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Exploring Hydrogenation and Fluorination in Curved 2D Carbon Systems: A Density Functional Theory Study on Corannulene

The journal of physical chemistry. A, Molecules, spectroscopy, kinetics, environment, & general theory, 2012-09, Vol.116 (36), p.9080-9087

2012

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Conformational Effects on Structure, Electron States, and Raman Scattering Properties of Linear Carbon Chains Terminated by Graphene-Like Pieces

Journal of physical chemistry. C, 2010-10, Vol.114 (39), p.16367-16372

2010

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Growth of thick GaN layers with hydride vapour phase epitaxy

Journal of crystal growth, 2005-07, Vol.281 (1), p.17-31

2005

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Analysis of the sharp donor-acceptor pair luminescence in 4H-SiC doped with nitrogen and aluminum

Physical review. B, Condensed matter and materials physics, 2003-04, Vol.67 (16)

2003

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Fast growth of high quality GaN

Physica status solidi. A, Applied research, 2003-11, Vol.200 (1), p.13-17

2003

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Common point defects in as-grown ZnO substrates studied by optical detection of magnetic resonance

Journal of crystal growth, 2008-03, Vol.310 (5), p.1006-1009

2008

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Large-area free-standing GaN substrate grown by hydride vapor phase epitaxy on epitaxial lateral overgrown GaN template

Physica. B, Condensed matter, 2006, Vol.371 (1), p.133-139

2006

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Micro-Raman scattering profiling studies on HVPE-grown free-standing GaN

Physica status solidi. A, Applied research, 2004-09, Vol.201 (12), p.2773-2776

2004

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Defects in SiC

Physica. B, Condensed matter, 2003-12, Vol.340-342, p.15-24

2003

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Hydride vapor-phase epitaxial GaN thick films for quasi-substrate applications : Strain distribution and wafer bending

Journal of electronic materials, 2004-05, Vol.33 (5), p.389-394

2004

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Influence of dislocation density on photoluminescence intensity of GaN

Journal of crystal growth, 2005-05, Vol.278 (1), p.406-410

2005

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Effects of N doping on the electronic properties of a small carbon atomic chain with distinct sp(2) terminations: A first-principles study

Physical review. B, Condensed matter and materials physics, 2011, Vol.84 (7), p.075417

2011

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Resonant sharp hot free-exciton luminescence in 6H- and 4H-SiC due to inhibited exciton-phonon interaction

Physical review. B, Condensed matter, 2001, Vol.64 (8), Article 085203

2001

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Characterization of High-Quality Free-Standing GaN Grown by HVPE

Physica scripta, 2004-01, Vol.2004, p.18-21

2004

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Optical selection rules for shallow donors in 4H-SiC and ionization energy of the nitrogen donor at the hexagonal site

Physical review. B, Condensed matter and materials physics, 2003-04, Vol.67 (16)

2003

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Thermal conductivity of isotopically enriched silicon carbide

19th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC), 2013, p.58-61

2013

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Exploring Hydrogenation and Fluorination in Curved 2D Carbon Systems: A Density Functional Theory Study on Corannulene

Conformational Effects on Structure, Electron States, and Raman Scattering Properties of Linear Carbon Chains Terminated by Graphene-Like Pieces

Growth of thick GaN layers with hydride vapour phase epitaxy

Analysis of the sharp donor-acceptor pair luminescence in 4H-SiC doped with nitrogen and aluminum

Fast growth of high quality GaN

Common point defects in as-grown ZnO substrates studied by optical detection of magnetic resonance

Large-area free-standing GaN substrate grown by hydride vapor phase epitaxy on epitaxial lateral overgrown GaN template

Micro-Raman scattering profiling studies on HVPE-grown free-standing GaN

Defects in SiC

Hydride vapor-phase epitaxial GaN thick films for quasi-substrate applications : Strain distribution and wafer bending

Influence of dislocation density on photoluminescence intensity of GaN

Effects of N doping on the electronic properties of a small carbon atomic chain with distinct sp(2) terminations: A first-principles study

Resonant sharp hot free-exciton luminescence in 6H- and 4H-SiC due to inhibited exciton-phonon interaction

Characterization of High-Quality Free-Standing GaN Grown by HVPE

Optical selection rules for shallow donors in 4H-SiC and ionization energy of the nitrogen donor at the hexagonal site

Thermal conductivity of isotopically enriched silicon carbide

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