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Carbon Nanodots as Electron Transport Materials in Organic Light Emitting Diodes and Solar Cells

Nanomaterials (Basel, Switzerland), 2022-12, Vol.13 (1), p.169

2022

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Noise investigation in a spin-based four-qubit GaAs block of self-assembled quantum dots

AIP advances, 2021-06, Vol.11 (6), p.065126-065126-8

2021

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Correlation of Charge Buildup and Stress-Induced Leakage Current in Cerium Oxide Films Grown on Ge (100) Substrates

IEEE transactions on electron devices, 2009-03, Vol.56 (3), p.399-407

2009

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Suppressing the Photocatalytic Activity of Zinc Oxide Electron-Transport Layer in Nonfullerene Organic Solar Cells with a Pyrene-Bodipy Interlayer

ACS applied materials & interfaces, 2020-05, Vol.12 (19), p.21961-21973

2020

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The Role of Interface Defect States in n‐ and p‐Type Ge Metal–Ferroelectric–Semiconductor Structures with Hf0.5Zr0.5O2 Ferroelectric

Physica status solidi. A, Applications and materials science, 2021-02, Vol.218 (4), p.n/a

2021

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Electrical characterization of the SiON/Si interface for applications on optical and MOS devices

Semiconductor science and technology, 2003-01, Vol.18 (1), p.56-59

2003

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Engineering of Porphyrin Molecules for Use as Effective Cathode Interfacial Modifiers in Organic Solar Cells of Enhanced Efficiency and Stability

ACS applied materials & interfaces, 2018-06, Vol.10 (24), p.20728-20739

2018

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Germanium metal-insulator-semiconductor capacitors with rare earth La2O3 gate dielectric

Microelectronic engineering, 2007-09, Vol.84 (9-10), p.2324-2327

2007

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Interface engineering for Ge metal-oxide–semiconductor devices

Thin solid films, 2007-06, Vol.515 (16), p.6337-6343

2007

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Dielectric Relaxation and Charge Trapping Characteristics Study in Germanium Based MOS Devices With HfO2/Dy2O3 Gate Stacks

IEEE transactions on electron devices, 2011-10, Vol.58 (10), p.3549-3558

2011

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Electrical properties of SrTiO3 thin films on Si deposited by magnetron sputtering at low temperature

Applied physics letters, 2001-09, Vol.79 (10), p.1513-1515

2001

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Dielectric properties of CVD grown SiON thin films on Si for MOS microelectronic devices

Semiconductor science and technology, 2004-01, Vol.19 (1), p.50-53

2004

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Dielectric properties and electronic transitions of porous and nanostructured cerium oxide films

Materials science & engineering. B, Solid-state materials for advanced technology, 2004-06, Vol.109 (1-3), p.69-73

2004

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Short minority carrier response time in HfO2 /Ge metal-insulator-semiconductor capacitors

Microelectronic engineering, 2005-06, Vol.80, p.34-37

2005

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Electrical characterisation of SrTiO3/Si interfaces

Journal of non-crystalline solids, 2002-05, Vol.303 (1), p.185-189

2002

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Structural and electrical properties of HfO2/Dy2O3 gate stacks on Ge substrates

Thin solid films, 2010-05, Vol.518 (14), p.3964-3971

2010

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An electrical, optical and electron paramagnetic resonance study of room temperature deposited CNx films on Si

Thin solid films, 2005-06, Vol.482 (1-2), p.270-274

2005

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Rare earth oxides as high-k dielectrics for Ge based MOS devices: An electrical study of Pt/Gd2O3/Ge capacitors

Solid-state electronics, 2007-01, Vol.51 (1), p.164-169

2007

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Characterization of physical and electrical properties of BaTiO3 films deposited on p-Si by modified polymeric precursors

Journal of electronic materials, 2005-09, Vol.34 (9), p.1259-1263

2005

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SILC decay in La2O3 gate dielectrics grown on Ge substrates subjected to constant voltage stress

Solid-state electronics, 2010-09, Vol.54 (9), p.979-984

2010

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Post deposition annealing studies of lanthanum aluminate and ceria high- k dielectrics on germanium

Microelectronics and reliability, 2007-04, Vol.47 (4), p.532-535

2007

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Study of stress-induced leakage current (SILC) in HfO2/Dy2O3 high-κ gate stacks on germanium

Microelectronics and reliability, 2009-01, Vol.49 (1), p.26-31

2009

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Characterisation of the BaTiO3/p-Si interface and applications

Applied surface science, 2000-10, Vol.166 (1-4), p.504-507

2000

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Memory performance of MOS structure embedded with laser annealed gold NCs

Solid-state electronics, 2018-10, Vol.148, p.63-69

2018

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Temperature dependence of the barrier at the tetrahedral amorphous carbon-silicon interface

Semiconductor science and technology, 2001-06, Vol.16 (6), p.474-477

2001

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Carbon Nanodots as Electron Transport Materials in Organic Light Emitting Diodes and Solar Cells

Noise investigation in a spin-based four-qubit GaAs block of self-assembled quantum dots

Correlation of Charge Buildup and Stress-Induced Leakage Current in Cerium Oxide Films Grown on Ge (100) Substrates

Suppressing the Photocatalytic Activity of Zinc Oxide Electron-Transport Layer in Nonfullerene Organic Solar Cells with a Pyrene-Bodipy Interlayer

The Role of Interface Defect States in n‐ and p‐Type Ge Metal–Ferroelectric–Semiconductor Structures with Hf0.5Zr0.5O2 Ferroelectric

Electrical characterization of the SiON/Si interface for applications on optical and MOS devices

Engineering of Porphyrin Molecules for Use as Effective Cathode Interfacial Modifiers in Organic Solar Cells of Enhanced Efficiency and Stability

Germanium metal-insulator-semiconductor capacitors with rare earth La2O3 gate dielectric

Interface engineering for Ge metal-oxide–semiconductor devices

Dielectric Relaxation and Charge Trapping Characteristics Study in Germanium Based MOS Devices With HfO2/Dy2O3 Gate Stacks

Electrical properties of SrTiO3 thin films on Si deposited by magnetron sputtering at low temperature

Dielectric properties of CVD grown SiON thin films on Si for MOS microelectronic devices

Dielectric properties and electronic transitions of porous and nanostructured cerium oxide films

Short minority carrier response time in HfO2 /Ge metal-insulator-semiconductor capacitors

Electrical characterisation of SrTiO3/Si interfaces

Structural and electrical properties of HfO2/Dy2O3 gate stacks on Ge substrates

An electrical, optical and electron paramagnetic resonance study of room temperature deposited CNx films on Si

Rare earth oxides as high-k dielectrics for Ge based MOS devices: An electrical study of Pt/Gd2O3/Ge capacitors

Characterization of physical and electrical properties of BaTiO3 films deposited on p-Si by modified polymeric precursors

SILC decay in La2O3 gate dielectrics grown on Ge substrates subjected to constant voltage stress

Post deposition annealing studies of lanthanum aluminate and ceria high- k dielectrics on germanium

Study of stress-induced leakage current (SILC) in HfO2/Dy2O3 high-κ gate stacks on germanium

Characterisation of the BaTiO3/p-Si interface and applications

Memory performance of MOS structure embedded with laser annealed gold NCs

Temperature dependence of the barrier at the tetrahedral amorphous carbon-silicon interface

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