UB Paderborn / Katalog / Suche / in CDI

Observation of suppressed interface state relaxation under positive gate biasing of the ultrathin oxynitride gate p-MOSFET subjected to negative-bias temperature stressing

IEEE electron device letters, 2006-05, Vol.27 (5), p.412-415

Ang, D.S.

2006

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Ultrafast Measurement on NBTI

IEEE electron device letters, 2009-03, Vol.30 (3), p.275-277

2009

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Evidence for two distinct positive trapped charge components in NBTI stressed p-MOSFETs employing ultrathin CVD silicon nitride gate dielectric

IEEE electron device letters, 2004-09, Vol.25 (9), p.637-639

2004

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Self-Heating-Induced Spatial Spread of Interface State Generation by Hot-Electron Effect: Role of the High-Energy Tail Electron

IEEE electron device letters, 2008-08, Vol.29 (8), p.934-937

2008

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High-energy tail electrons as the mechanism for the worst-case hot-carrier stress degradation of the deep submicrometer N-MOSFET

IEEE electron device letters, 2003-07, Vol.24 (7), p.469-471

2003

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A novel subthreshold slope technique for the extraction of the buried-oxide interface trap density in the fully depleted SOI MOSFET

IEEE electron device letters, 2000-08, Vol.21 (8), p.411-413

2000

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Percolation resistance evolution during progressive breakdown in narrow MOSFETs

IEEE electron device letters, 2006-05, Vol.27 (5), p.396-398

2006

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A reassessment of ac hot-carrier degradation in deep-submicrometer LDD N-MOSFET

IEEE electron device letters, 2003-09, Vol.24 (9), p.598-600

2003

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Generation-recombination noise in the near fully depleted SIMOX N-MOSFET operating in the linear region

IEEE electron device letters, 2001-11, Vol.22 (11), p.545-547

2001

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The role of electron traps on the post-stress interface trap generation in hot-carrier stressed p-MOSFETs

IEEE transactions on electron devices, 1999-04, Vol.46 (4), p.738-746

1999

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A unified model for the self-limiting hot-carrier degradation in LDD n-MOSFETs

IEEE transactions on electron devices, 1998-01, Vol.45 (1), p.149-159

1998

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A Critical Gate Voltage Triggering Irreversible Gate Dielectric Degradation

2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual, 2007, p.576-577

2007

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Physical framework for NBTI: Insight from ultra-fast switching measurement of NBTI recovery

2008 IEEE International Reliability Physics Symposium, 2008, p.735-736

2008

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Effects of Nano-scale Schottky Barrier of Conductor-like Breakdown Path on Progressive Breakdown in MOSFET

2006 IEEE International Reliability Physics Symposium Proceedings, 2006, p.619-620

2006

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Significance of Breakdown Location on Post-Breakdown Transient and MOSFET Degradation

2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual, 2007, p.221-225

2007

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On the dominant interface trap generation process during hot-carrier stressing [MOSFETs]

2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167), 2001, p.412-418

2001

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Hot-electron degradation in NMOSFET's: results from temperature anneal

IEEE transactions on electron devices, 1994-07, Vol.41 (7), p.1303-1305

1994

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Mechanism of Bias-Temperature Instability: Results from Positive Gate Stress

2007 14th International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2007, p.96-99

2007

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Non-Classical Hot-Electron Gate Current in the Deep Submicrometer N-MOS Flash Memory Cell

2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2006, p.75-79

2006

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Substrate injection induced ultrafast degradation in HfO2/TaN/TiN gate stack MOSFET

2006 International Electron Devices Meeting, 2006, p.1-4

2006

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New insight into gate dielectric breakdown induced MOSFET degradation by novel percolation path resistance measurements

IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004, 2004, p.717-720

2004

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Study of dielectric-breakdown-induced dopant redistribution based on MOSFET diode I-V measurement

Proceedings of the 12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005, 2005, p.131-136

2005

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Observation of suppressed interface state relaxation under positive gate biasing of the ultrathin oxynitride gate p-MOSFET subjected to negative-bias temperature stressing

Ultrafast Measurement on NBTI

Evidence for two distinct positive trapped charge components in NBTI stressed p-MOSFETs employing ultrathin CVD silicon nitride gate dielectric

Self-Heating-Induced Spatial Spread of Interface State Generation by Hot-Electron Effect: Role of the High-Energy Tail Electron

High-energy tail electrons as the mechanism for the worst-case hot-carrier stress degradation of the deep submicrometer N-MOSFET

A novel subthreshold slope technique for the extraction of the buried-oxide interface trap density in the fully depleted SOI MOSFET

Percolation resistance evolution during progressive breakdown in narrow MOSFETs

A reassessment of ac hot-carrier degradation in deep-submicrometer LDD N-MOSFET

Generation-recombination noise in the near fully depleted SIMOX N-MOSFET operating in the linear region

The role of electron traps on the post-stress interface trap generation in hot-carrier stressed p-MOSFETs

A unified model for the self-limiting hot-carrier degradation in LDD n-MOSFETs

A Critical Gate Voltage Triggering Irreversible Gate Dielectric Degradation

Physical framework for NBTI: Insight from ultra-fast switching measurement of NBTI recovery

Effects of Nano-scale Schottky Barrier of Conductor-like Breakdown Path on Progressive Breakdown in MOSFET

Significance of Breakdown Location on Post-Breakdown Transient and MOSFET Degradation

On the dominant interface trap generation process during hot-carrier stressing [MOSFETs]

Hot-electron degradation in NMOSFET's: results from temperature anneal

Mechanism of Bias-Temperature Instability: Results from Positive Gate Stress

Non-Classical Hot-Electron Gate Current in the Deep Submicrometer N-MOS Flash Memory Cell

Substrate injection induced ultrafast degradation in HfO2/TaN/TiN gate stack MOSFET

New insight into gate dielectric breakdown induced MOSFET degradation by novel percolation path resistance measurements

Study of dielectric-breakdown-induced dopant redistribution based on MOSFET diode I-V measurement

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