UB Paderborn / Katalog / Suche / in CDI

Surface-morphology evolution and strain relaxation during heteroepitaxial growth of GaN films without low-temperature nucleation layers

Applied physics letters, 2007-04, Vol.90 (15), p.151905-151905-3

2007

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Surface morphology of GaN nanorods grown by catalyst-free hydride vapor phase epitaxy

Applied surface science, 2009-11, Vol.256 (4), p.1078-1081

2009

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Mechanism of preferential nucleation of []-oriented GaN twins on an SiO2-patterned m-plane sapphire substrate

Journal of applied crystallography, 2015-02, Vol.48 (1), p.195-199

2015

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Accelerated surface flattening by alternating Ga flow in hydride vapor phase epitaxy

Journal of crystal growth, 2009-05, Vol.311 (10), p.3025-3028

2009

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Polarity and threading dislocation dependence of the surface morphology of c-GaN films exposed to HCl vapor

Journal of materials chemistry. C, Materials for optical and electronic devices, 2018, Vol.6 (23), p.6264-6269

2018

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Mechanism of preferential nucleation of [\bf 1{\overline 1}0{\overline 3}]-oriented GaN twins on an SiO 2 -patterned m -plane sapphire substrate

Journal of applied crystallography, 2015-02, Vol.48 (1), p.195-199

2015

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Critical thickness of GaN thin films on sapphire (0001)

Applied physics letters, 1996-10, Vol.69 (16), p.2358-2360

1996

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Self-regulated in-plane polarity of [11¯00]-oriented GaN domains coalesced from twins grown on a SiO2-patterned m -plane sapphire substrate

Applied physics letters, 2014-05, Vol.104 (18)

2014

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Transformation of In Grains to InN Nanoshells with In2O3 as an Intermediate State under a N2-NH3 Ambient

Journal of the Korean Physical Society, 2011-01, Vol.58 (1), p.49-52

2011

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Diffusion-enhanced preferential growth of m-oriented GaN micro-domains on directly grown graphene with a large domain size on Ti/SiO2/Si(001)

Materials today communications, 2022-03, Vol.30, p.103113, Article 103113

2022

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The determining factor of a preferred orientation of GaN domains grown on m-plane sapphire substrates

Scientific reports, 2015-11, Vol.5 (1), p.16236-16236, Article 16236

2015

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Catalytic decomposition of SiO2 by Fe and the effect of Cu on the behavior of released Si species

Current Applied Physics, 2016, 16(1), , pp.93-100

2016

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Effect of Refined Nitridation of Sapphire Substrates in Hydride Vapor Phase Epitaxy: Definite Correlation of Structural Characteristics between a Low-Temperature-Grown Buffer Layer and a Subsequent High-Temperature-Grown Layer of GaN

Journal of the Korean Physical Society, 2009, 54(6), , pp.2404-2408

2009

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Spontaneous inversion of in-plane polarity of a-oriented GaN domains laterally overgrown on patterned r-plane sapphire substrates

Journal of applied crystallography, 2013-04, Vol.46 (2), p.443-447

2013

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Correlation between the type of threading dislocations and photoluminescence characteristics at different doping concentrations of Si in GaN films

Journal of applied physics, 2002-11, Vol.92 (10), p.6343-6345

2002

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X-ray diffuse scattering study of vacancy nanoclusters in homoepitaxial Ag(001) films

Physical review. B, Condensed matter and materials physics, 2012-10, Vol.86 (15), Article 155446

2012

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Regularly branched InN nanostructures: zinc-blende nanocore and polytypic transition

Journal of applied crystallography, 2012-06, Vol.45 (3), p.503-506

2012

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Buffer layer strain transfer in AlN/GaN near critical thickness

Journal of applied physics, 1999-04, Vol.85 (8), p.4040-4044

1999

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Formation and photoluminescent properties of embedded ZnO quantum dots in ZnO∕ZnMgO multiple-quantum-well-structured nanorods

Applied physics letters, 2006-09, Vol.89 (11)

2006

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Analysis of Morphological Evolution of Crystalline Domains in Nonequilibrium Shape by Using Minimization of Effective Surface Energy

Crystal growth & design, 2011-09, Vol.11 (9), p.3930-3934

2011

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Microscopic analysis of thermally-driven formation of Cu-Si alloy nanoparticles in a Cu/Si template

Journal of the Korean Physical Society, 2013, 63(11), , pp.2128-2132

2013

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Nanoclustering of vacancies in thin metal films revealed by x-ray diffuse scattering

Applied physics letters, 2007-08, Vol.91 (9), p.093131-093131-3

2007

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Nanostructural analysis of GaN tripods and hexapods grown on c-plane sapphire

Journal of applied crystallography, 2010-12, Vol.43 (6), p.1300-1304

2010

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A crystallographic investigation of GaN nanostructures by reciprocal space mapping in a grazing incidence geometry

Nanotechnology, 2009-05, Vol.20 (21), p.215703-21

2009

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Flow-modulation-assisted Diffusion Enhancement Effect on the Surface Morphology of GaN Films

Journal of the Korean Physical Society, 2010, 57(2), , pp.282-286

2010

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Surface-morphology evolution and strain relaxation during heteroepitaxial growth of GaN films without low-temperature nucleation layers

Surface morphology of GaN nanorods grown by catalyst-free hydride vapor phase epitaxy

Mechanism of preferential nucleation of []-oriented GaN twins on an SiO2-patterned m-plane sapphire substrate

Accelerated surface flattening by alternating Ga flow in hydride vapor phase epitaxy

Polarity and threading dislocation dependence of the surface morphology of c-GaN films exposed to HCl vapor

Mechanism of preferential nucleation of [\bf 1{\overline 1}0{\overline 3}]-oriented GaN twins on an SiO 2 -patterned m -plane sapphire substrate

Critical thickness of GaN thin films on sapphire (0001)

Self-regulated in-plane polarity of [11¯00]-oriented GaN domains coalesced from twins grown on a SiO2-patterned m -plane sapphire substrate

Transformation of In Grains to InN Nanoshells with In2O3 as an Intermediate State under a N2-NH3 Ambient

Diffusion-enhanced preferential growth of m-oriented GaN micro-domains on directly grown graphene with a large domain size on Ti/SiO2/Si(001)

The determining factor of a preferred orientation of GaN domains grown on m-plane sapphire substrates

Catalytic decomposition of SiO2 by Fe and the effect of Cu on the behavior of released Si species

Effect of Refined Nitridation of Sapphire Substrates in Hydride Vapor Phase Epitaxy: Definite Correlation of Structural Characteristics between a Low-Temperature-Grown Buffer Layer and a Subsequent High-Temperature-Grown Layer of GaN

Spontaneous inversion of in-plane polarity of a-oriented GaN domains laterally overgrown on patterned r-plane sapphire substrates

Correlation between the type of threading dislocations and photoluminescence characteristics at different doping concentrations of Si in GaN films

X-ray diffuse scattering study of vacancy nanoclusters in homoepitaxial Ag(001) films

Regularly branched InN nanostructures: zinc-blende nanocore and polytypic transition

Buffer layer strain transfer in AlN/GaN near critical thickness

Formation and photoluminescent properties of embedded ZnO quantum dots in ZnO∕ZnMgO multiple-quantum-well-structured nanorods

Analysis of Morphological Evolution of Crystalline Domains in Nonequilibrium Shape by Using Minimization of Effective Surface Energy

Microscopic analysis of thermally-driven formation of Cu-Si alloy nanoparticles in a Cu/Si template

Nanoclustering of vacancies in thin metal films revealed by x-ray diffuse scattering

Nanostructural analysis of GaN tripods and hexapods grown on c-plane sapphire

A crystallographic investigation of GaN nanostructures by reciprocal space mapping in a grazing incidence geometry

Flow-modulation-assisted Diffusion Enhancement Effect on the Surface Morphology of GaN Films

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