface-emitting laser

0.7 W in singlemode fibre from 1.48 [micro sign]m semiconductor unstable-cavity laser with low-confinement asymmetric epilayer structure

Integrated all-active Mach-Zehnder wavelength converter with –10 dBm signal sensitivity and 15 dB dynamic range at 10 Gbit/s

Demonstration of 20Gbit/s all-optical logic XOR in integrated SOA-based interferometric wavelength converter

All-optical wavelength conversion scheme in SOA-based interferometric devices

Detailed experimental investigation of all-active dual-order mode Mach-Zehnder wavelength converter

3.6-MHz linewidth 1.55-micron monomode vertical-cavity surface-emitting laser

3.6-MHz linewidth 1.55-mum monomode vertical-cavity surface-emitting laser

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