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Effect of Proton Irradiation on Complementary Metal Oxide Semiconductor (CMOS) Single-Photon Avalanche Diodes

Electronics (Basel), 2024-01, Vol.13 (1), p.224

2024

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Analysis of Difference in Areal Density Aluminum Equivalent Method in Ionizing Total Dose Shielding Analysis of Semiconductor Devices

Electronics (Basel), 2023-10, Vol.12 (19), p.4181

2023

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Temperature-Switching During Irradiation as a Test for ELDRS in Linear Bipolar Devices

IEEE transactions on nuclear science, 2019-01, Vol.66 (1), p.199-206

2019

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Effect of Trapped Charge Induced by Total Ionizing Dose Radiation on the Top-Gate Carbon Nanotube Field Effect Transistors

Electronics (Basel), 2023-02, Vol.12 (4), p.1000

2023

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High tolerance of proton irradiation of Ge2Sb2Te5 phase change material

Journal of alloys and compounds, 2013-10, Vol.575, p.229-232

2013

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Fabrication and OSL properties of Eu3+-doped NaCaPO4 glass-ceramics

Materials letters, 2020-02, Vol.261, p.126973, Article 126973

2020

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Influence of channel length and layout on TID for 0.18 μm NMOS transistors

核技术（英文版）, 2013-12, Vol.24 (6), p.17-22

WU Xue LU Wu WANG Xin GUO Qi HE ,Chengfa LI Yudong XI Shanbir SUN Jing WEN Lin

2013

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Fabrication and optical properties of Tb3+‐doped NaCaPO4 glass‐ceramics and their radiation detection applications

Journal of the American Ceramic Society, 2020-05, Vol.103 (5), p.3138-3146

2020

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Impact of TID on Within-Wafer Variability of Radiation-Hardened SOI Wafers

IEEE transactions on nuclear science, 2021-07, Vol.68 (7), p.1423-1429

2021

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IEEE_Xplore

Measurement and Evaluation of the Within-Wafer TID Response Variability on BOX Layer of SOI Technology

IEEE transactions on nuclear science, 2021-10, Vol.68 (10), p.2516-2523

2021

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IEEE_Xplore

Effects of recording time and residue on dose-response by LiMgPO4: Tb, B ceramic disc synthesized via improved sintering process

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2018-05, Vol.422, p.12-17

2018

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Total Ionizing Dose Responses of Forward Body Bias Ultra-Thin Body and Buried Oxide FD-SOI Transistors

IEEE transactions on nuclear science, 2019-04, Vol.66 (4), p.702-709

2019

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IEEE_Xplore

The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose

IEEE transactions on nuclear science, 2018-08, Vol.65 (8), p.1920-1927

2018

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IEEE_Xplore

Using a Temperature-Switching Approach to Evaluate Low-Dose-Rate Ionizing Radiation Effects on SET in Linear Bipolar Circuits

IEEE transactions on nuclear science, 2019-07, Vol.66 (7), p.1557-1565

2019

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IEEE_Xplore

Read Static Noise Margin Decrease of 65-nm 6-T SRAM Cell Induced by Total Ionizing Dose

IEEE transactions on nuclear science, 2018-02, Vol.65 (2), p.691-697

2018

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IEEE_Xplore

Total Ionizing Dose Influence on the Single-Event Multiple-Cell Upsets in 65-nm 6-T SRAM

IEEE transactions on nuclear science, 2019-06, Vol.66 (6), p.892-898

2019

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IEEE_Xplore

Using temperature-switching approach to evaluate the ELDRS of bipolar devices

Radiation effects and defects in solids, 2017-12, Vol.172 (11-12), p.824-834

2017

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Synergistic effect of enhanced low-dose-rate sensitivity and single event transient in bipolar voltage comparator LM139

Journal of nuclear science and technology, 2019-02, Vol.56 (2), p.172-178

2019

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A CaS：Ce,Sm-based dosimeter for online dosimetry measurement

Nuclear science and techniques, 2011-04, Vol.22 (2), p.84-88

SUN Yurun CHEN Zhaoyang FAN Yanwei YAN Shiyou HE Chengfa

2011

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Use of temperature-switching approach to evaluate the ELDRS of bipolar devices

2016 16th European Conference on Radiation and Its Effects on Components and Systems (RADECS), 2016, p.1-5

2016

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IEEE_Xplore

Modifications to a universal electronic stopping power equation for ions

Radiation effects and defects in solids, 2004-02, Vol.159 (2), p.81-86

2004

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Enhanced Low Dose Rate Sensitivity of PNP Transistor at Extreme-Low Dose Rates

2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS), 2018, p.1-5

2018

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Liquid Mixing Based on Electrokinetic Vortices Generated in a T-Type Microchannel

Micromachines (Basel), 2021-01, Vol.12 (2), p.130

Wang, Chengfa

2021

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Real-time Precise Point Positioning with a Xiaomi MI 8 Android Smartphone

Sensors (Basel, Switzerland), 2019-06, Vol.19 (12), p.2835

2019

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Electromagnetohydrodynamic flow in a rectangular microchannel

Sensors and actuators. B, Chemical, 2018-06, Vol.263, p.643-660

2018

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Effect of Proton Irradiation on Complementary Metal Oxide Semiconductor (CMOS) Single-Photon Avalanche Diodes

Analysis of Difference in Areal Density Aluminum Equivalent Method in Ionizing Total Dose Shielding Analysis of Semiconductor Devices

Temperature-Switching During Irradiation as a Test for ELDRS in Linear Bipolar Devices

Effect of Trapped Charge Induced by Total Ionizing Dose Radiation on the Top-Gate Carbon Nanotube Field Effect Transistors

High tolerance of proton irradiation of Ge2Sb2Te5 phase change material

Fabrication and OSL properties of Eu3+-doped NaCaPO4 glass-ceramics

Influence of channel length and layout on TID for 0.18 μm NMOS transistors

Fabrication and optical properties of Tb3+‐doped NaCaPO4 glass‐ceramics and their radiation detection applications

Impact of TID on Within-Wafer Variability of Radiation-Hardened SOI Wafers

Measurement and Evaluation of the Within-Wafer TID Response Variability on BOX Layer of SOI Technology

Effects of recording time and residue on dose-response by LiMgPO4: Tb, B ceramic disc synthesized via improved sintering process

Total Ionizing Dose Responses of Forward Body Bias Ultra-Thin Body and Buried Oxide FD-SOI Transistors

The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose

Using a Temperature-Switching Approach to Evaluate Low-Dose-Rate Ionizing Radiation Effects on SET in Linear Bipolar Circuits

Read Static Noise Margin Decrease of 65-nm 6-T SRAM Cell Induced by Total Ionizing Dose

Total Ionizing Dose Influence on the Single-Event Multiple-Cell Upsets in 65-nm 6-T SRAM

Using temperature-switching approach to evaluate the ELDRS of bipolar devices

Synergistic effect of enhanced low-dose-rate sensitivity and single event transient in bipolar voltage comparator LM139

A CaS：Ce,Sm-based dosimeter for online dosimetry measurement

Use of temperature-switching approach to evaluate the ELDRS of bipolar devices

Modifications to a universal electronic stopping power equation for ions

Enhanced Low Dose Rate Sensitivity of PNP Transistor at Extreme-Low Dose Rates

Liquid Mixing Based on Electrokinetic Vortices Generated in a T-Type Microchannel

Real-time Precise Point Positioning with a Xiaomi MI 8 Android Smartphone

Electromagnetohydrodynamic flow in a rectangular microchannel

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