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Stability Considerations for Silicon Carbide Field-Effect Transistors

IEEE transactions on power electronics, 2013-10, Vol.28 (10), p.4453-4459

2013

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Achieving minimum bandwidth guarantees and work-conservation in large-scale, SDN-based datacenter networks

Computer networks (Amsterdam, Netherlands : 1999), 2017-11, Vol.127, p.109-125

2017

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Design of piezo-based AVC system for machine tool applications

Mechanical systems and signal processing, 2013-03, Vol.36 (1), p.53-65

2013

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Multifunctional structure solutions for Ultra High Precision (UHP) machine tools

International journal of machine tools & manufacture, 2010-04, Vol.50 (4), p.366-373

2010

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Instability in Half-Bridge Circuits Switched With Wide Band-Gap Transistors

IEEE transactions on power electronics, 2014-05, Vol.29 (5), p.2380-2392

2014

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Water distribution network robust design based on energy surplus index maximization

Water science & technology. Water supply, 2015-12, Vol.15 (6), p.1253-1258

2015

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Evaluation of statistical sampling for the assessment of residential consumption totals in water distribution networks

Water science & technology. Water supply, 2015-01, Vol.15 (1), p.173-180

2015

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Vertical Channel Silicon Carbide JFETs Based Operational Amplifiers

Materials science forum, 2013-01, Vol.740-742, p.1069-1072

2013

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NECESSARY CONDITIONS FOR SOLUTIONS TO VARIATIONAL PROBLEMS

SIAM journal on control and optimization, 2009-01, Vol.48 (5), p.2977-2983

2009

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CO2 Laser irradiation of GeO2 planar waveguide fabricated by rf-sputtering

IOP conference series. Materials Science and Engineering, 2015, Vol.73 (1)

2015

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Accurate battery pack modeling for automotive applications

Journal of power sources, 2013-09, Vol.237, p.215-228

2013

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Investigation of longitudinal-optical phonon-plasmon coupled modes in SiC epitaxial film using fourier transform infrared reflection

Journal of electronic materials, 2005-04, Vol.34 (4), p.320-323

2005

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Comparison between Entropy and Resilience as Indirect Measures of Reliability in the Framework of Water Distribution Network Design

Procedia engineering, 2014, Vol.70, p.379-388

2014

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Characterization and Modeling of SiC LTJFET for Analog Integrated Circuit Simulation and Design

Materials science forum, 2009-01, Vol.615-617, p.915-918

2009

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High-Temperature Operation of 50 A (1600 A/cm2), 600 V 4H-SiC Vertical-Channel JFETs for High-Power Applications

Materials science forum, 2009-01, Vol.600-603, p.1055-1058

2009

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Two- and three-dimensional simulation of Chemical Vapor Deposition SiC epitaxial growth processes

Journal of electronic materials, 2003-05, Vol.32 (5), p.448-451

2003

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The Design of an Operational Amplifier Using Silicon Carbide JFETs

IEEE transactions on circuits and systems. I, Regular papers, 2012-02, Vol.59 (2), p.255-265

2012

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High Quality Uniform SiC Epitaxy for Power Device Applications

Materials science forum, 2007-01, Vol.556-557, p.101-104

2007

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High-Temperature Static and Dynamic Reliability Study of 4H-SiC Vertical-Channel JFETs for High-Power System Applications

Materials science forum, 2009-01, Vol.600-603, p.1051-1054

2009

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The Role of Residual Source/Drain Implant Damage Traps on SiC MESFET Drain I-V Characteristics

Materials science forum, 2006-10, Vol.527-529, p.1247-1250

2006

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Inherently Safe Resonant Reset Forward Converter Using a Bias-Enhanced SiC JFET

Materials science forum, 2006-10, Vol.527-529, p.1211-1214

2006

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Selection of the Optimal Design Rainfall Return Period of Urban Drainage Systems

Procedia engineering, 2014, Vol.89, p.742-749

2014

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Influence of carrier freeze-out on SiC Schottky junction admittance

Journal of electronic materials, 2001-03, Vol.30 (3), p.235-241

2001

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On second order necessary conditions in infinite dimensional optimal control with state constraints

2019 IEEE 58th Conference on Decision and Control (CDC), 2019, p.2416-2421

2019

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Process-Dependent Charges and Traps in Dielectrics on SiC

Materials science forum, 2006-10, Vol.527-529, p.995-998

2006

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Stability Considerations for Silicon Carbide Field-Effect Transistors

Achieving minimum bandwidth guarantees and work-conservation in large-scale, SDN-based datacenter networks

Design of piezo-based AVC system for machine tool applications

Multifunctional structure solutions for Ultra High Precision (UHP) machine tools

Instability in Half-Bridge Circuits Switched With Wide Band-Gap Transistors

Water distribution network robust design based on energy surplus index maximization

Evaluation of statistical sampling for the assessment of residential consumption totals in water distribution networks

Vertical Channel Silicon Carbide JFETs Based Operational Amplifiers

NECESSARY CONDITIONS FOR SOLUTIONS TO VARIATIONAL PROBLEMS

CO2 Laser irradiation of GeO2 planar waveguide fabricated by rf-sputtering

Accurate battery pack modeling for automotive applications

Investigation of longitudinal-optical phonon-plasmon coupled modes in SiC epitaxial film using fourier transform infrared reflection

Comparison between Entropy and Resilience as Indirect Measures of Reliability in the Framework of Water Distribution Network Design

Characterization and Modeling of SiC LTJFET for Analog Integrated Circuit Simulation and Design

High-Temperature Operation of 50 A (1600 A/cm2), 600 V 4H-SiC Vertical-Channel JFETs for High-Power Applications

Two- and three-dimensional simulation of Chemical Vapor Deposition SiC epitaxial growth processes

The Design of an Operational Amplifier Using Silicon Carbide JFETs

High Quality Uniform SiC Epitaxy for Power Device Applications

High-Temperature Static and Dynamic Reliability Study of 4H-SiC Vertical-Channel JFETs for High-Power System Applications

The Role of Residual Source/Drain Implant Damage Traps on SiC MESFET Drain I-V Characteristics

Inherently Safe Resonant Reset Forward Converter Using a Bias-Enhanced SiC JFET

Selection of the Optimal Design Rainfall Return Period of Urban Drainage Systems

Influence of carrier freeze-out on SiC Schottky junction admittance

On second order necessary conditions in infinite dimensional optimal control with state constraints

Process-Dependent Charges and Traps in Dielectrics on SiC

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