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Crystallinity and Photoluminescence Evaluation of Er-Implanted n-Type 4H-SiC Subjected to an Annealing Process

Materials science forum, 2004-01, Vol.457-460, p.779-782

2004

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Photoluminescence from Er-implanted polycrystalline 3C SiC

IEEE transactions on electron devices, 1999-03, Vol.46 (3), p.572-576

1999

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Fabrication of heterostructure p-β-Fe0.95Mn0.05Si2/n-Si diodes by Fe+ and Mn+ co-implantation in Si(100) substrates

Thin solid films, 2001-01, Vol.381 (2), p.244-250

2001

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Hydrodynamic model of thin film deposition

Microelectronic engineering, 1998-08, Vol.43-44, p.519-526

1998

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Luminescence Properties of Er Implanted Polycrystalline 3C SiC

Materials science forum, 1998-01, Vol.264-268, p.505-508

1998

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Analysis of reaction gases flow in CVD processes

Materials science & engineering. B, Solid-state materials for advanced technology, 1995-12, Vol.35 (1), p.156-159

1995

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Luminescence properties of Er implanted p-type and n-type 3C SiC/Si

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1999, Vol.148 (1), p.507-511

1999

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Formation of polycrystalline β-FeSi2 layers by ion-implantation and their optical properties

Materials science & engineering. A, Structural materials : properties, microstructure and processing, 1998-09, Vol.253 (1-2), p.284-291

1998

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Influence of impurities (nitrogen, oxygen) on Er-related emission in gallium phosphide

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1997-05, Vol.127, p.541-544

1997

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Structural and optical characterization of β-FeSi2 layers on Si formed by ion beam synthesis

Thin solid films, 1995-12, Vol.270 (1-2), p.406-410

1995

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Excitation mechanisms of electro- and photo-luminescence of Er3+ in Er-implanted Si

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1997-05, Vol.127-128, p.537-540

1997

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Optical activation of Er3+ in silicon co-implanted with carbon

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1995-12, Vol.106 (1-4), p.477-479

1995

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Synthesis of metastable group-IV alloy semiconductors by ion implantation and ion-beam-induced epitaxial crystallization

Applied surface science, 1996-07, Vol.100, p.498-502

1996

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Crystallization of SiSn and SiSnC layers in Si by solid phase epitaxy and ion-beam-induced epitaxy

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1997, Vol.121 (1), p.199-202

1997

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Ion-beam-induced epitaxial crystallization (IBIEC) and solid phase epitaxial growth (SPEG) of Si1−xCx layers in Si fabricated by C ion implantation

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1997-05, Vol.127-128, p.350-354

1997

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Structural and electrical properties of Co-doped β-FeSi2 thin films prepared by RF magnetron sputtering

Physics procedia, 2012, Vol.23, p.9-12

2012

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Optical and electrical characterizations of Mn doped p-type β-FeSi2

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1999-01, Vol.147 (1-4), p.337-342

1999

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Development of microwave absorbing materials prepared from a polymer binder including Japanese lacquer and epoxy resin

Physics procedia, 2012, Vol.23, p.69-72

2012

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Photoluminescence studies of epitaxial Si1−xGex and Si1−x−yGexCy layers on Si formed by ion beam synthesis

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1997-01, Vol.121 (1-4), p.146-150

1997

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Structural and electrical properties of β-FeSi2 bulk materials for thermoelectric applications

Physics procedia, 2012, Vol.23, p.13-16

2012

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Stress Corrosion Cracking of Cu Interconnects during CMP with a Cu/Porous Low-k Structure

Journal of the Electrochemical Society, 2005, Vol.152 (6), p.G506

2005

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Hydrodynamic description of epitaxial film growth in a horizontal reactor

Journal of crystal growth, 1997-01, Vol.170 (1-4), p.61-65

1997

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A column-base InP lateral bipolar transistor

IEEE electron device letters, 1988-08, Vol.9 (8), p.380-382

1988

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Light Emission from Er-Implanted Silicon Using Anodization

Materials science forum, 1995-01, Vol.196-201, p.603-608

1995

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Hyperthermal (30–500 eV) C + ion-beam doping into GaAs during molecular beam epitaxy

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1995-03, Vol.96 (1), p.331-334

1995

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Crystallinity and Photoluminescence Evaluation of Er-Implanted n-Type 4H-SiC Subjected to an Annealing Process

Photoluminescence from Er-implanted polycrystalline 3C SiC

Fabrication of heterostructure p-β-Fe0.95Mn0.05Si2/n-Si diodes by Fe+ and Mn+ co-implantation in Si(100) substrates

Hydrodynamic model of thin film deposition

Luminescence Properties of Er Implanted Polycrystalline 3C SiC

Analysis of reaction gases flow in CVD processes

Luminescence properties of Er implanted p-type and n-type 3C SiC/Si

Formation of polycrystalline β-FeSi2 layers by ion-implantation and their optical properties

Influence of impurities (nitrogen, oxygen) on Er-related emission in gallium phosphide

Structural and optical characterization of β-FeSi2 layers on Si formed by ion beam synthesis

Excitation mechanisms of electro- and photo-luminescence of Er3+ in Er-implanted Si

Optical activation of Er3+ in silicon co-implanted with carbon

Synthesis of metastable group-IV alloy semiconductors by ion implantation and ion-beam-induced epitaxial crystallization

Crystallization of SiSn and SiSnC layers in Si by solid phase epitaxy and ion-beam-induced epitaxy

Ion-beam-induced epitaxial crystallization (IBIEC) and solid phase epitaxial growth (SPEG) of Si1−xCx layers in Si fabricated by C ion implantation

Structural and electrical properties of Co-doped β-FeSi2 thin films prepared by RF magnetron sputtering

Optical and electrical characterizations of Mn doped p-type β-FeSi2

Development of microwave absorbing materials prepared from a polymer binder including Japanese lacquer and epoxy resin

Photoluminescence studies of epitaxial Si1−xGex and Si1−x−yGexCy layers on Si formed by ion beam synthesis

Structural and electrical properties of β-FeSi2 bulk materials for thermoelectric applications

Stress Corrosion Cracking of Cu Interconnects during CMP with a Cu/Porous Low-k Structure

Hydrodynamic description of epitaxial film growth in a horizontal reactor

A column-base InP lateral bipolar transistor

Light Emission from Er-Implanted Silicon Using Anodization

Hyperthermal (30–500 eV) C + ion-beam doping into GaAs during molecular beam epitaxy

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