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Stable hole doping of graphene for low electrical resistance and high optical transparency

Nanotechnology, 2011-10, Vol.22 (42), p.425701-1-6

2011

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Tuning Schottky diodes at the many-layer-graphene/semiconductor interface by doping

Carbon (New York), 2011-05, Vol.49 (6), p.2033-2038

2011

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Low-temperature epitaxy of Si and Ge by direct ion beam deposition

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1987-07, Vol.5 (4), p.2135-2139

1987

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Characterization of ion implantation through thin Ti metal layers on Si

Materials letters, 1987-08, Vol.5 (9), p.315-321

1987

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Excimer laser mixing of nickel overlayers on silicon carbide

Materials letters, 1985-01, Vol.3 (7), p.261-264

1985

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Solid‐phase‐epitaxial growth and formation of metastable alloys in ion implanted silicon

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1983-10, Vol.1 (4), p.871-887

1983

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Tribological Properties of Ion-Implanted 52100 Steel

ASLE transactions, 1983-01, Vol.26 (4), p.466-474

1983

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Damage accumulation in ceramics during ion implantation

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1986-06, Vol.16 (2), p.212-220

1986

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Multiple Scattering and Planar Dechanneling in Silicon and Germanium

Physical review. B, Solid state, 1973-08, Vol.8 (3), p.935-951

1973

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Ion beam deposition in materials research

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1989-02, Vol.37, p.16-21

1989

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Low-temperature epitaxial growth of Si and Ge and fabrication of isotopic heterostructures by direct ion beam deposition

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1987, Vol.19, p.975-982

1987

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Morphological instabilities and ion beam mixing in Ge

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1985-01, Vol.7, p.639-644

1985

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Development of focused ion beam systems with various ion species

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2005-12, Vol.241 (1-4), p.335-340

2005

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ORNL Collaborative Research Center for Surface Modification

JOM, 1984-01, Vol.36 (8), p.44-44

Appleton, B. R.

1984

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Formation of amorphous layers in Al2O3 by ion implantation

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1985-01, Vol.7-8, p.473-478

1985

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Thermal annealing of Fe implanted Al2O3 in an oxidizing and reducing environment

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1985-03, Vol.7-8, p.541-546

1985

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Surface property modification of ceramics by ion beams

Journal of materials for energy systems, 1986-12, Vol.8 (3), p.255-266

1986

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Enhanced depth of amorphization of semiconductors by molecular implantation

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1986-06, Vol.16 (4), p.373-375

1986

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TEM study of ion beam mixed nickel silicides formed on SiC at different implant temperatures

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1985-01, Vol.7, p.571-575

1985

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Ion implantation, ion beam mixing, and annealing studies of metals in Al2O3, SiC and Si3N4

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1984-01, Vol.1 (2-3), p.167-175

1984

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Depth distribution of self-ion damage and comparison of ion damage rates to neutron damage rates for aluminum

Journal of nuclear materials, 1984-08, Vol.125 (3), p.330-341

1984

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Laser Annealing of Ion Implanted Silicon

IEEE transactions on nuclear science, 1981-04, Vol.28 (2), p.1759-1962

1981

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Enhanced Backscattering near 180 degrees for Energetic Ions in Solids

IEEE transactions on nuclear science, 1981, Vol.28 (2), p.1824-1827

1981

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Use of damage profiles in silicon as a measure of plasma particle energies in tokamaks

Journal of nuclear materials, 1981-01, Vol.98 (1), p.231-234

1981

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Laser Processing of Ion Implanted Silicon

IEEE transactions on nuclear science, 1979-02, Vol.26 (1), p.1686-1692

1979

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Stable hole doping of graphene for low electrical resistance and high optical transparency

Tuning Schottky diodes at the many-layer-graphene/semiconductor interface by doping

Low-temperature epitaxy of Si and Ge by direct ion beam deposition

Characterization of ion implantation through thin Ti metal layers on Si

Excimer laser mixing of nickel overlayers on silicon carbide

Solid‐phase‐epitaxial growth and formation of metastable alloys in ion implanted silicon

Tribological Properties of Ion-Implanted 52100 Steel

Damage accumulation in ceramics during ion implantation

Multiple Scattering and Planar Dechanneling in Silicon and Germanium

Ion beam deposition in materials research

Low-temperature epitaxial growth of Si and Ge and fabrication of isotopic heterostructures by direct ion beam deposition

Morphological instabilities and ion beam mixing in Ge

Development of focused ion beam systems with various ion species

ORNL Collaborative Research Center for Surface Modification

Formation of amorphous layers in Al2O3 by ion implantation

Thermal annealing of Fe implanted Al2O3 in an oxidizing and reducing environment

Surface property modification of ceramics by ion beams

Enhanced depth of amorphization of semiconductors by molecular implantation

TEM study of ion beam mixed nickel silicides formed on SiC at different implant temperatures

Ion implantation, ion beam mixing, and annealing studies of metals in Al2O3, SiC and Si3N4

Depth distribution of self-ion damage and comparison of ion damage rates to neutron damage rates for aluminum

Laser Annealing of Ion Implanted Silicon

Enhanced Backscattering near 180 degrees for Energetic Ions in Solids

Use of damage profiles in silicon as a measure of plasma particle energies in tokamaks

Laser Processing of Ion Implanted Silicon

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