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A describing-function based criterion for a route to chaos in autonomous nonlinear systems

International journal of control, 1995-01, Vol.61 (1), p.211-228

1995

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Telehealth Use for Enhancing the Health of Rural Older Adults: A Systematic Mixed Studies Review

The Gerontologist, 2022-11, Vol.62 (10), p.e564-e577

2022

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Feasibility of Rotor Fault Detection from a Fluid Dynamics Perspective

Journal of Applied Fluid Mechanics, 2020-11, Vol.13 (6), p.1743

2020

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Low-temperature Ge and GeSn Chemical Vapor Deposition using Ge2H6

Thin solid films, 2012-02, Vol.520 (8), p.3211-3215

2012

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Electrical properties of high- κ gate dielectrics: Challenges, current issues, and possible solutions

Materials science & engineering. R, Reports : a review journal, 2006-04, Vol.51 (4), p.37-85

2006

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Estimation of high energy steam piping degradation using hybrid recurrent neural networks

The International journal of pressure vessels and piping, 2020-09, Vol.186, p.104127, Article 104127

2020

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Dominant Layer for Stress-Induced Positive Charges in Hf-Based Gate Stacks

IEEE electron device letters, 2008-12, Vol.29 (12), p.1360-1363

2008

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Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance

Journal of the Electrochemical Society, 2008, Vol.155 (7), p.H552

2008

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Tri-state logic using vertically integrated Si-SiGe resonant interband tunneling diodes with double NDR

IEEE electron device letters, 2004-09, Vol.25 (9), p.646-648

2004

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Estimation of fixed charge densities in hafnium-silicate gate dielectrics

IEEE transactions on electron devices, 2006-10, Vol.53 (10), p.2627-2633

2006

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HfO2 as gate dielectric on Ge: Interfaces and deposition techniques

Materials science & engineering. B, Solid-state materials for advanced technology, 2006-12, Vol.135 (3), p.256-260

2006

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Electrical characteristics of Ge/GeOx(N)/HfO2 gate stacks

Journal of non-crystalline solids, 2005-07, Vol.351 (21-23), p.1902-1905

2005

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Silica Formation during Etching of Silicon Nitride in Phosphoric Acid

Solid state phenomena, 2016-09, Vol.255, p.285-290

2016

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Nanoscale domain wall devices with magnetic tunnel junction read and write

Nature electronics, 2021-06, Vol.4 (6), p.392-398

2021

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Electrical characterization of CNT contacts with Cu Damascene top contact

Microelectronic engineering, 2013-06, Vol.106, p.106-111

2013

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A Study of Relaxation Current in High- $kappa$ Dielectric Stacks

IEEE transactions on electron devices, 2004-03, Vol.51 (3), p.402-408

2004

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Deep Trench Isolation and through Silicon via Wetting Characterization by High-Frequency Acoustic Reflectometry

Solid state phenomena, 2016, Vol.255, p.129-135

2016

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Molecular beam epitaxy passivation studies of Ge and III–V semiconductors for advanced CMOS

Microelectronic engineering, 2009-07, Vol.86 (7), p.1592-1595

2009

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Advanced Cryogenic Aerosol Cleaning: Small Particle Removal and Damage-Free Performance

Solid state phenomena, 2016-01, Vol.255, p.195-200

2016

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Half-threshold bias Ioff reduction down to nA range of thermally and electrically stable high-performance integrated OTS selector, obtained by Se enrichment and N-doping of thin GeSe layers

2018 IEEE Symposium on VLSI Technology, 2018, p.209-210

2018

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Nitrogen Incorporation in HfSiO(N)/TaN Gate Stacks: Impact on Performances and NBTI

IEEE electron device letters, 2007-07, Vol.28 (7), p.613-615

2007

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Stress-Induced Positive Charge in Hf-Based Gate Dielectrics: Impact on Device Performance and a Framework for the Defect

IEEE transactions on electron devices, 2008-07, Vol.55 (7), p.1647-1656

2008

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H2S molecular beam passivation of Ge(0 0 1)

Microelectronic engineering, 2011-04, Vol.88 (4), p.399-402

2011

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Spin Transport in Ge Nanowires for Diluted Magnetic Semiconductor-Based Nonvolatile Transpinor

ECS transactions, 2014, Vol.64 (6), p.613-623

2014

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Determination of tunnelling parameters in ultra-thin oxide layer poly-Si/SiO2/Si structures

Solid-state electronics, 1995-08, Vol.38 (8), p.1465-1471

1995

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A describing-function based criterion for a route to chaos in autonomous nonlinear systems

Telehealth Use for Enhancing the Health of Rural Older Adults: A Systematic Mixed Studies Review

Feasibility of Rotor Fault Detection from a Fluid Dynamics Perspective

Low-temperature Ge and GeSn Chemical Vapor Deposition using Ge2H6

Electrical properties of high- κ gate dielectrics: Challenges, current issues, and possible solutions

Estimation of high energy steam piping degradation using hybrid recurrent neural networks

Dominant Layer for Stress-Induced Positive Charges in Hf-Based Gate Stacks

Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance

Tri-state logic using vertically integrated Si-SiGe resonant interband tunneling diodes with double NDR

Estimation of fixed charge densities in hafnium-silicate gate dielectrics

HfO2 as gate dielectric on Ge: Interfaces and deposition techniques

Electrical characteristics of Ge/GeOx(N)/HfO2 gate stacks

Silica Formation during Etching of Silicon Nitride in Phosphoric Acid

Nanoscale domain wall devices with magnetic tunnel junction read and write

Electrical characterization of CNT contacts with Cu Damascene top contact

A Study of Relaxation Current in High- $kappa$ Dielectric Stacks

Deep Trench Isolation and through Silicon via Wetting Characterization by High-Frequency Acoustic Reflectometry

Molecular beam epitaxy passivation studies of Ge and III–V semiconductors for advanced CMOS

Advanced Cryogenic Aerosol Cleaning: Small Particle Removal and Damage-Free Performance

Half-threshold bias Ioff reduction down to nA range of thermally and electrically stable high-performance integrated OTS selector, obtained by Se enrichment and N-doping of thin GeSe layers

Nitrogen Incorporation in HfSiO(N)/TaN Gate Stacks: Impact on Performances and NBTI

Stress-Induced Positive Charge in Hf-Based Gate Dielectrics: Impact on Device Performance and a Framework for the Defect

H2S molecular beam passivation of Ge(0 0 1)

Spin Transport in Ge Nanowires for Diluted Magnetic Semiconductor-Based Nonvolatile Transpinor

Determination of tunnelling parameters in ultra-thin oxide layer poly-Si/SiO2/Si structures

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