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Leakage current analysis of silicon diode with anode activated by furnace annealing or laser annealing using deep level transient spectroscopy

AIP advances, 2020-12, Vol.10 (12), p.125301-125301-9

2020

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Turn On/Off Delay Time Control for Current Balancing in Parallel Connected IGBTs without Increasing Switching Loss

IEEJ JOURNAL OF INDUSTRY APPLICATIONS, 2022-01, Vol.11 (1), p.187-188, Article L21000771

2022

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Self-Adaptive Gate Control for Efficient Escape from Local Minimum Energy on Invertible Logic

IEEE access, 2023-01, Vol.11, p.1-1

2023

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Effect of Negative Gate Voltage on the Turn-off Performance of Si-IGBT Device

IEEJ JOURNAL OF INDUSTRY APPLICATIONS, 2020-09, Vol.9 (5), p.557-562

2020

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Gate Driver ICs with Closed-Loop Current Balancing Control for Parallel Connected IGBTs

IEEJ JOURNAL OF INDUSTRY APPLICATIONS, 2022-11, Vol.11 (6), p.822-832, Article 22003741

2022

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Sparse Random Signals for Fast Convergence on Invertible Logic

IEEE access, 2021, Vol.9, p.62890-62898

2021

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Stacked Assembly of SiC Cascode Using Buried Gate Static Induction Transistor

IEEE transactions on components, packaging, and manufacturing technology (2011), 2020-10, Vol.10 (10), p.1754-1757

2020

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3 kV Normally-Off 4H-SiC Buried Gate Static Induction Transistors (SiC-BGSITs)

Materials science forum, 2014-02, Vol.778-780, p.899-902, Article 899

2014

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Extremely Low ON-Resistance SiC Cascode Configuration Using Buried-Gate Static Induction Transistor

IEEE electron device letters, 2018-12, Vol.39 (12), p.1892-1895, Article 1892

2018

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Carrier Localization Suppression by Multipath Transport in Helical Polyacetylene

Journal of physical chemistry. C, 2015-05, Vol.119 (19), p.10282-10287

2015

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An Average Input Current Sensing Method of LLC Resonant Converters for Automatic Burst Mode Control

IEEE transactions on power electronics, 2017-04, Vol.32 (4), p.3263-3272

2017

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Experimental Study of Short-Circuit Capability of Normally-off SiC-BGSITs

Materials science forum, 2013-01, Vol.740-742, p.962-965

2013

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980 V, 33A Normally-Off 4H-SiC Buried Gate Static Induction Transistors

Materials science forum, 2011, Vol.679-680, p.662-665

2011

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An average input current sensing method of LLC resonant converters for precise overload protection

2017 IEEE Applied Power Electronics Conference and Exposition (APEC), 2017, p.267-272

2017

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Short-Circuit Capability of SiC Buried-Gate Static Induction Transistors: Basic Mechanism and Impacts of Channel Width on Short-Circuit Performance

IEEE transactions on electron devices, 2010-04, Vol.57 (4), p.919-927

2010

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Crystalline Quality of Channel Regions in SiC Buried Gate Static Induction Transistors (SiC-BGSITs)

Materials science forum, 2010-01, Vol.645-648, p.535-538

2010

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Short-Circuit Operation of SiC Buried Gate Static Induction Transistors (SiC BGSITs)

Materials science forum, 2009-01, Vol.615-617, p.739-742

2009

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Direct measurement of charge transport through helical poly(ethyl propiolate) nanorods wired into gaps in single walled carbon nanotubes

Nanotechnology, 2009-03, Vol.20 (10), p.105201-105201

2009

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1200 V, 35 A SiC-BGSIT with improved blocking gain of 480

2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2010, p.357-360

2010

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Three Dimensional Analysis of Turnoff Operation of SiC Buried Gate Static Induction Transistors (BG-SITs)

Materials science forum, 2009, Vol.600-603, p.1075-1078

2009

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Performance of lateral SOI-MOS static induction transistors for RF power applications

Solid-state electronics, 2005-07, Vol.49 (7), p.1233-1240

2005

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A Modified Nearest Neighbor Method for Image Reconstruction in Fluorescence Microscopy

Image Analysis and Recognition, p.9-16

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Buried Gate Static Induction Transistors in 4H-SiC (SiC-BGSITs) with Ultra Low On-Resistance

Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's, 2007, p.93-96

2007

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Role of Carbon and Nitrogen on the Transformation of the σ Phase in Highly Purified Fe-50 mass%Cr Alloys

Materials transactions. JIM, 2000, Vol.41 (1), p.122-129

2000

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High-power rectifier using the BSIT operation

IEEE transactions on electron devices, 1998-02, Vol.45 (2), p.563-565

1998

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Leakage current analysis of silicon diode with anode activated by furnace annealing or laser annealing using deep level transient spectroscopy

Turn On/Off Delay Time Control for Current Balancing in Parallel Connected IGBTs without Increasing Switching Loss

Self-Adaptive Gate Control for Efficient Escape from Local Minimum Energy on Invertible Logic

Effect of Negative Gate Voltage on the Turn-off Performance of Si-IGBT Device

Gate Driver ICs with Closed-Loop Current Balancing Control for Parallel Connected IGBTs

Sparse Random Signals for Fast Convergence on Invertible Logic

Stacked Assembly of SiC Cascode Using Buried Gate Static Induction Transistor

3 kV Normally-Off 4H-SiC Buried Gate Static Induction Transistors (SiC-BGSITs)

Extremely Low ON-Resistance SiC Cascode Configuration Using Buried-Gate Static Induction Transistor

Carrier Localization Suppression by Multipath Transport in Helical Polyacetylene

An Average Input Current Sensing Method of LLC Resonant Converters for Automatic Burst Mode Control

Experimental Study of Short-Circuit Capability of Normally-off SiC-BGSITs

980 V, 33A Normally-Off 4H-SiC Buried Gate Static Induction Transistors

An average input current sensing method of LLC resonant converters for precise overload protection

Short-Circuit Capability of SiC Buried-Gate Static Induction Transistors: Basic Mechanism and Impacts of Channel Width on Short-Circuit Performance

Crystalline Quality of Channel Regions in SiC Buried Gate Static Induction Transistors (SiC-BGSITs)

Short-Circuit Operation of SiC Buried Gate Static Induction Transistors (SiC BGSITs)

Direct measurement of charge transport through helical poly(ethyl propiolate) nanorods wired into gaps in single walled carbon nanotubes

1200 V, 35 A SiC-BGSIT with improved blocking gain of 480

Three Dimensional Analysis of Turnoff Operation of SiC Buried Gate Static Induction Transistors (BG-SITs)

Performance of lateral SOI-MOS static induction transistors for RF power applications

A Modified Nearest Neighbor Method for Image Reconstruction in Fluorescence Microscopy

Buried Gate Static Induction Transistors in 4H-SiC (SiC-BGSITs) with Ultra Low On-Resistance

Role of Carbon and Nitrogen on the Transformation of the σ Phase in Highly Purified Fe-50 mass%Cr Alloys

High-power rectifier using the BSIT operation

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