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Giant piezoresistance effect in p-type silicon

2010 International Conference on Simulation of Semiconductor Processes and Devices, 2010, p.321-324

2010

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Dietary Curcumin Promotes Resilience to Chronic Social Defeat Stress in a Highly Susceptible Mouse Strain

Aubry, Antonio V

2018

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UHV-CVD heteroepitaxial growth of Si1−xGex alloys on Si(100) using silane and germane

Thin solid films, 1997-02, Vol.294 (1-2), p.59-63

1997

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Monte Carlo simulation of double gate MOSFET including multi sub-band description

Journal of computational electronics, 2006-12, Vol.5 (4), p.439-442

2006

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Annealing of thin Zr films on Si1-xGex(0 ≤ x ≤ 1): X-ray diffraction and Raman studies

The Journal of physics and chemistry of solids, 2002-10, Vol.63 (10), p.1889-1900

2002

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Schottky-barrier height inhomogeneities controlled by buried Ge/Si quantum dots

Microelectronic engineering, 2002-10, Vol.64 (1), p.435-441

2002

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SYNERGISTIC EFFECT OF ICOS/B7RP-1 AND CD40/CD40L COSTIMULATION BLOCKADE IN THE INDUCTION OF ALLOGENEIC TOLERANCE

Transplantation, 2004-07, Vol.78, p.181-182

2004

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Influence of Ballistic Effects in Ultra-Small MOSFETs

Journal of computational electronics, 2004-10, Vol.3 (3-4), p.207-210

2004

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Quantitative Determination of Potent Flavor Compounds in Burgundy Pinot Noir Wines Using a Stable Isotope Dilution Assay

Journal of agricultural and food chemistry, 1997-06, Vol.45 (6), p.2120-2123

1997

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Device performance and optimization of decananometer long double gate MOSFET by Monte Carlo simulation

Solid-state electronics, 2007-04, Vol.51 (4), p.543-550

2007

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MONTE CARLO SIMULATION OF GIANT PIEZORESISTANCE EFFECT IN p-TYPE SILICON NANOSTRUCTURES

Modern physics letters. B, Condensed matter physics, statistical physics, applied physics, 2011-05, Vol.25 (12n13), p.995-1001

2011

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An Application-Driven Improvement of the DriftaDiffusion Model for Carrier Transport in Decanano-Scaled CMOS Devices

IEEE transactions on electron devices, 2008-01, Vol.55 (11)

2008

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Comparison of wine discrimination with orthonasal and retronasal profilings. Application to Burgundy Pinot Noir wines

Food quality and preference, 1999, Vol.10 (4), p.253-259

1999

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SENSORY ANALYSIS OF BURGUNDY PINOT NOIR WINES: A COMPARISON OF ORTHONASAL AND RETRONASAL PROFILING

Journal of sensory studies, 1999-03, Vol.14 (1), p.97-117

1999

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Schottky barrier heights on IV-IV compound semiconductors

Journal of electronic materials, 1996-11, Vol.25 (11), p.1748-1753

1996

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Band offset predictions for strained group IV alloys: Si1-x-yGexCy on Si(001) and Si1-xGex on Si1-zGez(001)

Semiconductor science and technology, 2000-06, Vol.15 (6), p.565-572

2000

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Fermi-level pinning in Schottky diodes on IV–IV semiconductors: effect of Ge and C incorporation

Thin solid films, 1997-02, Vol.294 (1), p.141-144

1997

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Preliminary report

Metabolism, clinical and experimental, 2000-10, Vol.49 (10), p.1243-1246

2000

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Electron effective mobility in strained-Si/Si 1− x Ge x MOS devices using Monte Carlo simulation

Solid-state electronics, 2005, Vol.49 (8), p.1320-1329

2005

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Electron effective mobility in strained Si/Si1-xGex MOS devices using Monte Carlo simulation

Solid-state electronics, 2005, Vol.48 (8), p.1320-1329

2005

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Comparison of wine discrimination with orthonasal and retronasal profilings. Application to Burgundy Pinot Noir wines

Food quality and preference, 1999 (10), p.253-259

1999

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Quantitative determination of potent flavor compounds in Burgundy Pinot noir wines using a stable isotope dilution assay

Journal of agricultural and food chemistry, 1997 (45), p.2120-2123

1997

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Structural properties and stability of Zr and Ti germanosilicides formed by rapid thermal annealing

Journal of applied physics, 2002-04, Vol.91 (8), p.5468-5473

2002

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Rapid thermal annealing of Zr/SiGeC contacts

Materials science in semiconductor processing, 1998, Vol.1 (3), p.263-266

1998

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A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs: Papers Selected from the Ultimate Integration on Silicon Conference 2009, ULIS 2009

Solid-state electronics, 2009, Vol.53 (12), p.1293-1302

2009

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Giant piezoresistance effect in p-type silicon

Dietary Curcumin Promotes Resilience to Chronic Social Defeat Stress in a Highly Susceptible Mouse Strain

UHV-CVD heteroepitaxial growth of Si1−xGex alloys on Si(100) using silane and germane

Monte Carlo simulation of double gate MOSFET including multi sub-band description

Annealing of thin Zr films on Si1-xGex(0 ≤ x ≤ 1): X-ray diffraction and Raman studies

Schottky-barrier height inhomogeneities controlled by buried Ge/Si quantum dots

SYNERGISTIC EFFECT OF ICOS/B7RP-1 AND CD40/CD40L COSTIMULATION BLOCKADE IN THE INDUCTION OF ALLOGENEIC TOLERANCE

Influence of Ballistic Effects in Ultra-Small MOSFETs

Quantitative Determination of Potent Flavor Compounds in Burgundy Pinot Noir Wines Using a Stable Isotope Dilution Assay

Device performance and optimization of decananometer long double gate MOSFET by Monte Carlo simulation

MONTE CARLO SIMULATION OF GIANT PIEZORESISTANCE EFFECT IN p-TYPE SILICON NANOSTRUCTURES

An Application-Driven Improvement of the DriftaDiffusion Model for Carrier Transport in Decanano-Scaled CMOS Devices

Comparison of wine discrimination with orthonasal and retronasal profilings. Application to Burgundy Pinot Noir wines

SENSORY ANALYSIS OF BURGUNDY PINOT NOIR WINES: A COMPARISON OF ORTHONASAL AND RETRONASAL PROFILING

Schottky barrier heights on IV-IV compound semiconductors

Band offset predictions for strained group IV alloys: Si1-x-yGexCy on Si(001) and Si1-xGex on Si1-zGez(001)

Fermi-level pinning in Schottky diodes on IV–IV semiconductors: effect of Ge and C incorporation

Preliminary report

Electron effective mobility in strained-Si/Si 1− x Ge x MOS devices using Monte Carlo simulation

Electron effective mobility in strained Si/Si1-xGex MOS devices using Monte Carlo simulation

Comparison of wine discrimination with orthonasal and retronasal profilings. Application to Burgundy Pinot Noir wines

Quantitative determination of potent flavor compounds in Burgundy Pinot noir wines using a stable isotope dilution assay

Structural properties and stability of Zr and Ti germanosilicides formed by rapid thermal annealing

Rapid thermal annealing of Zr/SiGeC contacts

A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs: Papers Selected from the Ultimate Integration on Silicon Conference 2009, ULIS 2009

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