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Epitaxial growth of thick 4H–SiC layers in a vertical radiant-heating reactor

Journal of crystal growth, 2002-04, Vol.237, p.1206-1212

2002

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Interface states in abrupt SiO2/4H- and 6H-SiC(0001) from first-principles: Effects of Si dangling bonds, C dangling bonds and C clusters

Materials science forum, 2004-01, Vol.457-460, p.1297-1300

2004

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Growth and Electrical Characterization of the Lightly-Doped Thick 4H-SiC Epilayers

Materials science forum, 2002-04, Vol.389-393, p.171-174

2002

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LPCVD Growth and Structural Properties of 4H-SiC Epitaxial Layers

Materials science forum, 2000-05, Vol.338-342, p.145-148

2000

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A Comparative Study of the Electrical Properties of 4H-SiC Epilayers with Continuous and Dissociated Micropipes

Materials science forum, 2002-04, Vol.389-393, p.1137-1140

2002

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Homoepitaxial growth and characterization of thick SiC layers with a reduced micropipe density

MRS proceedings, 2004, Vol.815, Article J2.1

2004

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Micropipe Closing via Thick 4H-SiC Epitaxial Growth Involving Structural Transformation of Screw Dislocations

Materials science forum, 2001-01, Vol.353-356, p.311-314

2001

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Analysis of High Leakage Currents in 4H-SiC Schottky Barrier Diodes Using Optical Beam-Induced Current Measurements

Materials science forum, 2002-04, Vol.389-393, p.1141-1144

2002

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In Situ Analysis of Thermal Oxidation on H-Terminated 4H-SiC Surfaces

Materials science forum, 2002-04, Vol.389-393, p.709-712

2002

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Characterization of 4H-SiC Epilayers Grown at a High Deposition Rate

Materials science forum, 2001-01, Vol.353-356, p.131-134

2001

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Vibrational study on the carbonization of Si surface

Materials science & engineering. B, Solid-state materials for advanced technology, 1999-07, Vol.61, p.531-534

1999

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The Investigation of 4H-SiC/SiO2 Interfaces by Optical and Electrical Measurements

Materials science forum, 2002-04, Vol.389-393, p.1013-1016

2002

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Atomic and electronic structures of heat treated 6H–SiC surface

Applied surface science, 1998-06, Vol.130, p.593-597

1998

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Electroluminescence Analysis of Al+ and B+ Implanted pn Diodes

Materials science forum, 2002-04, Vol.389-393, p.1297-1300

2002

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Photoemission study of 6H-SiC(0001)Si face

Applied surface science, 1997-06, Vol.117, p.794-797

1997

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Improvement in Electrical Performance of Schottky Contacts for High-Voltage Diode

Materials Science Forum, 2005-05, Vol.483-485, p.721-724

2005

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Structural and Electrical Study of 4H-SiC CVD-Grown Layer with Micropipe Dissociation

Diffusion and defect data. Solid state data. Pt. A, Defect and diffusion forum, 2002-01, Vol.206-207, p.111-116

2002

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Growth of thick and low-doped 4H-SiC epitaxial layers in a vertical radiant-heating VPE reactor

Electrical engineering in Japan, 2002-03, Vol.138 (4), p.18-25

2002

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Novel development of an inductively coupled thermal plasma with pulse amplitude modulation of electromagnetic field

Electrical engineering in Japan, 2002-03, Vol.138 (4), p.26-33

2002

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Epitaxial growth of thick 4H–SiC layers in a vertical radiant-heating reactor

Interface states in abrupt SiO2/4H- and 6H-SiC(0001) from first-principles: Effects of Si dangling bonds, C dangling bonds and C clusters

Growth and Electrical Characterization of the Lightly-Doped Thick 4H-SiC Epilayers

LPCVD Growth and Structural Properties of 4H-SiC Epitaxial Layers

A Comparative Study of the Electrical Properties of 4H-SiC Epilayers with Continuous and Dissociated Micropipes

Homoepitaxial growth and characterization of thick SiC layers with a reduced micropipe density

Micropipe Closing via Thick 4H-SiC Epitaxial Growth Involving Structural Transformation of Screw Dislocations

Analysis of High Leakage Currents in 4H-SiC Schottky Barrier Diodes Using Optical Beam-Induced Current Measurements

In Situ Analysis of Thermal Oxidation on H-Terminated 4H-SiC Surfaces

Characterization of 4H-SiC Epilayers Grown at a High Deposition Rate

Vibrational study on the carbonization of Si surface

The Investigation of 4H-SiC/SiO2 Interfaces by Optical and Electrical Measurements

Atomic and electronic structures of heat treated 6H–SiC surface

Electroluminescence Analysis of Al+ and B+ Implanted pn Diodes

Photoemission study of 6H-SiC(0001)Si face

Improvement in Electrical Performance of Schottky Contacts for High-Voltage Diode

Structural and Electrical Study of 4H-SiC CVD-Grown Layer with Micropipe Dissociation

Growth of thick and low-doped 4H-SiC epitaxial layers in a vertical radiant-heating VPE reactor

Novel development of an inductively coupled thermal plasma with pulse amplitude modulation of electromagnetic field

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