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A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors

Scientific reports, 2021-11, Vol.11 (1), p.22401-22401, Article 22401

2021

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300-GHz-Band 120-Gb/s Wireless Front-End Based on InP-HEMT PAs and Mixers

IEEE journal of solid-state circuits, 2020-09, Vol.55 (9), p.1-1

2020

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InGaP/GaAsSb/InGaAsSb/InP Double Heterojunction Bipolar Transistors With Record f t of 813 GHz

IEEE electron device letters, 2020-05, Vol.41 (5), p.697-700

2020

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Feasibility Study of Wafer-Level Backside Process for InP-Based ICs

IEEE transactions on electron devices, 2019-09, Vol.66 (9), p.3771-3776

2019

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Reliability Instability Assessment with Interfacial Trapping Analysis for the Optimization of Al Composition in AlxGa1−xN/GaN High Electron Mobility Transistors

Physica status solidi. A, Applications and materials science, 2024-07, Vol.221 (13), p.n/a

2024

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Performance Enhancement of AlGaN/GaN HEMT via Trap-State Improvement Using O2 Plasma Treatment

IEEE transactions on electron devices, 2023-06, Vol.70 (6), p.2988-2993

2023

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Analytical and Physical Investigation on Source Resistance in InxGa1−xAs Quantum-Well High-Electron-Mobility Transistors

Micromachines (Basel), 2023-02, Vol.14 (2), p.439

2023

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Theoretical and experimental analysis of the source resistance components in In0.7Ga0.3As quantum-well high-electron-mobility transistors

Journal of the Korean Physical Society, 2021, 78(6), , pp.516-522

2021

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Sub-50 nm Terahertz In0.8Ga0.2As Quantum-Well High-Electron-Mobility Transistors for 6G Applications

IEEE transactions on electron devices, 2023-04, Vol.70 (4), p.2081

2023

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Sub-30-nm In0.8Ga0.2As Composite-Channel High-Electron-Mobility Transistors With Record High-Frequency Characteristics

IEEE transactions on electron devices, 2021-04, Vol.68 (4), p.2010-2016

2021

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Analytical and Physical Investigation on Source Resistance in InIx/IGaI1−x/IAs Quantum-Well High-Electron-Mobility Transistors

Micromachines (Basel), 2023-02, Vol.14 (2)

2023

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Impact of strained GaAs spacer between InP emitter and GaAs1−ySby base on structural properties and electrical characteristics of MOCVD-grown InP/GaAs1−ySby/InP DHBTs

Journal of crystal growth, 2014-06, Vol.395, p.31-37

2014

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Impact of the Source-to-Drain Spacing on the DC and RF Characteristics of InGaAs/InAlAs High-Electron Mobility Transistors

IEEE electron device letters, 2018-12, Vol.39 (12), p.1844-1847

2018

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A Comprehensive Benchmarking Method for the Net Combination of Mobility Enhancement and Density-of-States Bottleneck

IEEE electron device letters, 2021-06, Vol.42 (6), p.804-807

2021

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[Formula Omitted]nm InAlAs/InGaAs High-Electron- Mobility Transistors With a g m_max of 3 S/mm and [Formula Omitted] of 559 GHz

IEEE electron device letters, 2018-01, Vol.39 (11), p.1640

2018

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Composition and doping control for metal-organic chemical vapor deposition of InP-based double heterojunction bipolar transistor with hybrid base structure consisting of GaAsSb contact and InGaAsSb graded layers

Japanese Journal of Applied Physics, 2017-07, Vol.56 (7), p.075503

2017

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MOCVD-grown compressively strained C-doped InxGa1−xAs1−ySby with high-In/Sb content for very low turn-on-voltage InP-based DHBTs

Journal of crystal growth, 2014-10, Vol.404, p.172-176

2014

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Physics-Based Analytical Channel Charge Model of In x Ga1- x As/In0.52Al0.48As Quantum-Well Field-Effect Transistors From Subthreshold to Strong Inversion Regimes

IEEE journal of the Electron Devices Society, 2022-01, Vol.10, p.387

2022

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InGaP/GaAsSb/InGaAsSb double heterojunction bipolar transistors with 703-GHz fmax and 5.4-V breakdown voltage

IEICE Electronics Express, 2019, Vol.16 (3), p.20181125-20181125

2019

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On the universality of drain-induced-barrier-lowering in field-effect transistors

2022 International Electron Devices Meeting (IEDM), 2022, p.8.3.1-8.3.4

2022

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text\text\text quantum-well high-electron-mobility transistors with a record combination of \mathrm} and \mathrm: From the mobility relevant to ballistic transport regimes

2021 IEEE International Electron Devices Meeting (IEDM), 2021, p.11.3.1-11.3.4

2021

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A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors

300-GHz-Band 120-Gb/s Wireless Front-End Based on InP-HEMT PAs and Mixers

InGaP/GaAsSb/InGaAsSb/InP Double Heterojunction Bipolar Transistors With Record f t of 813 GHz

Feasibility Study of Wafer-Level Backside Process for InP-Based ICs

Reliability Instability Assessment with Interfacial Trapping Analysis for the Optimization of Al Composition in AlxGa1−xN/GaN High Electron Mobility Transistors

Performance Enhancement of AlGaN/GaN HEMT via Trap-State Improvement Using O2 Plasma Treatment

Analytical and Physical Investigation on Source Resistance in InxGa1−xAs Quantum-Well High-Electron-Mobility Transistors

Theoretical and experimental analysis of the source resistance components in In0.7Ga0.3As quantum-well high-electron-mobility transistors

Sub-50 nm Terahertz In0.8Ga0.2As Quantum-Well High-Electron-Mobility Transistors for 6G Applications

Sub-30-nm In0.8Ga0.2As Composite-Channel High-Electron-Mobility Transistors With Record High-Frequency Characteristics

Analytical and Physical Investigation on Source Resistance in InIx/IGaI1−x/IAs Quantum-Well High-Electron-Mobility Transistors

Impact of strained GaAs spacer between InP emitter and GaAs1−ySby base on structural properties and electrical characteristics of MOCVD-grown InP/GaAs1−ySby/InP DHBTs

Impact of the Source-to-Drain Spacing on the DC and RF Characteristics of InGaAs/InAlAs High-Electron Mobility Transistors

A Comprehensive Benchmarking Method for the Net Combination of Mobility Enhancement and Density-of-States Bottleneck

[Formula Omitted]nm InAlAs/InGaAs High-Electron- Mobility Transistors With a g m_max of 3 S/mm and [Formula Omitted] of 559 GHz

Composition and doping control for metal-organic chemical vapor deposition of InP-based double heterojunction bipolar transistor with hybrid base structure consisting of GaAsSb contact and InGaAsSb graded layers

MOCVD-grown compressively strained C-doped InxGa1−xAs1−ySby with high-In/Sb content for very low turn-on-voltage InP-based DHBTs

Physics-Based Analytical Channel Charge Model of In x Ga1- x As/In0.52Al0.48As Quantum-Well Field-Effect Transistors From Subthreshold to Strong Inversion Regimes

InGaP/GaAsSb/InGaAsSb double heterojunction bipolar transistors with 703-GHz fmax and 5.4-V breakdown voltage

On the universality of drain-induced-barrier-lowering in field-effect transistors

text\text\text quantum-well high-electron-mobility transistors with a record combination of \mathrm} and \mathrm: From the mobility relevant to ballistic transport regimes

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