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In-situ etch-depth control better than 5 nm with reflectance anisotropy spectroscopy (RAS) equipment during reactive ion etching (RIE): A technical RAS application

AIP advances, 2019-07, Vol.9 (7), p.075116-075116-6

2019

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Theory, simulation, fabrication, and characterization of Galois scattering plates for the optical and the THz spectral range

AIP advances, 2021-06, Vol.11 (6), p.065130-065130-10

2021

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Reactive Ion Etching (RIE) Induced Surface Roughness Precisely Monitored In-Situ and in Real Time by Reflectance Anisotropy Spectroscopy (RAS) in Combination with Principle Component Analysis (PCA)

Advances in materials science and engineering, 2022, Vol.2022, p.1-7

2022

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Doped or Quantum-Dot Layers as In Situ Etch-Stop Indicators for III/V Semiconductor Reactive Ion Etching (RIE) Using Reflectance Anisotropy Spectroscopy (RAS)

Micromachines (Basel), 2021-04, Vol.12 (5), p.502

2021

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Epitaxial Growth of Optoelectronically Active Ga(As)Sb Quantum Dots on Al-Rich AlGaAs with GaAs Capsule Layers

Advances in materials science and engineering, 2021, Vol.2021 (1)

2021

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Combination of Transverse Mode Selection and Active Longitudinal Mode-Locking of Broad Area Semiconductor Lasers

Advances in OptoElectronics (Hindawi), 2014-01, Vol.2014 (2014), p.1-5

2014

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Precise in situ etch depth control of multilayered III-V semiconductor samples with reflectance anisotropy spectroscopy (RAS) equipment

Beilstein journal of nanotechnology, 2016, Vol.7 (1), p.1783-1793

2016

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Deep wet etching of fused silica glass for hollow capillary optical leaky waveguides in microfluidic devices

Journal of micromechanics and microengineering, 2001-05, Vol.11 (3), p.257-262

2001

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Fundamental Transverse Mode Selection (TMS#0) of Broad Area Semiconductor Lasers with Integrated Twice-Retracted 4f Set-Up and Film-Waveguide Lens

Advances in OptoElectronics (Hindawi), 2017-01, Vol.2017

2017

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Reflectance anisotropy spectroscopy (RAS) for in-situ identification of roughness morphologies evolving during reactive ion etching (RIE)

Applied surface science, 2023-02, Vol.611, p.155769, Article 155769

2023

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Optoelectrowetting (OEW) with push-actuation of microdroplets at small frequencies and OEW equations revisited

Sensors and actuators. A. Physical., 2022-02, Vol.334, p.113331, Article 113331

2022

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Dense lying self-organized GaAsSb quantum dots on GaAs for efficient lasers

Beilstein journal of nanotechnology, 2011-06, Vol.2 (1), p.333-338

2011

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High shape-accuracy of surface roughnesses upon nano-moulding with optical elastomers

Optical materials, 2021-08, Vol.118, p.111230, Article 111230

2021

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Glass surface modification by lithography-free reactive ion etching in an Ar/CF4-plasma for controlled diffuse optical scattering

Surface & coatings technology, 2011-07, Vol.205, p.S419-S424

2011

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Evanescent-field fiber sensor for the water content in lubricating oils with sensitivity increase by dielectrophoresis

Sensors and actuators. A. Physical., 2012-09, Vol.184, p.93-97

2012

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Monitoring of (reactive) ion etching (RIE) with reflectance anisotropy spectroscopy (RAS) equipment

Applied surface science, 2015-02, Vol.328, p.120-124

2015

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Microfluidic Droplet Array as Optical Irises Actuated via Electrowetting

Advances in OptoElectronics (Hindawi), 2018-01, Vol.2018, p.1-8

2018

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Influence of plasma composition on reflectance anisotropy spectra for in situ III–V semiconductor dry-etch monitoring

Applied surface science, 2015-12, Vol.357, p.530-538

2015

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Compact dynamic microfluidic iris for active optics

Microelectronic engineering, 2011-08, Vol.88 (8), p.1772-1774

2011

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Dependence of the fused-silica etch rate on the etch mask opening diameter

Microelectronic engineering, 2013-12, Vol.112, p.10-13

2013

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1D Confocal Broad Area Semiconductor Lasers (Confocal BALs) for Fundamental Transverse Mode Selection (TMS#0)

Advances in OptoElectronics (Hindawi), 2019-01, Vol.2019, p.1-7

2019

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GaSb quantum dots on GaAs with high localization energy of 710 meV and an emission wavelength of 1.3 μm

Journal of crystal growth, 2014-10, Vol.404, p.48-53

2014

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1 ML Wetting Layer upon Ga(As)Sb Quantum Dot (QD) Formation on GaAs Substrate Monitored with Reflectance Anisotropy Spectroscopy (RAS)

Advances in OptoElectronics (Hindawi), 2018-01, Vol.2018, p.1-7

2018

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Deep fused silica wet etching using an Au-free and stress-reduced sputter-deposited Cr hard mask

Journal of micromechanics and microengineering, 2005-11, Vol.15 (11), p.2130-2135

2005

Volltextzugriff (PDF)

Generation of Dense Lying Ga(As)Sb Quantum Dots for Efficient Quantum Dot Lasers

Advanced materials research, 2013, Vol.684, p.285-289

2013

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In-situ etch-depth control better than 5 nm with reflectance anisotropy spectroscopy (RAS) equipment during reactive ion etching (RIE): A technical RAS application

Theory, simulation, fabrication, and characterization of Galois scattering plates for the optical and the THz spectral range

Reactive Ion Etching (RIE) Induced Surface Roughness Precisely Monitored In-Situ and in Real Time by Reflectance Anisotropy Spectroscopy (RAS) in Combination with Principle Component Analysis (PCA)

Doped or Quantum-Dot Layers as In Situ Etch-Stop Indicators for III/V Semiconductor Reactive Ion Etching (RIE) Using Reflectance Anisotropy Spectroscopy (RAS)

Epitaxial Growth of Optoelectronically Active Ga(As)Sb Quantum Dots on Al-Rich AlGaAs with GaAs Capsule Layers

Combination of Transverse Mode Selection and Active Longitudinal Mode-Locking of Broad Area Semiconductor Lasers

Precise in situ etch depth control of multilayered III-V semiconductor samples with reflectance anisotropy spectroscopy (RAS) equipment

Deep wet etching of fused silica glass for hollow capillary optical leaky waveguides in microfluidic devices

Fundamental Transverse Mode Selection (TMS#0) of Broad Area Semiconductor Lasers with Integrated Twice-Retracted 4f Set-Up and Film-Waveguide Lens

Reflectance anisotropy spectroscopy (RAS) for in-situ identification of roughness morphologies evolving during reactive ion etching (RIE)

Optoelectrowetting (OEW) with push-actuation of microdroplets at small frequencies and OEW equations revisited

Dense lying self-organized GaAsSb quantum dots on GaAs for efficient lasers

High shape-accuracy of surface roughnesses upon nano-moulding with optical elastomers

Glass surface modification by lithography-free reactive ion etching in an Ar/CF4-plasma for controlled diffuse optical scattering

Evanescent-field fiber sensor for the water content in lubricating oils with sensitivity increase by dielectrophoresis

Monitoring of (reactive) ion etching (RIE) with reflectance anisotropy spectroscopy (RAS) equipment

Microfluidic Droplet Array as Optical Irises Actuated via Electrowetting

Influence of plasma composition on reflectance anisotropy spectra for in situ III–V semiconductor dry-etch monitoring

Compact dynamic microfluidic iris for active optics

Dependence of the fused-silica etch rate on the etch mask opening diameter

1D Confocal Broad Area Semiconductor Lasers (Confocal BALs) for Fundamental Transverse Mode Selection (TMS#0)

GaSb quantum dots on GaAs with high localization energy of 710 meV and an emission wavelength of 1.3 μm

1 ML Wetting Layer upon Ga(As)Sb Quantum Dot (QD) Formation on GaAs Substrate Monitored with Reflectance Anisotropy Spectroscopy (RAS)

Deep fused silica wet etching using an Au-free and stress-reduced sputter-deposited Cr hard mask

Generation of Dense Lying Ga(As)Sb Quantum Dots for Efficient Quantum Dot Lasers

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