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Highly selective and widely tunable 1.55-μm InP/air-gap micromachined Fabry-Perot filter for optical communications

IEEE photonics technology letters, 1998-09, Vol.10 (9), p.1259-1261

1998

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Tunable microcavity based on InP-air Bragg mirrors

IEEE journal of selected topics in quantum electronics, 1999-01, Vol.5 (1), p.111-114

1999

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Wavelength conversion by optimized monolithic integrated Mach-Zehnder interferometer

IEEE photonics technology letters, 1996-04, Vol.8 (4), p.521-523

1996

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In vitro experiments and numerical simulations of airflow in realistic nasal airway geometry

Annals of biomedical engineering, 2006-06, Vol.34 (6), p.997-1007

2006

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A study of the orientation dependence of Ga(Al)As growth by MOVPE

Journal of crystal growth, 1986-09, Vol.77 (1), p.310-320

1986

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An all-optical wavelength-converter with semiconductor optical amplifiers monolithically integrated in an asymmetric passive Mach-Zehnder interferometer

IEEE photonics technology letters, 1995-09, Vol.7 (9), p.992-994

1995

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Continuous-wave operation of GaInAsSb-GaSb type-II quantum-well ridge-lasers

IEEE journal of selected topics in quantum electronics, 1999-05, Vol.5 (3), p.711-714

1999

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Regeneration improvement in all-optical wavelength converter, based on a Mach-Zehnder interferometer, by means of phase-shifter section

Electronics letters, 1997-09, Vol.33 (19), p.1629

1997

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Tunable microcavity based on InP/air Bragg mirrors

Journal of materials science. Materials in electronics, 1999-07, Vol.10 (5-6), p.447-450

1999

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Isolation and characterization of Arthrobacter sp. from activated sludge of a pulp and paper mill

Water research (Oxford), 1999, Vol.33 (4), p.947-950

1999

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New laser structure on semi-insulating substrate, grown by MOCVD, for high speed operation

Electronics letters, 1990, Vol.26 (7), p.458-459

1990

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Ultra-low-threshold, high-bandwidth, very-low noise operation of 1.52 mu m GaInAsP/InP DFB buried ridge structure laser diodes entirely grown by MOCVD

IEEE journal of quantum electronics, 1989-06, Vol.25 (6), p.1346-1352

1989

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Monolithic integration of optoelectronic devices with reactive matching networks for microwave applications

IEEE photonics technology letters, 1992-11, Vol.4 (11), p.1248-1250

1992

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InGaAs photodiodes prepared by low-pressure MOCVD

Electronics letters, 1985-05, Vol.21 (10), p.441-442

1985

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Improvement in the reliability of shells for light water reactors by manufacture from hollow ingots

Nuclear engineering and design, 1991-10, Vol.130 (3), p.467-475

1991

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The respective roles of the packet size and the lath width on toughness

Metallurgical transactions. A, Physical metallurgy and materials science, 1976-05, Vol.7 (6), p.891-894

1976

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The electron beam welding of very thick plate

The International journal of pressure vessels and piping, 1988, Vol.32 (5), p.355-387

1988

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Abrupt OMVPE grown GaAs/GaAlAs heterojunctions

Journal of crystal growth, 1984-09, Vol.68 (1), p.383-388

1984

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Aging test of MOCVD shallow proton stripe GaInAsP/InP, DH laser diode emitting at 1.5 μm

Electronics letters, 1983, Vol.19 (13), p.481

1983

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Very low threshold GaInAsP/InP double-heterostructure lasers grown by LP MOCVD

Electronics letters, 1983-01, Vol.19 (9), p.336

1983

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Reactively matched optoelectronic transceivers on InP substrate for 6 GHz operation

1993 IEEE MTT-S International Microwave Symposium Digest, 1993, p.1067-1070 vol.2

1993

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Low-threshold distributed feedback lasers fabricated on material grown completely by LP-MOCVD

IEEE journal of quantum electronics, 1985-06, Vol.21 (6), p.507-511

1985

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Spectroscopy of the deep levels in tin-doped Ga-Al-As

Thin solid films, 1980-02, Vol.65 (3), p.275-281

1980

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CW operation of GaInAsP buried ridge structure laser at 1.5 μm grown by LP-MOCVD

Electronics letters, 1984, Vol.20 (21), p.850-851

1984

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16 channels, switchable external cavity-based multi-wavelength laser for DWDM applications

Proceedings 27th European Conference on Optical Communication (Cat. No.01TH8551), 2001, Vol.2, p.196-197 vol.2

2001

Volltextzugriff (PDF)

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Highly selective and widely tunable 1.55-μm InP/air-gap micromachined Fabry-Perot filter for optical communications

Tunable microcavity based on InP-air Bragg mirrors

Wavelength conversion by optimized monolithic integrated Mach-Zehnder interferometer

In vitro experiments and numerical simulations of airflow in realistic nasal airway geometry

A study of the orientation dependence of Ga(Al)As growth by MOVPE

An all-optical wavelength-converter with semiconductor optical amplifiers monolithically integrated in an asymmetric passive Mach-Zehnder interferometer

Continuous-wave operation of GaInAsSb-GaSb type-II quantum-well ridge-lasers

Regeneration improvement in all-optical wavelength converter, based on a Mach-Zehnder interferometer, by means of phase-shifter section

Tunable microcavity based on InP/air Bragg mirrors

Isolation and characterization of Arthrobacter sp. from activated sludge of a pulp and paper mill

New laser structure on semi-insulating substrate, grown by MOCVD, for high speed operation

Ultra-low-threshold, high-bandwidth, very-low noise operation of 1.52 mu m GaInAsP/InP DFB buried ridge structure laser diodes entirely grown by MOCVD

Monolithic integration of optoelectronic devices with reactive matching networks for microwave applications

InGaAs photodiodes prepared by low-pressure MOCVD

Improvement in the reliability of shells for light water reactors by manufacture from hollow ingots

The respective roles of the packet size and the lath width on toughness

The electron beam welding of very thick plate

Abrupt OMVPE grown GaAs/GaAlAs heterojunctions

Aging test of MOCVD shallow proton stripe GaInAsP/InP, DH laser diode emitting at 1.5 μm

Very low threshold GaInAsP/InP double-heterostructure lasers grown by LP MOCVD

Reactively matched optoelectronic transceivers on InP substrate for 6 GHz operation

Low-threshold distributed feedback lasers fabricated on material grown completely by LP-MOCVD

Spectroscopy of the deep levels in tin-doped Ga-Al-As

CW operation of GaInAsP buried ridge structure laser at 1.5 μm grown by LP-MOCVD

16 channels, switchable external cavity-based multi-wavelength laser for DWDM applications

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