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Minority carrier lifetime in silicon photovoltaics: The effect of oxygen precipitation

Solar energy materials and solar cells, 2014-01, Vol.120, p.402-411

2014

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Generation and loss of hydrogen-boron pairs in fired silicon wafers

Materials science in semiconductor processing, 2023-11, Vol.167, p.107796, Article 107796

2023

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On the equilibrium concentration of boron-oxygen defects in crystalline silicon

Solar energy materials and solar cells, 2017-12, Vol.173, p.33-36

2017

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Behavior of volatile dopants (P, Sb) in Czochralski silicon growth

Journal of crystal growth, 2017-02, Vol.460, p.13-15

2017

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In-situ characterization of electron-assisted regeneration of Cz-Si solar cells

Solar energy materials and solar cells, 2018-10, Vol.185, p.283-286

2018

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Intrinsic Point Defects and Impurities in Silicon Crystal Growth

Journal of the Electrochemical Society, 2002-03, Vol.149 (3), p.G167

2002

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Determining the Parameters of the Jones–Wilkins–Lee Equation of State of Explosives on the Basis of Data Obtained by the Barrier Method

Combustion, explosion, and shock waves, 2023-10, Vol.59 (5), p.576-581

2023

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Lifetimes exceeding 1 ms in 1-Ω cm boron-doped Cz-silicon

Solar energy materials and solar cells, 2014, Vol.131, p.51-57

2014

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The effect of nitrogen on void formation in Czochralski silicon crystals

Journal of crystal growth, 2005-01, Vol.273 (3), p.412-423

2005

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Intrinsic point defects and grown-in microdefects in silicon crystals—comment on: “Intrinsic point defect behaviour in silicon crystals during growth from the melt: A model derived from experimental results”, T. Abe, T. Takahashi, Journal of Crystal Growth 334 (2011) 16

Journal of crystal growth, 2012-07, Vol.351 (1), p.115-117

2012

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Grown-in microdefects, residual vacancies and oxygen precipitation bands in Czochralski silicon

Journal of crystal growth, 1999-08, Vol.204 (4), p.462-474

1999

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The engineering of intrinsic point defects in silicon wafers and crystals

Materials science & engineering. B, Solid-state materials for advanced technology, 2000-04, Vol.73 (1), p.87-94

2000

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Vacancy-type microdefect formation in Czochralski silicon

Journal of crystal growth, 1998-11, Vol.194 (1), p.76-88

1998

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The diffusivity of the vacancy in silicon: Is it fast or slow?

Materials science in semiconductor processing, 2012-12, Vol.15 (6), p.697-702

2012

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Properties of vacancies and self-interstitials in silicon deduced from crystal growth, wafer processing, self-diffusion and metal diffusion

Materials science & engineering. B, Solid-state materials for advanced technology, 2006-10, Vol.134 (2), p.227-232

2006

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Correlated out-diffusion of nitrogen and in-diffusion of self-interstitials resulting in elimination of nitrogen-related deep centres

Thin solid films, 2010-02, Vol.518 (9), p.2346-2349

2010

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Gigantic uphill drift of vacancies and self-interstitials in silicon

Materials science & engineering. B, Solid-state materials for advanced technology, 2009-03, Vol.159, p.138-141

2009

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Nitrogen interaction with vacancies in silicon

Materials science & engineering. B, Solid-state materials for advanced technology, 2004-12, Vol.114, p.130-134

2004

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Intrinsic Point Defects in Silicon Crystal Growth

Solid state phenomena, 2011-08, Vol.178-179, p.3-14

2011

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Transformations of diphenyl sulfide and diphenylamine on aluminum chloride

Petroleum chemistry, 2017, Vol.57 (3), p.272-277

2017

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The effect of carbon and antimony on grown-in microdefects in Czochralski silicon crystals

Materials science & engineering. B, Solid-state materials for advanced technology, 2006-10, Vol.134 (2), p.185-188

2006

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(Invited) Boron-Oxygen Related Lifetime Degradation in p-type and n-type Silicon

ECS transactions, 2013, Vol.50 (5), p.123-136

2013

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Light-induced Lifetime Degradation in Boron-doped Czochralski Silicon: Are Oxygen Dimers Involved?

Energy procedia, 2013, Vol.38, p.636-641

2013

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Evidence of energy levels due to nitrogen dimers in silicon

Materials science & engineering. B, Solid-state materials for advanced technology, 2009-03, Vol.159, p.142-144

2009

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Effect of doping on point defect incorporation during silicon growth

Microelectronic engineering, 2001-05, Vol.56 (1), p.165-168

2001

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Minority carrier lifetime in silicon photovoltaics: The effect of oxygen precipitation

Generation and loss of hydrogen-boron pairs in fired silicon wafers

On the equilibrium concentration of boron-oxygen defects in crystalline silicon

Behavior of volatile dopants (P, Sb) in Czochralski silicon growth

In-situ characterization of electron-assisted regeneration of Cz-Si solar cells

Intrinsic Point Defects and Impurities in Silicon Crystal Growth

Determining the Parameters of the Jones–Wilkins–Lee Equation of State of Explosives on the Basis of Data Obtained by the Barrier Method

Lifetimes exceeding 1 ms in 1-Ω cm boron-doped Cz-silicon

The effect of nitrogen on void formation in Czochralski silicon crystals

Intrinsic point defects and grown-in microdefects in silicon crystals—comment on: “Intrinsic point defect behaviour in silicon crystals during growth from the melt: A model derived from experimental results”, T. Abe, T. Takahashi, Journal of Crystal Growth 334 (2011) 16

Grown-in microdefects, residual vacancies and oxygen precipitation bands in Czochralski silicon

The engineering of intrinsic point defects in silicon wafers and crystals

Vacancy-type microdefect formation in Czochralski silicon

The diffusivity of the vacancy in silicon: Is it fast or slow?

Properties of vacancies and self-interstitials in silicon deduced from crystal growth, wafer processing, self-diffusion and metal diffusion

Correlated out-diffusion of nitrogen and in-diffusion of self-interstitials resulting in elimination of nitrogen-related deep centres

Gigantic uphill drift of vacancies and self-interstitials in silicon

Nitrogen interaction with vacancies in silicon

Intrinsic Point Defects in Silicon Crystal Growth

Transformations of diphenyl sulfide and diphenylamine on aluminum chloride

The effect of carbon and antimony on grown-in microdefects in Czochralski silicon crystals

(Invited) Boron-Oxygen Related Lifetime Degradation in p-type and n-type Silicon

Light-induced Lifetime Degradation in Boron-doped Czochralski Silicon: Are Oxygen Dimers Involved?

Evidence of energy levels due to nitrogen dimers in silicon

Effect of doping on point defect incorporation during silicon growth

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