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Optical damage performance of conductive widegap semiconductors: spatial, temporal, and lifetime modeling

Optical materials express, 2017-01, Vol.7 (1), p.202-212

2017

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Monte Carlo simulation of the CHISEL flash memory cell

IEEE transactions on electron devices, 2000-10, Vol.47 (10), p.1873-1881

2000

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On interface and oxide degradation in VLSI MOSFETs - Part II: Fowler-Nordheim stress regime

IEEE transactions on electron devices, 2002-02, Vol.49 (2), p.254-263

2002

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On interface and oxide degradation in VLSI MOSFETs - Part I: Deuterium effect in CHE stress regime

IEEE transactions on electron devices, 2002-02, Vol.49 (2), p.247-253

2002

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Explanation of P/E cycling impact on drain disturb in flash EEPROMs under CHE and CHISEL programming operation

IEEE transactions on electron devices, 2005-04, Vol.52 (4), p.534-540

2005

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Evidence of substrate enhanced high-energy tails in the distribution function of deep submicron MOSFETs by light emission measurements

IEEE electron device letters, 1999-11, Vol.20 (11), p.595-597

1999

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Experimental study of low voltage anode hole injection in thin oxides

Microelectronic engineering, 2001-11, Vol.59 (1), p.55-60

2001

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Energy transfer networks: Quasicontinuum photoluminescence linked to high densities of defects

Physical review materials, 2017-11, Vol.1 (6), Article 065201

2017

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Drain disturb during CHISEL programming of NOR flash EEPROMs-physical mechanisms and impact of technological parameters

IEEE transactions on electron devices, 2004-05, Vol.51 (5), p.701-707

2004

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CHISEL programming operation of scaled NOR flash EEPROMs-effect of voltage scaling, device scaling and technological parameters

IEEE transactions on electron devices, 2003-10, Vol.50 (10), p.2104-2111

2003

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Hot Carrier Degradation of Gain in Bipolar Transistors

MRS proceedings, 1995, Vol.391, p.11-20, Article 11

1995

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Deuterium effect on interface states and SILC generation in CHE stress conditions: A comparative study

International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138), 2000, p.339-342

2000

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Effect of P/E cycling on drain disturb in flash EEPROMs under CHE and CHISEL operation

IEEE transactions on device and materials reliability, 2004-03, Vol.4 (1), p.32-37

2004

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Stress induced leakage current analysis via quantum yield experiments

IEEE transactions on electron devices, 2000-07, Vol.47 (7), p.1341-1348

2000

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Distributed effects in high power RF LDMOS transistors

IEEE MTT-S International Microwave Symposium Digest, 2005, 2005, p.827-830

2005

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Optical damage performance of conductive widegap semiconductors: spatial, temporal, and lifetime modeling

Monte Carlo simulation of the CHISEL flash memory cell

On interface and oxide degradation in VLSI MOSFETs - Part II: Fowler-Nordheim stress regime

On interface and oxide degradation in VLSI MOSFETs - Part I: Deuterium effect in CHE stress regime

Explanation of P/E cycling impact on drain disturb in flash EEPROMs under CHE and CHISEL programming operation

Evidence of substrate enhanced high-energy tails in the distribution function of deep submicron MOSFETs by light emission measurements

Experimental study of low voltage anode hole injection in thin oxides

Energy transfer networks: Quasicontinuum photoluminescence linked to high densities of defects

Drain disturb during CHISEL programming of NOR flash EEPROMs-physical mechanisms and impact of technological parameters

CHISEL programming operation of scaled NOR flash EEPROMs-effect of voltage scaling, device scaling and technological parameters

Hot Carrier Degradation of Gain in Bipolar Transistors

Deuterium effect on interface states and SILC generation in CHE stress conditions: A comparative study

Effect of P/E cycling on drain disturb in flash EEPROMs under CHE and CHISEL operation

Stress induced leakage current analysis via quantum yield experiments

Distributed effects in high power RF LDMOS transistors

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