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Optimization of the Photo‐Electrochemical Performance of Mo‐Doped BiVO4 Photoanode by Controlling the Metal–Oxygen Bond State on (020) Facet

Advanced materials interfaces, 2017-05, Vol.4 (10), p.n/a

2017

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Enhanced pH Sensitivity of AlGaN/GaN Ion-Sensitive Field-Effect Transistor by Recess Process and Ammonium Hydroxide Treatment

IEEE transactions on electron devices, 2021-03, Vol.68 (3), p.1250-1254

2021

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Enhanced UV Emission from ZnO on Silver Nanoparticle Arrays by the Surface Plasmon Resonance Effect

Nanoscale research letters, 2021-01, Vol.16 (1), p.8-7, Article 8

2021

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Terahertz monolithic integrated waveguide transmission lines based on wide bandgap semiconductor materials

Journal of applied physics, 2019-04, Vol.125 (15)

2019

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Single-sites Rh-phosphide modified carbon nitride photocatalyst for boosting hydrogen evolution under visible light

Applied catalysis. B, Environmental, 2020-10, Vol.274, p.119117, Article 119117

2020

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Effect of oxygen plasma treatment on the performance of AlGaN/GaN ion-sensitive field-effect transistors

Diamond and related materials, 2017-03, Vol.73, p.1-6

2017

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Fabrication of ultra-sensitive photoelectrochemical aptamer biosensor: Based on semiconductor/DNA interfacial multifunctional reconciliation via 2D-C3N4

Biosensors & bioelectronics, 2020-02, Vol.150, p.111903-111903, Article 111903

2020

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Graphene quantum dot modified g-C3N4 for enhanced photocatalytic oxidation of ammonia performance

RSC advances, 2017-01, Vol.7 (81), p.51687-51694

2017

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Effect of anode area on the sensing mechanism of vertical GaN Schottky barrier diode temperature sensor

Chinese physics B, 2022-03, Vol.31 (4), p.47701-764

2022

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Large‐Scale Transparent Molybdenum Disulfide Plasmonic Photodetector Using Split Bull Eye Structure

Advanced optical materials, 2018-10, Vol.6 (20), p.n/a

2018

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Normally-off AlGaN/GaN heterojunction field-effect transistors with in-situ AlN gate insulator

Chinese physics B, 2022-11, Vol.31 (12), p.127701-594

2022

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Development of functionalized CoOx-NiFe LDH bi-layers to improve the photoelectrochemical water oxidation property of n-Si photoanode

Journal of alloys and compounds, 2023-05, Vol.942, p.168948, Article 168948

2023

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Thermally stable TiN Schottky contact on AlGaN/GaN heterostructure

Vacuum, 2013-01, Vol.87, p.150-154

2013

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Normally-Off Metal-Insulator-Semiconductor P-GaN gated AlGaN/GaN high electron mobility transistors with low gate leakage current

Journal of crystal growth, 2023-06, Vol.611, p.127183, Article 127183

2023

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Characterization of GaN MOSFETs on AlGaN/GaN Heterostructure With Variation in Channel Dimensions

IEEE transactions on electron devices, 2014-02, Vol.61 (2), p.498-504

2014

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AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer

AIP advances, 2017-09, Vol.7 (9), p.095305-095305-7

2017

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Mechanism on BiVO4 photoanode photoelectrochemical performance improving: Based on surface electrochemical reduction method

Electrochimica acta, 2021-01, Vol.366, p.137288, Article 137288

2021

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Synthesis of titanium nitride for self-aligned gate AlGaN/GaN heterostructure field-effect transistors

Nanoscale research letters, 2014-10, Vol.9 (1), p.590-590, Article 590

2014

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Electrical properties of TiN on gallium nitride grown using different deposition conditions and annealing

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2014-03, Vol.32 (2), p.2

2014

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Application of p-type NiO deposited by magnetron reactive sputtering on GaN vertical diodes

Materials science in semiconductor processing, 2021-04, Vol.125, p.105628, Article 105628

2021

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GaN Schottky Barrier Diode With TiN Electrode for Microwave Rectification

IEEE journal of the Electron Devices Society, 2014-11, Vol.2 (6), p.168-173

2014

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Physical-Based Simulation of the GaN-Based Grooved-Anode Planar Gunn Diode

Micromachines (Basel), 2020-01, Vol.11 (1), p.97

2020

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The enhancement of the output characteristics in the GaN based multiple-channel planar Gunn diode

Physica status solidi. A, Applications and materials science, 2016-05, Vol.213 (5), p.1252-1258

2016

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Study on Self-Parallel GaN-Based Terahertz Hetero-Structural Gunn Diode

Applied sciences, 2020-09, Vol.10 (17), p.5777

2020

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Ultrahigh-temperature oxidation of 4H-SiC (0 0 0 1) and gate oxide reliability dependence on oxidation temperature

Journal of crystal growth, 2020-01, Vol.530, p.125250, Article 125250

2020

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Optimization of the Photo‐Electrochemical Performance of Mo‐Doped BiVO4 Photoanode by Controlling the Metal–Oxygen Bond State on (020) Facet

Enhanced pH Sensitivity of AlGaN/GaN Ion-Sensitive Field-Effect Transistor by Recess Process and Ammonium Hydroxide Treatment

Enhanced UV Emission from ZnO on Silver Nanoparticle Arrays by the Surface Plasmon Resonance Effect

Terahertz monolithic integrated waveguide transmission lines based on wide bandgap semiconductor materials

Single-sites Rh-phosphide modified carbon nitride photocatalyst for boosting hydrogen evolution under visible light

Effect of oxygen plasma treatment on the performance of AlGaN/GaN ion-sensitive field-effect transistors

Fabrication of ultra-sensitive photoelectrochemical aptamer biosensor: Based on semiconductor/DNA interfacial multifunctional reconciliation via 2D-C3N4

Graphene quantum dot modified g-C3N4 for enhanced photocatalytic oxidation of ammonia performance

Effect of anode area on the sensing mechanism of vertical GaN Schottky barrier diode temperature sensor

Large‐Scale Transparent Molybdenum Disulfide Plasmonic Photodetector Using Split Bull Eye Structure

Normally-off AlGaN/GaN heterojunction field-effect transistors with in-situ AlN gate insulator

Development of functionalized CoOx-NiFe LDH bi-layers to improve the photoelectrochemical water oxidation property of n-Si photoanode

Thermally stable TiN Schottky contact on AlGaN/GaN heterostructure

Normally-Off Metal-Insulator-Semiconductor P-GaN gated AlGaN/GaN high electron mobility transistors with low gate leakage current

Characterization of GaN MOSFETs on AlGaN/GaN Heterostructure With Variation in Channel Dimensions

AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer

Mechanism on BiVO4 photoanode photoelectrochemical performance improving: Based on surface electrochemical reduction method

Synthesis of titanium nitride for self-aligned gate AlGaN/GaN heterostructure field-effect transistors

Electrical properties of TiN on gallium nitride grown using different deposition conditions and annealing

Application of p-type NiO deposited by magnetron reactive sputtering on GaN vertical diodes

GaN Schottky Barrier Diode With TiN Electrode for Microwave Rectification

Physical-Based Simulation of the GaN-Based Grooved-Anode Planar Gunn Diode

The enhancement of the output characteristics in the GaN based multiple-channel planar Gunn diode

Study on Self-Parallel GaN-Based Terahertz Hetero-Structural Gunn Diode

Ultrahigh-temperature oxidation of 4H-SiC (0 0 0 1) and gate oxide reliability dependence on oxidation temperature

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