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A review of flexible lead-free piezoelectric energy harvester

Journal of alloys and compounds, 2022-10, Vol.918, p.165653, Article 165653

2022

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Investigations on the Degradation of 1.2-kV 4H-SiC MOSFETs Under Repetitive Short-Circuit Tests

IEEE transactions on electron devices, 2016-11, Vol.63 (11), p.4346-4351, Article 4346

2016

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4H-SiC Trench MOSFET With Floating/Grounded Junction Barrier-controlled Gate Structure

IEEE transactions on electron devices, 2017-11, Vol.64 (11), p.4568-4574

2017

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N-type B-S co-doping and S doping in diamond from first principles

Carbon (New York), 2018-04, Vol.130, p.458-465

2018

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SiC Trench MOSFET With Reduced Switching Loss and Increased Short-Circuit Capability

IEEE transactions on electron devices, 2020-09, Vol.67 (9), p.3685-3690

2020

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Expanding the dose window of step-etched space-modulated JTE for ultrahigh voltage 4H-SiC devices

Microelectronics, 2024-10, Vol.152, p.106387, Article 106387

2024

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12.5 kV SiC Gate Turn Off Thyristor With Trench-Modulated JTE Structure

IEEE transactions on electron devices, 2022-03, Vol.69 (3), p.1258-1264

2022

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A Deep Insight Into the Degradation of 1.2-kV 4H-SiC mosfets Under Repetitive Unclamped Inductive Switching Stresses

IEEE transactions on power electronics, 2018-06, Vol.33 (6), p.5251-5261

2018

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Loss Analysis of Thin Film Microstrip Line With Low Loss at D Band

Journal of lightwave technology, 2021-04, Vol.39 (8), p.2421-2430

2021

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Fabrication and characterization of integrated uncooled infrared sensor arrays using a-Si thin-film transistors as active elements

Journal of microelectromechanical systems, 2005-10, Vol.14 (5), p.1167-1177

2005

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Part-of-speech- and syntactic-aware graph convolutional network for aspect-level sentiment classification

Multimedia tools and applications, 2024-03, Vol.83 (10), p.28793-28806

2024

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A Datasheet-Driven Nonsegmented Empirical SPICE Model of SiC MOSFET With Improved Accuracy and Convergence Capability

IEEE transactions on electron devices, 2023-01, Vol.70 (1), p.1-9

2023

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First-principles calculation to N-type Li N Co-doping and Li doping in diamond

Diamond and related materials, 2020-12, Vol.110, p.108070, Article 108070

2020

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Dielectric Constant Determination for Thin Film by Using Reflection Resonance Microstrip Line Method

IEEE transactions on dielectrics and electrical insulation, 2022-02, Vol.29 (1), p.15-21

2022

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Variable-Focus Liquid Lens Based on EWOD

Journal of adhesion science and technology, 2012-09, Vol.26 (12-17), p.1941-1946

2012

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An uncooled microbolometer infrared detector based on poly-SiGe thermistor

Sensors and actuators. A. Physical., 2003-08, Vol.105 (3), p.286-292

2003

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Design and fabrication of single-chip a-Si TFT-based uncooled infrared sensors

Sensors and actuators. A. Physical., 2004-10, Vol.116 (2), p.257-263

2004

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Preparation and Properties of Waterborne Polyurethane with PDMS Side Chain

Advanced materials research, 2010, Vol.136, p.179-183

2010

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Wafer-Level Process for Single-Use Buckling-Film Microliter-Range Pumps

Journal of microelectromechanical systems, 2007-08, Vol.16 (4), p.795-801

2007

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n-type B-N Co-doping and N Doping in Diamond from First Principles

Computational Science – ICCS 2022, p.530-540

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Physics-based spice model on the dynamic characteristics of silicon carbide Schottky barrier diode

IET power electronics, 2016-12, Vol.9 (15), p.2803-2807

2016

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Etched junction termination extension with floating guard rings and middle rings for ultrahigh-voltage 4H-SiC PiN diodes

2016 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), 2016, p.418-421

2016

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Structural properties of hydrogenated amorphous silicon carbide alloys

Applied surface science, 2002-06, Vol.193 (1), p.138-143

2002

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Raman study of structural order of a-SiNx:H and its change upon thermal annealing

Journal of non-crystalline solids, 2001-10, Vol.291 (1-2), p.107-112

2001

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SIMS study on the initial oxidation process of AlN ceramic substrate in the air

Applied surface science, 1999-06, Vol.148 (1), p.73-78

1999

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A review of flexible lead-free piezoelectric energy harvester

Investigations on the Degradation of 1.2-kV 4H-SiC MOSFETs Under Repetitive Short-Circuit Tests

4H-SiC Trench MOSFET With Floating/Grounded Junction Barrier-controlled Gate Structure

N-type B-S co-doping and S doping in diamond from first principles

SiC Trench MOSFET With Reduced Switching Loss and Increased Short-Circuit Capability

Expanding the dose window of step-etched space-modulated JTE for ultrahigh voltage 4H-SiC devices

12.5 kV SiC Gate Turn Off Thyristor With Trench-Modulated JTE Structure

A Deep Insight Into the Degradation of 1.2-kV 4H-SiC mosfets Under Repetitive Unclamped Inductive Switching Stresses

Loss Analysis of Thin Film Microstrip Line With Low Loss at D Band

Fabrication and characterization of integrated uncooled infrared sensor arrays using a-Si thin-film transistors as active elements

Part-of-speech- and syntactic-aware graph convolutional network for aspect-level sentiment classification

A Datasheet-Driven Nonsegmented Empirical SPICE Model of SiC MOSFET With Improved Accuracy and Convergence Capability

First-principles calculation to N-type Li N Co-doping and Li doping in diamond

Dielectric Constant Determination for Thin Film by Using Reflection Resonance Microstrip Line Method

Variable-Focus Liquid Lens Based on EWOD

An uncooled microbolometer infrared detector based on poly-SiGe thermistor

Design and fabrication of single-chip a-Si TFT-based uncooled infrared sensors

Preparation and Properties of Waterborne Polyurethane with PDMS Side Chain

Wafer-Level Process for Single-Use Buckling-Film Microliter-Range Pumps

n-type B-N Co-doping and N Doping in Diamond from First Principles

Physics-based spice model on the dynamic characteristics of silicon carbide Schottky barrier diode

Etched junction termination extension with floating guard rings and middle rings for ultrahigh-voltage 4H-SiC PiN diodes

Structural properties of hydrogenated amorphous silicon carbide alloys

Raman study of structural order of a-SiNx:H and its change upon thermal annealing

SIMS study on the initial oxidation process of AlN ceramic substrate in the air

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