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Characteristic enhancement of the blue LED chip by the growth and fabrication on patterned sapphire (0 0 0 1) substrate

Journal of crystal growth, 2010, Vol.312 (2), p.258-262

2010

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Photoluminescence enhancement by localized surface plasmons in AlGaN/GaN/AlGaN double heterostructures

Physica status solidi. PSS-RRL. Rapid research letters, 2015-10, Vol.9 (10), p.575-579

2015

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Efficiency enhancement of CIGS compound solar cell fabricated using homomorphic thin Cr2O3 diffusion barrier formed on stainless steel substrate

Applied surface science, 2016-12, Vol.389, p.645-650

2016

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In-situ observation in a scanning electron microscope on the exfoliation behavior of galvannealed Zn–Fe coating layers

Surface & coatings technology, 2007-04, Vol.201 (14), p.6261-6266

2007

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Low-temperature synthesis of ZnO quantum dots for photocatalytic degradation of methyl orange dye under UV irradiation

Ceramics international, 2014-11, Vol.40 (9), p.14827-14831

2014

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Laterally overgrown GaN/InGaN multi-quantum well heterostructures: Electrical and optical properties

Physica status solidi. A, Applications and materials science, 2010-06, Vol.207 (6), p.1383-1385

2010

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Morphology and crystal quality investigation of hydrothermally synthesized ZnO micro-rods

Materials research bulletin, 2008-08, Vol.43 (8), p.2060-2068

2008

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Multi-wavelength emitting InGan/GaN quantum well grown on V-shaped gan(1101) microfacet

Journal of nanoscience and nanotechnology, 2007-11, Vol.7 (11), p.4053

2007

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Characteristics of GaN/Si(1 1 1) epitaxy grown using Al0.1Ga0.9N/AlN composite nucleation layers having different thicknesses of AlN

Journal of crystal growth, 2002-06, Vol.241 (3), p.289-296

2002

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Evaluation of mechanical properties under a temperature gradient field

Measurement science & technology, 2001-11, Vol.12 (11), p.1881-1885

2001

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Doping characteristics of Al0.15Ga0.85N epilayers with various Mg incorporations

Journal of crystal growth, 2003-08, Vol.256 (1-2), p.56-62

2003

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The effect of p-GaN : Mg layers on the turn-on voltage of p–n junction LED

Journal of crystal growth, 2001, Vol.222 (3), p.459-464

2001

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The influences of AlxGa1-xN layer on the characteristics of UV LED structure

Journal of crystal growth, 2001-06, Vol.226 (2-3), p.215-222

2001

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Characteristic enhancement of the blue LED chip by the growth and fabrication on patterned sapphire (0 0 0 1) substrate

Photoluminescence enhancement by localized surface plasmons in AlGaN/GaN/AlGaN double heterostructures

Efficiency enhancement of CIGS compound solar cell fabricated using homomorphic thin Cr2O3 diffusion barrier formed on stainless steel substrate

In-situ observation in a scanning electron microscope on the exfoliation behavior of galvannealed Zn–Fe coating layers

Low-temperature synthesis of ZnO quantum dots for photocatalytic degradation of methyl orange dye under UV irradiation

Laterally overgrown GaN/InGaN multi-quantum well heterostructures: Electrical and optical properties

Morphology and crystal quality investigation of hydrothermally synthesized ZnO micro-rods

Multi-wavelength emitting InGan/GaN quantum well grown on V-shaped gan(1101) microfacet

Characteristics of GaN/Si(1 1 1) epitaxy grown using Al0.1Ga0.9N/AlN composite nucleation layers having different thicknesses of AlN

Evaluation of mechanical properties under a temperature gradient field

Doping characteristics of Al0.15Ga0.85N epilayers with various Mg incorporations

The effect of p-GaN : Mg layers on the turn-on voltage of p–n junction LED

The influences of AlxGa1-xN layer on the characteristics of UV LED structure

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