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Head growth in fetuses with isolated congenital heart defects: lack of influence of aortic arch flow and ascending aorta oxygen saturation

Ultrasound in obstetrics & gynecology, 2016-09, Vol.48 (3), p.357-364

2016

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Fetal myocardial deformation measured with two‐dimensional speckle‐tracking echocardiography: longitudinal prospective cohort study of 124 healthy fetuses

Ultrasound in obstetrics & gynecology, 2022-05, Vol.59 (5), p.651-659

2022

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Cardiac function in trisomy 21 fetuses

Ultrasound in obstetrics & gynecology, 2011-02, Vol.37 (2), p.163-171

2011

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Fetal cardiac function between 11 and 35 weeks' gestation and nuchal translucency thickness

Ultrasound in obstetrics & gynecology, 2011-01, Vol.37 (1), p.48-56

2011

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Growth patterns and cerebroplacental hemodynamics in fetuses with congenital heart disease

Ultrasound in obstetrics & gynecology, 2019-06, Vol.53 (6), p.769-778

2019

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Prenatal detection of transposition of the great arteries reduces mortality and morbidity

Ultrasound in obstetrics & gynecology, 2015-03, Vol.45 (3), p.320-325

2015

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Prenatal diagnosis of congenital heart defects: accuracy and discrepancies in a multicenter cohort

Ultrasound in obstetrics & gynecology, 2016-05, Vol.47 (5), p.616-622

2016

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Fetal premature atrial contractions: natural course, risk factors and adverse outcome

Ultrasound in obstetrics & gynecology, 2024-05, Vol.63 (5), p.650-657

2024

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Implications of fetal premature atrial contractions: systematic review

Ultrasound in obstetrics & gynecology, 2022-12, Vol.60 (6), p.721-730

2022

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Raman scattering in large single indium nitride dots: Correlation between morphology and strain

Physical review. B, Condensed matter, 2003-12, Vol.68 (24), Article 245308

2003

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MOVPE growth and characterization of AlxGa1-xN

Materials science & engineering. B, Solid-state materials for advanced technology, 1997-12, Vol.50 (1-3), p.219-222

1997

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Characterization of ALN buffer layers on (0 0 0 1)-sapphire substrates

Journal of crystal growth, 1998-06, Vol.189-190, p.282-286

1998

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InN Nanostructures: Strain and Morphology

MRS proceedings, 2003, Vol.798, Article Y4.9

2003

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The exciton–polariton effect on the fluorescence properties of GaN on sapphire

Journal of crystal growth, 1998-06, Vol.189-190, p.639-643

1998

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Modeling of the Incorporation of Aluminium in Ga1-xAlxM (M=As or N) Alloys Grown by MOCVD

Materials science forum, 1998-02, Vol.264-268, p.1153-1156

1998

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Optical Anisotropy of the Optical Response for Strained GaN Epilayers Grown Along the <10–10> Direction

MRS proceedings, 1997, Vol.468, Article 243

1997

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Movpe Growth and Characterization of AlxGa1-xN Layers on Sapphire

MRS proceedings, 1997, Vol.468

1997

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Dependence of the Residual Strain in GaN on the AlN Buffer Layer Annealing Parameters

MRS proceedings, 1997, Vol.468, Article 173

1997

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Excitonic absorption of GaN epilayers on sapphire: Dynamics, intensity, and temperature dependence

Physical review. B, Condensed matter, 1999-01, Vol.59 (3), p.2254-2260

1999

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Raman study of resonance effects in Ga1-xAlxN solid solutions

MRS Internet journal of nitride semiconductor research, 1998-01, Vol.3

1998

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Head growth in fetuses with isolated congenital heart defects: lack of influence of aortic arch flow and ascending aorta oxygen saturation

Fetal myocardial deformation measured with two‐dimensional speckle‐tracking echocardiography: longitudinal prospective cohort study of 124 healthy fetuses

Cardiac function in trisomy 21 fetuses

Fetal cardiac function between 11 and 35 weeks' gestation and nuchal translucency thickness

Growth patterns and cerebroplacental hemodynamics in fetuses with congenital heart disease

Prenatal detection of transposition of the great arteries reduces mortality and morbidity

Prenatal diagnosis of congenital heart defects: accuracy and discrepancies in a multicenter cohort

Fetal premature atrial contractions: natural course, risk factors and adverse outcome

Implications of fetal premature atrial contractions: systematic review

Raman scattering in large single indium nitride dots: Correlation between morphology and strain

MOVPE growth and characterization of AlxGa1-xN

Characterization of ALN buffer layers on (0 0 0 1)-sapphire substrates

InN Nanostructures: Strain and Morphology

The exciton–polariton effect on the fluorescence properties of GaN on sapphire

Modeling of the Incorporation of Aluminium in Ga1-xAlxM (M=As or N) Alloys Grown by MOCVD

Optical Anisotropy of the Optical Response for Strained GaN Epilayers Grown Along the <10–10> Direction

Movpe Growth and Characterization of AlxGa1-xN Layers on Sapphire

Dependence of the Residual Strain in GaN on the AlN Buffer Layer Annealing Parameters

Excitonic absorption of GaN epilayers on sapphire: Dynamics, intensity, and temperature dependence

Raman study of resonance effects in Ga1-xAlxN solid solutions

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