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Admittance studies of modification of HgCdTe surface properties with ion implantation and thermal annealing

Surface & coatings technology, 2020-06, Vol.392, p.1-5, Article 125760

2020

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Optical Studies of Molecular-Beam Epitaxy-Grown Hg1−xCdxTe with x = 0.7–0.8

Journal of electronic materials, 2020-08, Vol.49 (8), p.4642-4646

2020

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Accumulation of Arsenic Implantation-Induced Donor Defects in Hg0.7Cd0.3Te Heteroepitaxial Structures

Journal of electronic materials, 2021-06, Vol.50 (6), p.3714-3721

2021

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Electrical profiling of arsenic-implanted HgCdTe films performed with discrete mobility spectrum analysis

Semiconductor science and technology, 2019-03, Vol.34 (3), p.35009

2019

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Photoluminescence of Molecular Beam Epitaxy-Grown Mercury Cadmium Telluride: Comparison of HgCdTe/GaAs and HgCdTe/Si Technologies

Journal of electronic materials, 2018-08, Vol.47 (8), p.4731-4736

2018

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Hall-effect studies of modification of HgCdTe surface properties with ion implantation and thermal annealing

Surface & coatings technology, 2020-07, Vol.393, p.125721, Article 125721

2020

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Ion-milling-assisted study of defect structure of acceptor-doped HgCdTe heterostructures grown by molecular beam epitaxy

Semiconductor science and technology, 2008-09, Vol.23 (9), p.095001

2008

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Relaxation of electrical properties of n-type layers formed by ion milling in epitaxial HgCdTe doped with V-group acceptors

Semiconductor science and technology, 2006-08, Vol.21 (8), p.1144-1149

2006

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Porous GaN/SiC templates for homoepitaxial growth: effect of the built-in stress on the formation of porous structures

Semiconductor science and technology, 2005-01, Vol.20 (1), p.50-55

2005

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Electroluminescence of InAsSb-based mid-infrared LEDs in 4.2-300 K temperature range

Journal of physics. Conference series, 2017-11, Vol.917 (5), p.52005

2017

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Distribution profiles of radiation donor defects in arsenic-implanted HgCdTe films

Journal of physics. Conference series, 2018-11, Vol.1115 (3), p.32063

2018

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Na2SiO3 liquid glass-based phosphor material for white LEDs

Physica status solidi. A, Applications and materials science, 2015-12, Vol.212 (12), p.2964-2967

2015

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The nature of the compositional dependence of p–n junction depth in ion-milled p-HgCdTe

Semiconductor science and technology, 2006-02, Vol.21 (2), p.116-123

2006

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Application of a LED-photodiode optocouple for the study of human respiratory function

Journal of physics. Conference series, 2015-11, Vol.643 (1), p.12026

2015

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Acceptor states and carrier lifetime in heteroepitaxial HgCdTe-on-Si for mid-infrared photodetectors

Journal of physics. Conference series, 2015-11, Vol.643 (1), p.12004

2015

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Ion implantation and ion milling in MBE Hg1-|>xCdxTe films

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2012-02, Vol.272, p.313-317

2012

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Defect structure of HgCdTe films grown by molecular beam epitaxy on Si substrates

Semiconductor science and technology, 2012-03, Vol.27 (3), p.035001

2012

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Light trapping by chemically micro-textured glass for crystalline silicon solar cells

Opto-electronics review, 2018-12, Vol.26 (4), p.307-311

2018

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Donor doping of HgCdTe for LWIR and MWIR structures fabricated with ion milling

Semiconductor science and technology, 2009-02, Vol.24 (2), p.025031-025031 (4)

2009

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Semi-insulating porous SiC substrates

Semiconductor science and technology, 2003-06, Vol.18 (6), p.602-606

2003

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Ion milling-induced conductivity-type conversion in p-type HgCdTe MBE-grown films with graded-gap surface layers

Semiconductor science and technology, 2010-06, Vol.25 (6), p.065012-065012

2010

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Numerical analysis of the energy-band diagram of type-II p-GaInAsSb/p-InAs heterojunction and size-quantization levels at the interface

Semiconductor science and technology, 2001-09, Vol.16 (9), p.812-815, Article 812

2001

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Arsenic incorporation in MBE-grown HgCdTe studied with the use of ion milling

Physica status solidi. C, 2010-06, Vol.7 (6), p.1618-1620

2010

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Optical properties of molecular beam epitaxy-grown HgCdTe structures with potential wells

Physica status solidi. C, 2010-06, Vol.7 (6), p.1621-1623

2010

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Analysis of carrier species in arsenic-implanted p- and n-type Hg0.7Cd0.3Te

Infrared physics & technology, 2021-05, Vol.114, p.103665, Article 103665

2021

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Admittance studies of modification of HgCdTe surface properties with ion implantation and thermal annealing

Optical Studies of Molecular-Beam Epitaxy-Grown Hg1−xCdxTe with x = 0.7–0.8

Accumulation of Arsenic Implantation-Induced Donor Defects in Hg0.7Cd0.3Te Heteroepitaxial Structures

Electrical profiling of arsenic-implanted HgCdTe films performed with discrete mobility spectrum analysis

Photoluminescence of Molecular Beam Epitaxy-Grown Mercury Cadmium Telluride: Comparison of HgCdTe/GaAs and HgCdTe/Si Technologies

Hall-effect studies of modification of HgCdTe surface properties with ion implantation and thermal annealing

Ion-milling-assisted study of defect structure of acceptor-doped HgCdTe heterostructures grown by molecular beam epitaxy

Relaxation of electrical properties of n-type layers formed by ion milling in epitaxial HgCdTe doped with V-group acceptors

Porous GaN/SiC templates for homoepitaxial growth: effect of the built-in stress on the formation of porous structures

Electroluminescence of InAsSb-based mid-infrared LEDs in 4.2-300 K temperature range

Distribution profiles of radiation donor defects in arsenic-implanted HgCdTe films

Na2SiO3 liquid glass-based phosphor material for white LEDs

The nature of the compositional dependence of p–n junction depth in ion-milled p-HgCdTe

Application of a LED-photodiode optocouple for the study of human respiratory function

Acceptor states and carrier lifetime in heteroepitaxial HgCdTe-on-Si for mid-infrared photodetectors

Ion implantation and ion milling in MBE Hg1-|>xCdxTe films

Defect structure of HgCdTe films grown by molecular beam epitaxy on Si substrates

Light trapping by chemically micro-textured glass for crystalline silicon solar cells

Donor doping of HgCdTe for LWIR and MWIR structures fabricated with ion milling

Semi-insulating porous SiC substrates

Ion milling-induced conductivity-type conversion in p-type HgCdTe MBE-grown films with graded-gap surface layers

Numerical analysis of the energy-band diagram of type-II p-GaInAsSb/p-InAs heterojunction and size-quantization levels at the interface

Arsenic incorporation in MBE-grown HgCdTe studied with the use of ion milling

Optical properties of molecular beam epitaxy-grown HgCdTe structures with potential wells

Analysis of carrier species in arsenic-implanted p- and n-type Hg0.7Cd0.3Te

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