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On the Seebeck Coefficient and Its Temperature Dependence for Standard CMOS Materials

IEEE sensors journal, 2017-01, Vol.17 (1), p.30-36

2017

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IEEE_Xplore

Ultralow Specific On-Resistance High-Voltage SOI Lateral MOSFET

IEEE electron device letters, 2011-02, Vol.32 (2), p.185-187

2011

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IEEE_Xplore

Superjunction Power Devices, History, Development, and Future Prospects

IEEE transactions on electron devices, 2017-03, Vol.64 (3), p.713-727

2017

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IEEE_Xplore

An SOI CMOS-Based Multi-Sensor MEMS Chip for Fluidic Applications

Sensors (Basel, Switzerland), 2016-11, Vol.16 (11), p.1608

2016

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True Material Limit of Power Devices-Applied to 2-D Superjunction MOSFET

IEEE transactions on electron devices, 2018-04, Vol.65 (4), p.1432-1439

2018

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IEEE_Xplore

Static and Dynamic Effects of the Incomplete Ionization in Superjunction Devices

IEEE transactions on electron devices, 2018-10, Vol.65 (10), p.4469-4475

2018

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IEEE_Xplore

Low on-Resistance SOI Dual-Trench-Gate MOSFET

IEEE transactions on electron devices, 2012-02, Vol.59 (2), p.504-509

2012

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IEEE_Xplore

A novel partial silicon on insulator high voltage LDMOS with low-k dielectric buried layer

Chinese physics B, 2010-07, Vol.19 (7), p.530-536, Article 077306

罗小蓉王元刚邓浩 Florin Udrea

2010

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Low-Loss 800-V Lateral IGBT in Bulk Si Technology Using a Floating Electrode

IEEE electron device letters, 2018-06, Vol.39 (6), p.866-868

2018

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IEEE_Xplore

High-Voltage 3-D Partial SOI Technology Platform for Power Integrated Circuits

IEEE transactions on electron devices, 2022-06, Vol.69 (6), p.3296-3301

2022

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IEEE_Xplore

Smart CMOS mid-infrared sensor array

Optics letters, 2019-09, Vol.44 (17), p.4111-4114

2019

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Modeling of CMOS Single Membrane Thermopile Detector Arrays

IEEE sensors journal, 2022-01, Vol.22 (2), p.1366-1373

2022

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IEEE_Xplore

Evaluation of thin film p-type single crystal silicon for use as a CMOS Resistance Temperature Detector (RTD)

Sensors and actuators. A. Physical., 2018-11, Vol.283, p.159-168

2018

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On the Superior Reverse Recovery Properties of Silicon Partial SOI SJ Diode

2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2024, p.1-4

2024

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IEEE_Xplore

Boost Converter With SiC JFETs: Comparison With CoolMOS and Tests at Elevated Case Temperature

IEEE transactions on power electronics, 2013-04, Vol.28 (4), p.1938-1945

2013

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IEEE_Xplore

Multiple-Wavelength Detection in SOI Lateral PIN Diodes With Backside Reflectors

IEEE transactions on industrial electronics (1982), 2017-09, Vol.64 (9), p.7368-7376

2017

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IEEE_Xplore

Substantiation of buried two dimensional hole gas (2DHG) existence inGaN-on-Si epitaxial heterostructure

Applied physics letters, 2017-04, Vol.110 (16)

2017

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SOI multidirectional thermoelectric flow sensor for harsh environment applications

2015 International Semiconductor Conference (CAS), 2015, p.95-98

2015

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IEEE_Xplore

On the variation of the 2DEG charge density with the density of the surface donor traps in AiGaN/GaN transistors

CAS 2013 (International Semiconductor Conference), 2013, Vol.2, p.155-158

2013

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IEEE_Xplore

Zero reverse recovery in SiC and GaN Schottky diodes: A comparison

2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2016, p.71-74

2016

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IEEE_Xplore

Partial SOI Power LDMOS With a Variable Low- k Dielectric Buried Layer and a Buried P Layer

IEEE electron device letters, 2010-06, Vol.31 (6), p.594-596

2010

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IEEE_Xplore

200-V Lateral Superjunction LIGBT on Partial SOI

IEEE electron device letters, 2012-09, Vol.33 (9), p.1291-1293

2012

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IEEE_Xplore

An experimental demonstration of a 4.5 kV "Bi-mode Gate Commutated Thyristor" (BGCT)

2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2015, p.109-112

2015

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IEEE_Xplore

The Nanoscale Silicon Accumulation-Mode MOSFET-A Comprehensive Numerical Study

IEEE transactions on electron devices, 2008-11, Vol.55 (11), p.2946-2959

2008

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IEEE_Xplore

CMOS-compatible SOI micro-hotplate-based oxygen sensor

2016 46th European Solid-State Device Research Conference (ESSDERC), 2016, p.280-283

2016

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IEEE_Xplore

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On the Seebeck Coefficient and Its Temperature Dependence for Standard CMOS Materials

Ultralow Specific On-Resistance High-Voltage SOI Lateral MOSFET

Superjunction Power Devices, History, Development, and Future Prospects

An SOI CMOS-Based Multi-Sensor MEMS Chip for Fluidic Applications

True Material Limit of Power Devices-Applied to 2-D Superjunction MOSFET

Static and Dynamic Effects of the Incomplete Ionization in Superjunction Devices

Low on-Resistance SOI Dual-Trench-Gate MOSFET

A novel partial silicon on insulator high voltage LDMOS with low-k dielectric buried layer

Low-Loss 800-V Lateral IGBT in Bulk Si Technology Using a Floating Electrode

High-Voltage 3-D Partial SOI Technology Platform for Power Integrated Circuits

Smart CMOS mid-infrared sensor array

Modeling of CMOS Single Membrane Thermopile Detector Arrays

Evaluation of thin film p-type single crystal silicon for use as a CMOS Resistance Temperature Detector (RTD)

On the Superior Reverse Recovery Properties of Silicon Partial SOI SJ Diode

Boost Converter With SiC JFETs: Comparison With CoolMOS and Tests at Elevated Case Temperature

Multiple-Wavelength Detection in SOI Lateral PIN Diodes With Backside Reflectors

Substantiation of buried two dimensional hole gas (2DHG) existence inGaN-on-Si epitaxial heterostructure

SOI multidirectional thermoelectric flow sensor for harsh environment applications

On the variation of the 2DEG charge density with the density of the surface donor traps in AiGaN/GaN transistors

Zero reverse recovery in SiC and GaN Schottky diodes: A comparison

Partial SOI Power LDMOS With a Variable Low- k Dielectric Buried Layer and a Buried P Layer

200-V Lateral Superjunction LIGBT on Partial SOI

An experimental demonstration of a 4.5 kV "Bi-mode Gate Commutated Thyristor" (BGCT)

The Nanoscale Silicon Accumulation-Mode MOSFET-A Comprehensive Numerical Study

CMOS-compatible SOI micro-hotplate-based oxygen sensor

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