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Mid-Infrared InAs Photodetector Grown on GaAs Substrate Through Cation Exchange

IEEE photonics technology letters, 2017-03, Vol.29 (5), p.458-461

2017

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Monolithic Integration of InAs Quantum-Well n-MOSFETs and Ultrathin Body Ge p-MOSFETs on a Si Substrate

IEEE transactions on electron devices, 2017-02, Vol.64 (2), p.353-360

2017

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Room Temperature 3.5- \mu \text Mid-Infrared InAs Photovoltaic Detector on a Si Substrate

IEEE photonics technology letters, 2016-08, Vol.28 (15), p.1653-1656

2016

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Dry Etched Waveguide Laser Diode on GeOI

IEEE journal of selected topics in quantum electronics, 2015-11, Vol.21 (6), p.264-269

2015

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Enabling low power and high speed OEICs: First monolithic integration of InGaAs n-FETs and lasers on Si substrate

2017 Symposium on VLSI Technology, 2017, p.T56-T57

2017

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First monolithic integration of Ge P-FETs and InAs N-FETs on silicon substrate: Sub-120 nm III-V buffer, sub-5 nm ultra-thin body, common raised S/D, and gate stack modules

2015 IEEE International Electron Devices Meeting (IEDM), 2015, p.2.3.1-2.3.4

2015

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Gate-all-around CMOS (InAs n-FET and GaSb p-FET) based on vertically-stacked nanowires on a Si platform, enabled by extremely-thin buffer layer technology and common gate stack and contact modules

2015 IEEE International Electron Devices Meeting (IEDM), 2015, p.15.4.1-15.4.4

2015

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Si substrate based GaAs/AlGaAs quantum well infrared photodetector with Ge buffer

2021 IEEE Photonics Society Summer Topicals Meeting Series (SUM), 2021, p.1-3

2021

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Mid-infrared to ultraviolet optical properties of InSb grown on GaAs by molecular beam epitaxy

Journal of applied physics, 2015-06, Vol.117 (22)

2015

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Performance of 1 eV GaNAsSb‐based photovoltaic cell on Si substrate at different growth temperatures

Progress in photovoltaics, 2017-04, Vol.25 (4), p.327-332

2017

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Growth of 1-eV GaNAsSb-based photovoltaic cell on silicon substrate at different As/Ga beam equivalent pressure ratios

Progress in photovoltaics, 2016-03, Vol.24 (3), p.340-347

2016

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First Si-Waveguide-Integrated InGaAs/InAlAs Avalanche Photodiodes on SOI Platform

2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2022, p.409-410

2022

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First InGaAs/InAlAs Single-Photon Avalanche Diodes (SPADs) Hetero Integrated with Si Photonics on SOI Platform for 1550 nm Detection

2021 Symposium on VLSI Technology, 2021, p.1-2

2021

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First InGaAs/InAlAs Single-Photon Avalanche Diodes (SPADs) Heterogeneously Integrated with Si Photonics on SOI Platform for 1550 nm Detection

2021 Symposium on VLSI Circuits, 2021, p.1-2

2021

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Growth of indium arsenide on silicon-based substrates using molecular beam epitaxy

2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM), 2014, p.73-74

2014

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Mid-Infrared InAs Photodetector Grown on GaAs Substrate Through Cation Exchange

Monolithic Integration of InAs Quantum-Well n-MOSFETs and Ultrathin Body Ge p-MOSFETs on a Si Substrate

Room Temperature 3.5- \mu \text Mid-Infrared InAs Photovoltaic Detector on a Si Substrate

Dry Etched Waveguide Laser Diode on GeOI

Enabling low power and high speed OEICs: First monolithic integration of InGaAs n-FETs and lasers on Si substrate

First monolithic integration of Ge P-FETs and InAs N-FETs on silicon substrate: Sub-120 nm III-V buffer, sub-5 nm ultra-thin body, common raised S/D, and gate stack modules

Gate-all-around CMOS (InAs n-FET and GaSb p-FET) based on vertically-stacked nanowires on a Si platform, enabled by extremely-thin buffer layer technology and common gate stack and contact modules

Si substrate based GaAs/AlGaAs quantum well infrared photodetector with Ge buffer

Mid-infrared to ultraviolet optical properties of InSb grown on GaAs by molecular beam epitaxy

Performance of 1 eV GaNAsSb‐based photovoltaic cell on Si substrate at different growth temperatures

Growth of 1-eV GaNAsSb-based photovoltaic cell on silicon substrate at different As/Ga beam equivalent pressure ratios

First Si-Waveguide-Integrated InGaAs/InAlAs Avalanche Photodiodes on SOI Platform

First InGaAs/InAlAs Single-Photon Avalanche Diodes (SPADs) Hetero Integrated with Si Photonics on SOI Platform for 1550 nm Detection

First InGaAs/InAlAs Single-Photon Avalanche Diodes (SPADs) Heterogeneously Integrated with Si Photonics on SOI Platform for 1550 nm Detection

Growth of indium arsenide on silicon-based substrates using molecular beam epitaxy

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