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Dose-rate effects on the formation of ultra-shallow junctions with low-energy B+ and BF2+ ion implants

Thin solid films, 1997-10, Vol.308-309, p.562-569

1997

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Varying implant dose rate for defect reduction in laser thermal processing

Materials science in semiconductor processing, 2001-08, Vol.4 (4), p.339-343

2001

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RTP requirements to yield uniform and repeatable ultra-shallow junctions with low energy boron and BF2 ion implants

Journal of electronic materials, 1998-12, Vol.27 (12), p.1291-1295

1998

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Depth Profiles of Medium Energy Phosphorus Implants into Silicon

MRS proceedings, 1995, Vol.396, Article 51

1995

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Onset of Extended Defect Formation and Enhanced Diffusion for Ultra-Low Energy Boron Implants

MRS proceedings, 1999, Vol.568, Article 9

1999

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Metals contamination in high and medium current implanters

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1995-03, Vol.96 (1), p.68-74

1995

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Annealing Studies on Low Energy As + and As 2 + Implants

MRS proceedings, 1998, Vol.525, Article 257

1998

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Low energy ion implantation and its characterization and processing

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1993-04, Vol.74 (1), p.160-169

1993

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Rapid Thermal Process Requirements for The Annealing of Ultra-Shallow Junctions

MRS proceedings, 1997, Vol.470, Article 299

1997

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Production worthy repeatability of spike anneals

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on, 2002, p.83-86

2002

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The effect of implant species and doping level on cobalt silicide contact formation on ultra-shallow junctions

1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144), 1999, Vol.1, p.51-54 vol.1

1999

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Dependence of junction depth and sheet resistance on the thermal budget in the low temperature pre-stabilization regime

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on, 2002, p.618-621

2002

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The local structural characterization of the inactive clusters in B, BF2 and BF3 implanted Si wafers using X-ray techniques

Microelectronics, 2005-03, Vol.36 (3-6), p.522-526

2005

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RTP shallow junction formation of low energy boron implants into preamorphized silicon

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1987, Vol.21 (1), p.505-508

1987

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ChemInform Abstract: Boron Ultrashallow Junction Formation in Silicon by Low-Energy Implantation and Rapid Thermal Annealing in Inert and Oxidizing Ambient

ChemInform, 1999-11, Vol.30 (44), p.no-no

1999

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Co-implantation of boron and fluorine in silicon

Extended Abstracts of the Second International Workshop on Junction Technology. IWJT. (IEEE Cat.No.01EX541C), 2001, p.57-61

2001

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Reactive ion beam etching

Dry Etching for Microelectronics, 1985, Vol.4

Powell, R. A

1985

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Control of metal contamination in the Varian Extrion 1000 ion implantation system

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1991-04, Vol.55 (1), p.71-76

1991

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Control of wafer charging on the Varian EXTRION 1000 ion implanter

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1991-04, Vol.55 (1), p.77-81

1991

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Rapid Annealing of Implant Damage Using Thermal Radiation

MRS proceedings, 1981, Vol.7, Article 395

1981

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Session Chairmen

Ion Implantation Technology - 92, 1993

1993

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Editorial

Ion Implantation Technology - 92, 1993

1993

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Ion Implantation Technology - 92

Ion Implantation Technology - 92, 1993

1993

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Committees, sponsors and exhibitors

Ion Implantation Technology - 92, 1993

1993

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Planar channeling effects in a batch process ion implanter

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1987, Vol.21 (1), p.391-395

1987

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Dose-rate effects on the formation of ultra-shallow junctions with low-energy B+ and BF2+ ion implants

Varying implant dose rate for defect reduction in laser thermal processing

RTP requirements to yield uniform and repeatable ultra-shallow junctions with low energy boron and BF2 ion implants

Depth Profiles of Medium Energy Phosphorus Implants into Silicon

Onset of Extended Defect Formation and Enhanced Diffusion for Ultra-Low Energy Boron Implants

Metals contamination in high and medium current implanters

Annealing Studies on Low Energy As + and As 2 + Implants

Low energy ion implantation and its characterization and processing

Rapid Thermal Process Requirements for The Annealing of Ultra-Shallow Junctions

Production worthy repeatability of spike anneals

The effect of implant species and doping level on cobalt silicide contact formation on ultra-shallow junctions

Dependence of junction depth and sheet resistance on the thermal budget in the low temperature pre-stabilization regime

The local structural characterization of the inactive clusters in B, BF2 and BF3 implanted Si wafers using X-ray techniques

RTP shallow junction formation of low energy boron implants into preamorphized silicon

ChemInform Abstract: Boron Ultrashallow Junction Formation in Silicon by Low-Energy Implantation and Rapid Thermal Annealing in Inert and Oxidizing Ambient

Co-implantation of boron and fluorine in silicon

Reactive ion beam etching

Control of metal contamination in the Varian Extrion 1000 ion implantation system

Control of wafer charging on the Varian EXTRION 1000 ion implanter

Rapid Annealing of Implant Damage Using Thermal Radiation

Session Chairmen

Editorial

Ion Implantation Technology - 92

Committees, sponsors and exhibitors

Planar channeling effects in a batch process ion implanter

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