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Quenching and Reactivation of Electroluminescence by Charge Trapping and Detrapping in Si-Implanted Silicon Nitride Thin Film

IEEE transactions on electron devices, 2009-12, Vol.56 (12), p.3212-3217

2009

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11 C-Acetate and 18 F-FDG PET/CT for Clinical Staging and Selection of Patients with Hepatocellular Carcinoma for Liver Transplantation on the Basis of Milan Criteria: Surgeon’s Perspective

Journal of Nuclear Medicine, 2013-02, Vol.54 (2), p.192-200

2013

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Influence of Si nanocrystal distributed in the gate oxide on the MOS capacitance

IEEE transactions on electron devices, 2006-04, Vol.53 (4), p.730-736

2006

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Good longterm survival after primary living donor liver transplantation for solitary hepatocellular carcinomas up to 8cm in diameter

HPB (Oxford, England), 2014-08, Vol.16 (8), p.749-757

2014

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Influence of Si-nanocrystal distribution in the oxide on the charging behavior of MOS structures

IEEE transactions on electron devices, 2006-04, Vol.53 (4), p.914-917

2006

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Memory effect of Al-rich AlN films synthesized with rf magnetron sputtering

Applied physics letters, 2005-07, Vol.87 (3), p.033112-033112-3

2005

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Charging-Induced Changes in Reverse Current-Voltage Characteristics of Al/Al-Rich \hbox\hbox/\hbox Diodes

IEEE transactions on electron devices, 2009-09, Vol.56 (9), p.2060-2064

2009

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Charging-Induced Changes in Reverse Current-Voltage Characteristics of Al/Al-Rich [Formula Omitted] Diodes

IEEE transactions on electron devices, 2009-09, Vol.56 (9), p.2060

2009

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Does hepatitis B seroconversion affect survival outcome in patients with hepatitis B related hepatocellular carcinoma?

Translational gastroenterology and hepatology, 2016, Vol.1, p.51-51

2016

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Si ion-induced instability in flatband Voltage of Si/sup +/-implanted gate oxides

IEEE transactions on electron devices, 2006-05, Vol.53 (5), p.1280-1282

2006

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Si ion-induced instability in flatband voltage of Si+-implanted gate oxides

IEEE transactions on electron devices, 2006-05, Vol.53 (5), p.1280-1282

2006

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Effect of medial arch-heel support in inserts on reducing ankle eversion: a biomechanics study

Journal of orthopaedic surgery and research, 2008-02, Vol.3 (1), p.7-7, Article 7

2008

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Interface trap generation by FN injection under dynamic oxide field stress

IEEE transactions on electron devices, 1998-09, Vol.45 (9), p.1920-1926

1998

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The implementation of an error forecasting and compensation system for roundness improvement in taper turning

Computers in industry, 1998-03, Vol.35 (2), p.109-120

1998

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35nm InP HEMT for Millimeter and Sub-Millimeter Wave Applications

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials, 2007, p.59-62

2007

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High Gain G-Band MMIC Amplifiers Based on Sub-50 nm Gate Length InP HEMT

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials, 2007, p.22-23

2007

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Reproducibility of transmission line measurement of bipolar I-V characteristics of MOSFETs

IEEE transactions on instrumentation and measurement, 1999-06, Vol.48 (3), p.721-723

1999

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Reverse I–V characteristics of Au/semi-insulating GaAs(1 0 0)

Solid state communications, 1997-03, Vol.101 (9), p.715-720

1997

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Post-stress interface trap generation induced by oxide-field stress with FN injection

IEEE transactions on electron devices, 1998-09, Vol.45 (9), p.1972-1977

1998

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Leakage current induced drop in E f in pes studies of Schottky barrier formation

Solid state communications, 1994, Vol.89 (9), p.779-781

1994

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Electrically induced room temperature metastability in semi-insulating GaAs

Solid state communications, 1998-11, Vol.108 (12), p.907-911

1998

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Current transport and its effect on the determination of the Schottky-barrier height in a typical system: Gold on silicon

Solid-state electronics, 1993-07, Vol.36 (7), p.949-954

1993

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Fermi level position at metal/semi-insulating-GaAs (1 0 0) interfaces studied by photoelectric techniques

Solid state communications, 1997-06, Vol.102 (12), p.833-836

1997

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Optical transitions in germanium dioxide

Thin solid films, 1996-09, Vol.283 (1), p.230-234

1996

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The application of a microcomputer to the control of an injection moulding machine

Computers in industry, 1988-07, Vol.10 (2), p.123-136

1988

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Quenching and Reactivation of Electroluminescence by Charge Trapping and Detrapping in Si-Implanted Silicon Nitride Thin Film

11 C-Acetate and 18 F-FDG PET/CT for Clinical Staging and Selection of Patients with Hepatocellular Carcinoma for Liver Transplantation on the Basis of Milan Criteria: Surgeon’s Perspective

Influence of Si nanocrystal distributed in the gate oxide on the MOS capacitance

Good longterm survival after primary living donor liver transplantation for solitary hepatocellular carcinomas up to 8cm in diameter

Influence of Si-nanocrystal distribution in the oxide on the charging behavior of MOS structures

Memory effect of Al-rich AlN films synthesized with rf magnetron sputtering

Charging-Induced Changes in Reverse Current-Voltage Characteristics of Al/Al-Rich \hbox\hbox/\hbox Diodes

Charging-Induced Changes in Reverse Current-Voltage Characteristics of Al/Al-Rich [Formula Omitted] Diodes

Does hepatitis B seroconversion affect survival outcome in patients with hepatitis B related hepatocellular carcinoma?

Si ion-induced instability in flatband Voltage of Si/sup +/-implanted gate oxides

Si ion-induced instability in flatband voltage of Si+-implanted gate oxides

Effect of medial arch-heel support in inserts on reducing ankle eversion: a biomechanics study

Interface trap generation by FN injection under dynamic oxide field stress

The implementation of an error forecasting and compensation system for roundness improvement in taper turning

35nm InP HEMT for Millimeter and Sub-Millimeter Wave Applications

High Gain G-Band MMIC Amplifiers Based on Sub-50 nm Gate Length InP HEMT

Reproducibility of transmission line measurement of bipolar I-V characteristics of MOSFETs

Reverse I–V characteristics of Au/semi-insulating GaAs(1 0 0)

Post-stress interface trap generation induced by oxide-field stress with FN injection

Leakage current induced drop in E f in pes studies of Schottky barrier formation

Electrically induced room temperature metastability in semi-insulating GaAs

Current transport and its effect on the determination of the Schottky-barrier height in a typical system: Gold on silicon

Fermi level position at metal/semi-insulating-GaAs (1 0 0) interfaces studied by photoelectric techniques

Optical transitions in germanium dioxide

The application of a microcomputer to the control of an injection moulding machine

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