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Germanium-Tin (GeSn) P-Channel Fin Field-Effect Transistor Fabricated on a Novel GeSn-on-Insulator Substrate

IEEE transactions on electron devices, 2018-09, Vol.65 (9), p.3754-3761

2018

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n-MOSFET With Silicon-Carbon Source/Drain for Enhancement of Carrier Transport

IEEE transactions on electron devices, 2007-02, Vol.54 (2), p.249-256

2007

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Tunneling Field-Effect Transistor: Effect of Strain and Temperature on Tunneling Current

IEEE electron device letters, 2009-09, Vol.30 (9), p.981-983

2009

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Strained n-Channel FinFETs Featuring In Situ Doped Silicon-Carbon (\hbox\hbox) Source and Drain Stressors With High Carbon Content

IEEE transactions on electron devices, 2008-09, Vol.55 (9), p.2475-2483

2008

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Strain and Materials Engineering for the I-MOS Transistor With an Elevated Impact-Ionization Region

IEEE transactions on electron devices, 2007-10, Vol.54 (10), p.2778-2785

2007

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Performance Enhancement in Uniaxial Strained Silicon-on-Insulator N-MOSFETs Featuring Silicon-Carbon Source/Drain Regions

IEEE transactions on electron devices, 2007-11, Vol.54 (11), p.2910-2917

2007

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GeTe Liner Stressor Featuring Phase-Change- Induced Volume Contraction for Strain Engineering of Sub-50-nm p-Channel FinFETs: Simulation and Electrical Characterization

IEEE transactions on electron devices, 2014-08, Vol.61 (8), p.2647-2655

2014

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Ultra High-Stress Liner Comprising Diamond-Like Carbon for Performance Enhancement of p-Channel Multiple-Gate Transistors

IEEE transactions on electron devices, 2009-06, Vol.56 (6), p.1277-1283

2009

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Phase Change Liner Stressor for Strain Engineering of P-Channel FinFETs

IEEE transactions on electron devices, 2013-09, Vol.60 (9), p.2703-2711

2013

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Strained Silicon Nanowire Transistors With Germanium Source and Drain Stressors

IEEE transactions on electron devices, 2008-11, Vol.55 (11), p.3048-3055

2008

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Strain engineering of ultra-thin silicon-on-insulator structures using through-buried-oxide ion implantation and crystallization

Solid-state electronics, 2013-05, Vol.83, p.37-41

2013

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Strained p-Channel FinFETs With Extended \Pi -Shaped Silicon-Germanium Source and Drain Stressors

IEEE electron device letters, 2007-10, Vol.28 (10), p.905-908

2007

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Strained n-Channel Transistors With Silicon Source and Drain Regions and Embedded Silicon/Germanium as Strain-Transfer Structure

IEEE electron device letters, 2007-07, Vol.28 (7), p.609-612

2007

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Strained -MOSFET With Embedded Source/Drain Stressors and Strain-Transfer Structure (STS) for Enhanced Transistor Performance

IEEE transactions on electron devices, 2008-03, Vol.55 (3), p.850-857

2008

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N-Channel MOSFETs With Embedded Silicon-Carbon Source/Drain Stressors Formed Using Cluster-Carbon Implant and Excimer-Laser-Induced Solid Phase Epitaxy

IEEE electron device letters, 2008-12, Vol.29 (12), p.1315-1318

2008

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Enhanced Strain Effects in 25-nm Gate-Length Thin-Body nMOSFETs With Silicon-Carbon Source/Drain and Tensile-Stress Liner

IEEE electron device letters, 2007-04, Vol.28 (4), p.301-304

2007

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Strained Silicon-Germanium-On-Insulator n-MOSFET With Embedded Silicon Source-and-Drain Stressors

IEEE electron device letters, 2008-01, Vol.29 (1), p.77-79

2008

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Spacer Removal Technique for Boosting Strain in n-Channel FinFETs With Silicon-Carbon Source and Drain Stressors

IEEE electron device letters, 2008-01, Vol.29 (1), p.80-82

2008

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NBTI Reliability of P-Channel Transistors With Diamond-Like Carbon Liner Having Ultrahigh Compressive Stress

IEEE electron device letters, 2009-08, Vol.30 (8), p.867-869

2009

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N-Channel (110)-Sidewall Strained FinFETs With Silicon-Carbon Source and Drain Stressors and Tensile Capping Layer

IEEE electron device letters, 2007-11, Vol.28 (11), p.1014-1017

2007

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Lattice strain analysis of silicon fin field-effect transistor structures wrapped by Ge2Sb2Te5 liner stressor

Journal of applied physics, 2013-02, Vol.113 (7)

2013

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Pulsed Laser Annealing of Silicon-Carbon Source/Drain in MuGFETs for Enhanced Dopant Activation and High Substitutional Carbon Concentration

IEEE electron device letters, 2008-05, Vol.29 (5), p.464-467

2008

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Silicon-Carbon Stressors With High Substitutional Carbon Concentration and In Situ Doping Formed in Source/Drain Extensions of n-Channel Transistors

IEEE electron device letters, 2008-05, Vol.29 (5), p.460-463

2008

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Diamond-Like Carbon (DLC) Liner: A New Stressor for P-Channel Multiple-Gate Field-Effect Transistors

IEEE electron device letters, 2008-07, Vol.29 (7), p.750-752

2008

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A High-Stress Liner Comprising Diamond-Like Carbon (DLC) for Strained p-Channel MOSFET

IEEE electron device letters, 2008-02, Vol.29 (2), p.192-194

2008

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Germanium-Tin (GeSn) P-Channel Fin Field-Effect Transistor Fabricated on a Novel GeSn-on-Insulator Substrate

n-MOSFET With Silicon-Carbon Source/Drain for Enhancement of Carrier Transport

Tunneling Field-Effect Transistor: Effect of Strain and Temperature on Tunneling Current

Strained n-Channel FinFETs Featuring In Situ Doped Silicon-Carbon (\hbox\hbox) Source and Drain Stressors With High Carbon Content

Strain and Materials Engineering for the I-MOS Transistor With an Elevated Impact-Ionization Region

Performance Enhancement in Uniaxial Strained Silicon-on-Insulator N-MOSFETs Featuring Silicon-Carbon Source/Drain Regions

GeTe Liner Stressor Featuring Phase-Change- Induced Volume Contraction for Strain Engineering of Sub-50-nm p-Channel FinFETs: Simulation and Electrical Characterization

Ultra High-Stress Liner Comprising Diamond-Like Carbon for Performance Enhancement of p-Channel Multiple-Gate Transistors

Phase Change Liner Stressor for Strain Engineering of P-Channel FinFETs

Strained Silicon Nanowire Transistors With Germanium Source and Drain Stressors

Strain engineering of ultra-thin silicon-on-insulator structures using through-buried-oxide ion implantation and crystallization

Strained p-Channel FinFETs With Extended \Pi -Shaped Silicon-Germanium Source and Drain Stressors

Strained n-Channel Transistors With Silicon Source and Drain Regions and Embedded Silicon/Germanium as Strain-Transfer Structure

Strained -MOSFET With Embedded Source/Drain Stressors and Strain-Transfer Structure (STS) for Enhanced Transistor Performance

N-Channel MOSFETs With Embedded Silicon-Carbon Source/Drain Stressors Formed Using Cluster-Carbon Implant and Excimer-Laser-Induced Solid Phase Epitaxy

Enhanced Strain Effects in 25-nm Gate-Length Thin-Body nMOSFETs With Silicon-Carbon Source/Drain and Tensile-Stress Liner

Strained Silicon-Germanium-On-Insulator n-MOSFET With Embedded Silicon Source-and-Drain Stressors

Spacer Removal Technique for Boosting Strain in n-Channel FinFETs With Silicon-Carbon Source and Drain Stressors

NBTI Reliability of P-Channel Transistors With Diamond-Like Carbon Liner Having Ultrahigh Compressive Stress

N-Channel (110)-Sidewall Strained FinFETs With Silicon-Carbon Source and Drain Stressors and Tensile Capping Layer

Lattice strain analysis of silicon fin field-effect transistor structures wrapped by Ge2Sb2Te5 liner stressor

Pulsed Laser Annealing of Silicon-Carbon Source/Drain in MuGFETs for Enhanced Dopant Activation and High Substitutional Carbon Concentration

Silicon-Carbon Stressors With High Substitutional Carbon Concentration and In Situ Doping Formed in Source/Drain Extensions of n-Channel Transistors

Diamond-Like Carbon (DLC) Liner: A New Stressor for P-Channel Multiple-Gate Field-Effect Transistors

A High-Stress Liner Comprising Diamond-Like Carbon (DLC) for Strained p-Channel MOSFET

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