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Evidence of two distinct degradation mechanisms from temperature dependence of negative bias stressing of the ultrathin gate p-MOSFET
IEEE electron device letters, 2005-12, Vol.26 (12), p.906-908
2005
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Insight Into the Suppressed Recovery of NBTI-Stressed Ultrathin Oxynitride Gate pMOSFET
IEEE electron device letters, 2006-09, Vol.27 (9), p.755-758
2006
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Evidence for two distinct positive trapped charge components in NBTI stressed p-MOSFETs employing ultrathin CVD silicon nitride gate dielectric
IEEE electron device letters, 2004-09, Vol.25 (9), p.637-639
2004
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Self-Heating-Induced Spatial Spread of Interface State Generation by Hot-Electron Effect: Role of the High-Energy Tail Electron
IEEE electron device letters, 2008-08, Vol.29 (8), p.934-937
2008
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High-energy tail electrons as the mechanism for the worst-case hot-carrier stress degradation of the deep submicrometer N-MOSFET
IEEE electron device letters, 2003-07, Vol.24 (7), p.469-471
2003
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Percolation resistance evolution during progressive breakdown in narrow MOSFETs
IEEE electron device letters, 2006-05, Vol.27 (5), p.396-398
2006
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A new insight into the degradation behavior of the LDD N-MOSFET during dynamic hot-carrier stressing
IEEE electron device letters, 2001-11, Vol.22 (11), p.553-555
2001
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A reassessment of ac hot-carrier degradation in deep-submicrometer LDD N-MOSFET
IEEE electron device letters, 2003-09, Vol.24 (9), p.598-600
2003
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Nonlocal hot-electron injection as the mechanism for the predominant source-side gate oxide degradation in CHE-stressed deep submicrometer n-MOSFETs
IEEE electron device letters, 2004-06, Vol.25 (6), p.417-419
2004
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The role of electron traps on the post-stress interface trap generation in hot-carrier stressed p-MOSFETs
IEEE transactions on electron devices, 1999-04, Vol.46 (4), p.738-746
1999
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Reassessing NBTI mechanisms by ultrafast charge pumping measurement
2009 IEEE International Integrated Reliability Workshop Final Report, 2009, p.25-29
2009
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A unified model for the self-limiting hot-carrier degradation in LDD n-MOSFETs
IEEE transactions on electron devices, 1998-01, Vol.45 (1), p.149-159
1998
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A Critical Gate Voltage Triggering Irreversible Gate Dielectric Degradation
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual, 2007, p.576-577
2007
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Energy distribution and electrical characteristics of NBTI induced Si/SiON interface states
2008 IEEE International Reliability Physics Symposium, 2008, p.737-738
2008
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Physical framework for NBTI: Insight from ultra-fast switching measurement of NBTI recovery
2008 IEEE International Reliability Physics Symposium, 2008, p.735-736
2008
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Real-time observation of trap generation by scanning tunneling microscopy and the correlation to high-κ gate stack breakdown
2009 IEEE International Reliability Physics Symposium, 2009, p.704-707
2009
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New observations on the damage relaxation mechanisms in p-MOSFETs under dynamic NBTI stressing
2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual, 2005, p.706-707
2005
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A novel experimental technique for the lateral profiling of oxide and interface state charges in hot-hole degraded n-MOSFETs
IEEE electron device letters, 1998-01, Vol.19 (1), p.23-25
1998
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A new assessment of the self-limiting hot-carrier degradation in LDD NMOSFET's by charge pumping measurement
IEEE electron device letters, 1997-06, Vol.18 (6), p.299-301
1997
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A new model for the post-stress interface trap generation in hot-carrier stressed p-MOSFETs
IEEE electron device letters, 1999-03, Vol.20 (3), p.135-137
1999
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A comparison of hot-carrier degradation in tungsten polycide gate and poly gate p-MOSFETs
IEEE transactions on electron devices, 1998-04, Vol.45 (4), p.895-903
1998
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A Consistent Deep-Level Hole Trapping Model for Negative Bias Temperature Instability
IEEE transactions on device and materials reliability, 2008-03, Vol.8 (1), p.22-34
2008
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A study of hot carrier degradation in NMOSEET's by gate capacitance and charge pumping current
IEEE transactions on electron devices, 1995-07, Vol.42 (7), p.1321-1328
1995
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On the dominant interface trap generation process during hot-carrier stressing [MOSFETs]
2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167), 2001, p.412-418
2001
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Can the reaction-diffusion model explain generation and recovery of interface states contributing to NBTI?
2009 IEEE International Electron Devices Meeting (IEDM), 2009, p.1-4
2009
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