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Random Dopant-Induced Variability in Si-InAs Nanowire Tunnel FETs: A Quantum Transport Simulation Study

IEEE electron device letters, 2018-09, Vol.39 (9), p.1473-1476

2018

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Multisubband Ensemble Monte Carlo Analysis of Tunneling Leakage Mechanisms in Ultrascaled FDSOI, DGSOI, and FinFET Devices

IEEE transactions on electron devices, 2019-03, Vol.66 (3), p.1145-1152

2019

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Comprehensive mobility study of silicon nanowire transistors using multi-subband models

Nano express, 2023-06, Vol.4 (2), p.25005

2023

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Quantum Mechanical Simulations of the Impact of Surface Roughness on Nanowire TFET performance

2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2019, p.1-4

2019

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Machine Learning Approach for Predicting the Effect of Statistical Variability in Si Junctionless Nanowire Transistors

IEEE electron device letters, 2019-09, Vol.40 (9), p.1366-1369

2019

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Simulation Study of Vertically Stacked Lateral Si Nanowires Transistors for 5-nm CMOS Applications

IEEE journal of the Electron Devices Society, 2017-11, Vol.5 (6), p.466-472

2017

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Simulation and Fabrication of Monolithic III-V Photodetectors on Si: The Role of Growth Facets and Localization of Heterojunctions

IEEE transactions on electron devices, 2024-10, Vol.71 (10), p.6124-6130

2024

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Multi-Subband Ensemble Monte Carlo simulation of Si nanowire MOSFETs

2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2015, p.353-356

2015

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Mobility of Circular and Elliptical Si Nanowire Transistors Using a Multi-Subband 1D Formalism

IEEE electron device letters, 2019-10, Vol.40 (10), p.1571-1574

2019

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Hierarchical simulation of nanosheet field effect transistor: NESS flow

Solid-state electronics, 2023-01, Vol.199, p.108489, Article 108489

2023

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Steep-Subthreshold Bilayer Tunnel Field-Effect Transistor-Based Efficient pH Sensing: Performance Characterization and Optimization

IEEE sensors letters, 2024-08, Vol.8 (8), p.1-4

2024

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Impact of Randomly Distributed Dopants on \Omega -Gate Junctionless Silicon Nanowire Transistors

IEEE transactions on electron devices, 2018-05, Vol.65 (5), p.1692-1698

2018

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Fully Convolutional Generative Machine Learning Method for Accelerating Non-Equilibrium Green's Function Simulations

2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2023, p.169-172

2023

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Experimental and Simulation Study of Silicon Nanowire Transistors Using Heavily Doped Channels

IEEE transactions on nanotechnology, 2017-09, Vol.16 (5), p.727-735

2017

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Surface Roughness Scattering in NEGF using self-energy formulation

2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2019, p.1-4

2019

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Impact of strain on the performance of Si nanowires transistors at the scaling limit: A 3D Monte Carlo/2D poisson schrodinger simulation study

2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2016, p.213-216

2016

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One-dimensional multi-subband Monte Carlo simulation of charge transport in Si nanowire transistors

2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2016, p.23-26

2016

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Interactions between precisely placed dopants and interface roughness in silicon nanowire transistors: Full 3-D NEGF simulation study

2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2013, p.416-419

2013

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Unravelling the Impact of Random Dopant Fluctuations on Si-Based 3nm NSFET: A NEGF Analysis

2024 IEEE 24th International Conference on Nanotechnology (NANO), 2024, p.5-8

2024

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Automated Algorithmic Parameter Extraction of TCAD-Based SPAD SPICE Models

2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2024, p.01-04

2024

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Sensitivity and Reliability Assessment of a Strained Silicon Junctionless FinFET-based Hydrogen Gas Sensor

2024 IEEE Latin American Electron Devices Conference (LAEDC), 2024, p.1-4

2024

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Simulation of Si nanowire quantum-dot devices for authentication

2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2019, p.1-4

2019

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Nanowire FETs

2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC), 2018, p.1-4

2018

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Self-consistent physical modeling of SiOx-based RRAM structures

2015 International Workshop on Computational Electronics (IWCE), 2015, p.1-4

2015

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Variability study of high current junctionless silicon nanowire transistors

2017 IEEE 12th Nanotechnology Materials and Devices Conference (NMDC), 2017, p.87-88

2017

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Random Dopant-Induced Variability in Si-InAs Nanowire Tunnel FETs: A Quantum Transport Simulation Study

Multisubband Ensemble Monte Carlo Analysis of Tunneling Leakage Mechanisms in Ultrascaled FDSOI, DGSOI, and FinFET Devices

Comprehensive mobility study of silicon nanowire transistors using multi-subband models

Quantum Mechanical Simulations of the Impact of Surface Roughness on Nanowire TFET performance

Machine Learning Approach for Predicting the Effect of Statistical Variability in Si Junctionless Nanowire Transistors

Simulation Study of Vertically Stacked Lateral Si Nanowires Transistors for 5-nm CMOS Applications

Simulation and Fabrication of Monolithic III-V Photodetectors on Si: The Role of Growth Facets and Localization of Heterojunctions

Multi-Subband Ensemble Monte Carlo simulation of Si nanowire MOSFETs

Mobility of Circular and Elliptical Si Nanowire Transistors Using a Multi-Subband 1D Formalism

Hierarchical simulation of nanosheet field effect transistor: NESS flow

Steep-Subthreshold Bilayer Tunnel Field-Effect Transistor-Based Efficient pH Sensing: Performance Characterization and Optimization

Impact of Randomly Distributed Dopants on \Omega -Gate Junctionless Silicon Nanowire Transistors

Fully Convolutional Generative Machine Learning Method for Accelerating Non-Equilibrium Green's Function Simulations

Experimental and Simulation Study of Silicon Nanowire Transistors Using Heavily Doped Channels

Surface Roughness Scattering in NEGF using self-energy formulation

Impact of strain on the performance of Si nanowires transistors at the scaling limit: A 3D Monte Carlo/2D poisson schrodinger simulation study

One-dimensional multi-subband Monte Carlo simulation of charge transport in Si nanowire transistors

Interactions between precisely placed dopants and interface roughness in silicon nanowire transistors: Full 3-D NEGF simulation study

Unravelling the Impact of Random Dopant Fluctuations on Si-Based 3nm NSFET: A NEGF Analysis

Automated Algorithmic Parameter Extraction of TCAD-Based SPAD SPICE Models

Sensitivity and Reliability Assessment of a Strained Silicon Junctionless FinFET-based Hydrogen Gas Sensor

Simulation of Si nanowire quantum-dot devices for authentication

Nanowire FETs

Self-consistent physical modeling of SiOx-based RRAM structures

Variability study of high current junctionless silicon nanowire transistors

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