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Enhanced stability of complementary resistance switching in the TiN/HfOx/TiN resistive random access memory device via interface engineering

Applied physics letters, 2016-02, Vol.108 (8)

2016

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Impact of Voltage-Accelerated Stress on Hole Trapping at Operating Condition

IEEE electron device letters, 2016-05, Vol.37 (5), p.644-647

2016

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Evidence for two distinct positive trapped charge components in NBTI stressed p-MOSFETs employing ultrathin CVD silicon nitride gate dielectric

IEEE electron device letters, 2004-09, Vol.25 (9), p.637-639

2004

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Effect of Hole-Trap Distribution on the Power-Law Time Exponent of NBTI

IEEE electron device letters, 2009-07, Vol.30 (7), p.751-753

2009

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The electrocardiogram is an unreliable method of identifying left ventricular hypertrophy in stable, treated angina patients

Journal of human hypertension, 2008-06, Vol.22 (6), p.394-400

2008

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Gate-Oxide Trapping Enabled Synaptic Logic Transistor

2020 IEEE International Reliability Physics Symposium (IRPS), 2020, p.1-6

2020

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Non-classical hot-electron mechanism and its implications on the reliability and scalability of the high- κ dielectric N-MOS Flash memory cell

Microelectronic engineering, 2007-09, Vol.84 (9), p.1929-1933

2007

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Observation of Self-Reset During Forming of the TiN/HfOx/TiN Resistive Switching Device

IEEE electron device letters, 2016-09, Vol.37 (9), p.1116-1119

2016

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Role of Nitrogen on the Gate Length Dependence of NBTI

IEEE electron device letters, 2009-07, Vol.30 (7), p.772-774

2009

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New Observations on the Correlation Between Hole-Trapping Transformation and SILC Generation Under NBTI Stressing

IEEE electron device letters, 2016-04, Vol.37 (4), p.369-372

2016

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Investigation of Surface Band Bending of Ga-Face GaN by Angle-Resolved X-ray Photoelectron Spectroscopy

ECS journal of solid state science and technology, 2016, Vol.5 (9), p.P514-P517

2016

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Self-Heating-Induced Spatial Spread of Interface State Generation by Hot-Electron Effect: Role of the High-Energy Tail Electron

IEEE electron device letters, 2008-08, Vol.29 (8), p.934-937

2008

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Breakdowns in high-k gate stacks of nano-scale CMOS devices

Microelectronic engineering, 2005-06, Vol.80, p.353-361

2005

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Electron Trap Transformation Under Positive-Bias Temperature Stressing

IEEE electron device letters, 2013-03, Vol.34 (3), p.351-353

2013

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Study of the Multistep-Deposited and UV-Ozone-Annealed HfZrO Gate Stack by Scanning Tunneling Microscopy and Pulse C- V Measurement

IEEE transactions on electron devices, 2012-08, Vol.59 (8), p.2268-2272

2012

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Percolation resistance evolution during progressive breakdown in narrow MOSFETs

IEEE electron device letters, 2006-05, Vol.27 (5), p.396-398

2006

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Evidence for a composite interface State generation mode in the CHE-stressed deep-submicrometer n-MOSFET

IEEE transactions on electron devices, 2004-12, Vol.51 (12), p.2246-2248

2004

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A New Method for Enhancing High- k/Metal-Gate Stack Performance and Reliability for High- k Last Integration

IEEE electron device letters, 2013-02, Vol.34 (2), p.295-297

2013

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A new insight into the degradation behavior of the LDD N-MOSFET during dynamic hot-carrier stressing

IEEE electron device letters, 2001-11, Vol.22 (11), p.553-555

Ang, D.S.

2001

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Generation-recombination noise in the near fully depleted SIMOX SOI n-MOSFET - physical characteristics and modeling

IEEE transactions on electron devices, 2003-12, Vol.50 (12), p.2490-2498

2003

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On the dynamic NBTI of the HfO2 and HfSiON P-MOSFET

Microelectronic engineering, 2011-07, Vol.88 (7), p.1392-1395

2011

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A unified model for the self-limiting hot-carrier degradation in LDD n-MOSFETs

IEEE transactions on electron devices, 1998-01, Vol.45 (1), p.149-159

1998

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High-energy tail electrons as the mechanism for the worst-case hot-carrier stress degradation of the deep submicrometer N-MOSFET

IEEE electron device letters, 2003-07, Vol.24 (7), p.469-471

2003

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A novel subthreshold slope technique for the extraction of the buried-oxide interface trap density in the fully depleted SOI MOSFET

IEEE electron device letters, 2000-08, Vol.21 (8), p.411-413

2000

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A reassessment of ac hot-carrier degradation in deep-submicrometer LDD N-MOSFET

IEEE electron device letters, 2003-09, Vol.24 (9), p.598-600

2003

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Enhanced stability of complementary resistance switching in the TiN/HfOx/TiN resistive random access memory device via interface engineering

Impact of Voltage-Accelerated Stress on Hole Trapping at Operating Condition

Evidence for two distinct positive trapped charge components in NBTI stressed p-MOSFETs employing ultrathin CVD silicon nitride gate dielectric

Effect of Hole-Trap Distribution on the Power-Law Time Exponent of NBTI

The electrocardiogram is an unreliable method of identifying left ventricular hypertrophy in stable, treated angina patients

Gate-Oxide Trapping Enabled Synaptic Logic Transistor

Non-classical hot-electron mechanism and its implications on the reliability and scalability of the high- κ dielectric N-MOS Flash memory cell

Observation of Self-Reset During Forming of the TiN/HfOx/TiN Resistive Switching Device

Role of Nitrogen on the Gate Length Dependence of NBTI

New Observations on the Correlation Between Hole-Trapping Transformation and SILC Generation Under NBTI Stressing

Investigation of Surface Band Bending of Ga-Face GaN by Angle-Resolved X-ray Photoelectron Spectroscopy

Self-Heating-Induced Spatial Spread of Interface State Generation by Hot-Electron Effect: Role of the High-Energy Tail Electron

Breakdowns in high-k gate stacks of nano-scale CMOS devices

Electron Trap Transformation Under Positive-Bias Temperature Stressing

Study of the Multistep-Deposited and UV-Ozone-Annealed HfZrO Gate Stack by Scanning Tunneling Microscopy and Pulse C- V Measurement

Percolation resistance evolution during progressive breakdown in narrow MOSFETs

Evidence for a composite interface State generation mode in the CHE-stressed deep-submicrometer n-MOSFET

A New Method for Enhancing High- k/Metal-Gate Stack Performance and Reliability for High- k Last Integration

A new insight into the degradation behavior of the LDD N-MOSFET during dynamic hot-carrier stressing

Generation-recombination noise in the near fully depleted SIMOX SOI n-MOSFET - physical characteristics and modeling

On the dynamic NBTI of the HfO2 and HfSiON P-MOSFET

A unified model for the self-limiting hot-carrier degradation in LDD n-MOSFETs

High-energy tail electrons as the mechanism for the worst-case hot-carrier stress degradation of the deep submicrometer N-MOSFET

A novel subthreshold slope technique for the extraction of the buried-oxide interface trap density in the fully depleted SOI MOSFET

A reassessment of ac hot-carrier degradation in deep-submicrometer LDD N-MOSFET

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