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Graphene-like AlN layer formation on (111)Si surface by ammonia molecular beam epitaxy

Journal of crystal growth, 2015-10, Vol.428, p.93-97

2015

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Evolution of the surface states during the in situ SiN layer formation on AlN/GaN heterostructures

Semiconductor science and technology, 2020-07, Vol.35 (7), p.75004

2020

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Mg3N2 nanocrystallites formation during the GaN:Mg layers growth by the NH3-MBE technique

Journal of crystal growth, 2021-01, Vol.554, p.125963, Article 125963

2021

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Moving photoluminescence band in AlGaN GaN heterostructures

Semiconductor science and technology, 2015-08, Vol.30 (8), p.85010

2015

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Nature of intensive defect-related broadband luminescence of heavily doped AlxGa1-xN:Si layers

Journal of physics. Conference series, 2017, Vol.816 (1)

2017

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Surface Polaritons in Silicon-Doped Aluminum and Gallium Nitride Films

Optics and spectroscopy, 2019-07, Vol.127 (1), p.36-39

2019

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Nitridation effect on sapphire surface polaritons

Surface & coatings technology, 2013-07, Vol.227, p.58-61

2013

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TEM study of defects in AlxGa1−xN layers with different polarity

Journal of crystal growth, 2012-01, Vol.338 (1), p.30-34

2012

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Human-centered design of a distributed knowledge management system

Journal of biomedical informatics, 2005-02, Vol.38 (1), p.4-17

2005

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EXAFS study of GaN/AlN multiple quantum wells grown by ammonia MBE

Physica status solidi. C, 2013-03, Vol.10 (3), p.311-314

2013

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Droplet epitaxy of 3D zinc-blende GaN islands on a 2D van der Waals SiN structure

Applied surface science, 2024-05, Vol.655, p.159595, Article 159595

2024

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Transformation of the elemental composition on the GaN surface during a 2D-3D transition

Applied surface science, 2022-03, Vol.577, p.151802, Article 151802

2022

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The comprehensive investigation of barrier layers on power loss mechanisms in AlGaN/GaN HEMT structures

Materials science & engineering. B, Solid-state materials for advanced technology, 2024-02, Vol.300, p.117075, Article 117075

2024

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Optical gain and stimulated emission in optically pumped heavily doped Al0.74Ga0.26N:Si structures with external cavity

Optical materials, 2020-07, Vol.105, p.109879, Article 109879

2020

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The effect of passivation layer, doping and spacer layer on electron- longitudinal optical phonon momentum relaxation time in Al0.3Ga0.7N/AlN/GaN heterostructures

Materials science in semiconductor processing, 2021-02, Vol.122, p.105449, Article 105449

2021

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Content coding and search for risk assessment: Problems and solutions

2016 IEEE Aerospace Conference, 2016, p.1-7

2016

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Energy relaxation of hot electrons by LO phonon emission in AlGaN/AlN/GaN heterostructure with in situ Si3N4 passivation

Journal of alloys and compounds, 2016-02, Vol.659, p.90-94

2016

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Scattering analysis of 2DEG mobility in undoped and doped AlGaN/AlN/GaN heterostructures with an in situ Si3N4 passivation layer

Solid-state electronics, 2016-04, Vol.118, p.12-17

2016

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Amplified luminescence of heavily doped AlxGa1 - xN structures under optical pumping

Quantum electronics (Woodbury, N.Y.), 2018-03, Vol.48 (3), p.215-221

2018

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Preserving the Privacy of Sensitive Relationships in Graph Data

Privacy, Security, and Trust in KDD, p.153-171

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Quantifying blue and green virtual water contents in global crop production as well as potential production losses without irrigation

Journal of hydrology (Amsterdam), 2010-04, Vol.384 (3), p.198-217

2010

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Occurrence and removal of endocrine disrupters in landfill leachate treatment plants

Water science and technology, 2003-01, Vol.48 (3), p.127-134

2003

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An estimation of global virtual water flow and sources of water withdrawal for major crops and livestock products using a global hydrological model

Journal of hydrology (Amsterdam), 2010-04, Vol.384 (3), p.232-244

2010

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Spatially explicit assessment of global consumptive water uses in cropland: Green and blue water

Journal of hydrology (Amsterdam), 2010-04, Vol.384 (3), p.187-197

2010

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Virtual water content of temperate cereals and maize: Present and potential future patterns

Journal of hydrology (Amsterdam), 2010-04, Vol.384 (3), p.218-231

2010

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Graphene-like AlN layer formation on (111)Si surface by ammonia molecular beam epitaxy

Evolution of the surface states during the in situ SiN layer formation on AlN/GaN heterostructures

Mg3N2 nanocrystallites formation during the GaN:Mg layers growth by the NH3-MBE technique

Moving photoluminescence band in AlGaN GaN heterostructures

Nature of intensive defect-related broadband luminescence of heavily doped AlxGa1-xN:Si layers

Surface Polaritons in Silicon-Doped Aluminum and Gallium Nitride Films

Nitridation effect on sapphire surface polaritons

TEM study of defects in AlxGa1−xN layers with different polarity

Human-centered design of a distributed knowledge management system

EXAFS study of GaN/AlN multiple quantum wells grown by ammonia MBE

Droplet epitaxy of 3D zinc-blende GaN islands on a 2D van der Waals SiN structure

Transformation of the elemental composition on the GaN surface during a 2D-3D transition

The comprehensive investigation of barrier layers on power loss mechanisms in AlGaN/GaN HEMT structures

Optical gain and stimulated emission in optically pumped heavily doped Al0.74Ga0.26N:Si structures with external cavity

The effect of passivation layer, doping and spacer layer on electron- longitudinal optical phonon momentum relaxation time in Al0.3Ga0.7N/AlN/GaN heterostructures

Content coding and search for risk assessment: Problems and solutions

Energy relaxation of hot electrons by LO phonon emission in AlGaN/AlN/GaN heterostructure with in situ Si3N4 passivation

Scattering analysis of 2DEG mobility in undoped and doped AlGaN/AlN/GaN heterostructures with an in situ Si3N4 passivation layer

Amplified luminescence of heavily doped AlxGa1 - xN structures under optical pumping

Preserving the Privacy of Sensitive Relationships in Graph Data

Quantifying blue and green virtual water contents in global crop production as well as potential production losses without irrigation

Occurrence and removal of endocrine disrupters in landfill leachate treatment plants

An estimation of global virtual water flow and sources of water withdrawal for major crops and livestock products using a global hydrological model

Spatially explicit assessment of global consumptive water uses in cropland: Green and blue water

Virtual water content of temperate cereals and maize: Present and potential future patterns

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