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An 8-W 250-MHz to 3-GHz Decade-Bandwidth Low-Noise GaN MMIC Feedback Amplifier With > +51-dBm OIP3

IEEE journal of solid-state circuits, 2012-10, Vol.47 (10), p.2316-2326

Kobayashi, K. W.

2012

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From oxides to selenides and sulfides: The richness of the CdI2 type crystallographic structure for thermoelectric properties

Physica status solidi. A, Applications and materials science, 2013-01, Vol.210 (1), p.69-81

2013

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25 Gbaud/s 4-PAM (50 Gbit/s) modulation and 10 km SMF transmission with 1.3 μm InGaAlAs-based DML

Electronics letters, 2014-02, Vol.50 (4), p.299-300

2014

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A Broadband 70-110-GHz E-/W-Band LNA Using a 90-nm T-Gate GaN HEMT Technology

IEEE microwave and wireless components letters, 2021-07, Vol.31 (7), p.885-888

2021

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Advantages of EADFB laser for 25 Gbaud/s 4-PAM (50 Gbit/s) modulation and 10 km single-mode fibre transmission

Electronics letters, 2014-04, Vol.50 (9), p.683-685

2014

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A Ka -Band InP HBT MMIC Power Amplifier With 19.8:1 IP3/Pdc LFOM at 48 GHz

IEEE journal of solid-state circuits, 2023-09, Vol.58 (9), p.2441

2023

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4 x 25.8 Gbit/s (100 Gbit/s) simultaneous operation of InGaAlAs based DML array monolithically integrated with MMI coupler

Electronics letters, 2015-09, Vol.51 (19), p.1516-1517

2015

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Development of Wrist Rehabilitation Device Using Extension Type Flexible Pneumatic Actuators with Simple 3D Coordinate Measuring System

International journal of automotive and mechanical engineering, 2021-12, Vol.18 (4), p.9158-9169

2021

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1.3 μm, 50 Gbit/s electroabsorption modulators integrated with DFB laser for beyond 100G parallel LAN applications

Electronics letters, 2011-06, Vol.47 (12), p.708-710

2011

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Comparison of 5-GHz Quadrature Couplers Using GaAs and Silicon-Based IPD Technologies

IEEE microwave and wireless components letters, 2018-09, Vol.28 (9), p.756-758

2018

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A Cascode Feedback Bias Technique for Linear CMOS Power Amplifiers in a Multistage Cascode Topology

IEEE transactions on microwave theory and techniques, 2013-02, Vol.61 (2), p.890-901

2013

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Baseband to 140-GHz SiGe HBT and 100-GHz InP DHBT Broadband Triple-Stacked Distributed Amplifiers With Active Bias Terminations

IEEE journal of solid-state circuits, 2020-09, Vol.55 (9), p.2336-2344

2020

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Room-temperature ferromagnetism in Sr1-xYxCoO3-δ (0.2 ≤ x ≤ 0.25)

Physical review. B, Condensed matter and materials physics, 2005-09, Vol.72 (10), p.104408.1-104408.5

2005

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Intrinsic rapid Na+ intercalation observed in NaxCoO2 thin film

AIP advances, 2013-03, Vol.3 (3), p.032104-032104

2013

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25 Gbit/s 1.3 μm InGaAlAs-based electroabsorption modulator integrated with DFB laser for metro-area (40 km) 100 Gbit/s Ethernet system

Electronics letters, 2009-08, Vol.45 (17), p.900-902

2009

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50 Gbit/s uncooled operation (5―85°C) of 1.3 μm electroabsorption modulator integrated with DFB laser

Electronics letters, 2013-01, Vol.49 (3), p.204-205

2013

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Thermal Conductivity and Dimensionless Figure of Merit of Thermoelectric Rhodium Oxides Measured by a Modified Harman Method

Journal of electronic materials, 2009-07, Vol.38 (7), p.964-967

2009

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A Cool, Sub-0.2 dB Noise Figure GaN HEMT Power Amplifier With 2-Watt Output Power

IEEE journal of solid-state circuits, 2009-10, Vol.44 (10), p.2648-2654

2009

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Structure-related transport properties of A-site ordered perovskite Sr3ErMn4-xGaxO10.5-d

Journal of magnetism and magnetic materials, 2010-02, Vol.322 (3), p.353-356

2010

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Performance improvement of 1.3 μm InAlGaAs MQW modulators grown by MOVPE using C-doped InAl(Ga)As cladding layers

Journal of crystal growth, 2024-10, Vol.643, p.127813, Article 127813

2024

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A Trial Thermal Rectifier

Journal of electronic materials, 2010-09, Vol.39 (9), p.1488-1492

2010

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Wide Temperature Range Operation of a 1.55-$\mu$m 40-Gb/s Electroabsorption Modulator Integrated DFB Laser for Very Short-Reach Applications

IEEE photonics technology letters, 2009-09, Vol.21 (18), p.1317-1319

2009

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Reflectivity in femtosecond-laser-induced structural changes of diamond-like carbon film

Applied physics. A, Materials science & processing, 2005, Vol.80 (1), p.17-21

2005

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Uncooled (25-85°C) 10 Gbit/s operation of 1.3 μm-range metamorphic Fabry-Perot laser on GaAs substrate

Electronics letters, 2009-03, Vol.45 (7), p.359-360

2009

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Linear Voltage Controlled Variable Resistor Using Body Potential in SOI process

IEEE microwave and wireless components letters, 2016-10, Vol.26 (10), p.816-818

2016

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An 8-W 250-MHz to 3-GHz Decade-Bandwidth Low-Noise GaN MMIC Feedback Amplifier With > +51-dBm OIP3

From oxides to selenides and sulfides: The richness of the CdI2 type crystallographic structure for thermoelectric properties

25 Gbaud/s 4-PAM (50 Gbit/s) modulation and 10 km SMF transmission with 1.3 μm InGaAlAs-based DML

A Broadband 70-110-GHz E-/W-Band LNA Using a 90-nm T-Gate GaN HEMT Technology

Advantages of EADFB laser for 25 Gbaud/s 4-PAM (50 Gbit/s) modulation and 10 km single-mode fibre transmission

A Ka -Band InP HBT MMIC Power Amplifier With 19.8:1 IP3/Pdc LFOM at 48 GHz

4 x 25.8 Gbit/s (100 Gbit/s) simultaneous operation of InGaAlAs based DML array monolithically integrated with MMI coupler

Development of Wrist Rehabilitation Device Using Extension Type Flexible Pneumatic Actuators with Simple 3D Coordinate Measuring System

1.3 μm, 50 Gbit/s electroabsorption modulators integrated with DFB laser for beyond 100G parallel LAN applications

Comparison of 5-GHz Quadrature Couplers Using GaAs and Silicon-Based IPD Technologies

A Cascode Feedback Bias Technique for Linear CMOS Power Amplifiers in a Multistage Cascode Topology

Baseband to 140-GHz SiGe HBT and 100-GHz InP DHBT Broadband Triple-Stacked Distributed Amplifiers With Active Bias Terminations

Room-temperature ferromagnetism in Sr1-xYxCoO3-δ (0.2 ≤ x ≤ 0.25)

Intrinsic rapid Na+ intercalation observed in NaxCoO2 thin film

25 Gbit/s 1.3 μm InGaAlAs-based electroabsorption modulator integrated with DFB laser for metro-area (40 km) 100 Gbit/s Ethernet system

50 Gbit/s uncooled operation (5―85°C) of 1.3 μm electroabsorption modulator integrated with DFB laser

Thermal Conductivity and Dimensionless Figure of Merit of Thermoelectric Rhodium Oxides Measured by a Modified Harman Method

A Cool, Sub-0.2 dB Noise Figure GaN HEMT Power Amplifier With 2-Watt Output Power

Structure-related transport properties of A-site ordered perovskite Sr3ErMn4-xGaxO10.5-d

Performance improvement of 1.3 μm InAlGaAs MQW modulators grown by MOVPE using C-doped InAl(Ga)As cladding layers

A Trial Thermal Rectifier

Wide Temperature Range Operation of a 1.55-$\mu$m 40-Gb/s Electroabsorption Modulator Integrated DFB Laser for Very Short-Reach Applications

Reflectivity in femtosecond-laser-induced structural changes of diamond-like carbon film

Uncooled (25-85°C) 10 Gbit/s operation of 1.3 μm-range metamorphic Fabry-Perot laser on GaAs substrate

Linear Voltage Controlled Variable Resistor Using Body Potential in SOI process

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