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Gate-Sensing Coherent Charge Oscillations in a Silicon Field-Effect Transistor

Nano letters, 2016-03, Vol.16 (3), p.1614-1619

2016

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Few-Electron Edge-State Quantum Dots in a Silicon Nanowire Field-Effect Transistor

Nano letters, 2014-04, Vol.14 (4), p.2094-2098

2014

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Electrically driven electron spin resonance mediated by spin–valley–orbit coupling in a silicon quantum dot

npj quantum information, 2018-02, Vol.4 (1), p.1-7, Article 6

2018

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Mobility enhancement effect in heavily doped junctionless nanowire silicon-on-insulator metal-oxide-semiconductor field-effect transistors

Applied physics letters, 2012-11, Vol.101 (21), p.213502

2012

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pH Quantification in Human Dermal Interstitial Fluid Using Ultra-Thin SOI Silicon Nanowire ISFETs and a High-Sensitivity Constant-Current Approach

Biosensors (Basel), 2023-09, Vol.13 (10), p.908

2023

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Dopant-controlled single-electron pumping through a metallic island

Applied physics letters, 2016-05, Vol.108 (21)

2016

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Charge Dynamics and Spin Blockade in a Hybrid Double Quantum Dot in Silicon

Physical review. X, 2015-08, Vol.5 (3), p.031024, Article 031024

2015

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Primary thermometry of a single reservoir using cyclic electron tunneling to a quantum dot

Communications physics, 2018-10, Vol.1 (1), Article 66

2018

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Strain-Induced Performance Enhancement of Trigate and Omega-Gate Nanowire FETs Scaled Down to 10-nm Width

IEEE transactions on electron devices, 2013-02, Vol.60 (2), p.727-732

2013

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IEEE_Xplore

A silicon-based single-electron interferometer coupled to a fermionic sea

Physical review. B, 2018-01, Vol.97 (4), Article 045405

2018

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Channel-Width-Dependent Mobility Degradation in Bulk Conduction Regime of Tri-Gate Junctionless Transistors

IEEE transactions on electron devices, 2022-06, Vol.69 (6), p.3037-3041

2022

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IEEE_Xplore

Impact of Channel Length on the Operation of Junctionless Transistors With Substrate Biasing

IEEE transactions on electron devices, 2021-06, Vol.68 (6), p.3070-3073

2021

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IEEE_Xplore

Controlling the Effective Channel Thickness of Junctionless Transistors by Substrate Bias

IEEE transactions on electron devices, 2020-11, Vol.67 (11), p.4736-4740

2020

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IEEE_Xplore

Variability Modeling in Triple-Gate Junctionless Nanowire Transistors

IEEE transactions on electron devices, 2022-08, Vol.69 (8), p.4730-4736

2022

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IEEE_Xplore

A Simple Interpolation Model for the Carrier Mobility in Trigate and Gate-All-Around Silicon NWFETs

IEEE transactions on electron devices, 2017-06, Vol.64 (6), p.2485-2491

2017

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IEEE_Xplore

On the Application of Junctionless Nanowire Transistors in Basic Analog Building Blocks

IEEE transactions on nanotechnology, 2021, Vol.20, p.234-242

2021

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IEEE_Xplore

Analytical Drain Current Compact Model in the Depletion Operation Region of Short-Channel Triple-Gate Junctionless Transistors

IEEE transactions on electron devices, 2017-01, Vol.64 (1), p.66-72

2017

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IEEE_Xplore

Level Spectrum and Charge Relaxation in a Silicon Double Quantum Dot Probed by Dual-Gate Reflectometry

Nano letters, 2017-02, Vol.17 (2), p.1001-1006

2017

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All-Electrical Control of a Hybrid Electron Spin/Valley Quantum Bit in SOI CMOS Technology

IEEE transactions on electron devices, 2018-11, Vol.65 (11), p.5151-5156

2018

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IEEE_Xplore

SET Sensitivity of Trigate Silicon Nanowire Field-Effect Transistors

IEEE transactions on nuclear science, 2019-01, Vol.66 (1), p.352-358

2019

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IEEE_Xplore

A New Method for Series Resistance Extraction of Nanometer MOSFETs

IEEE transactions on electron devices, 2017-07, Vol.64 (7), p.2797-2803

2017

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IEEE_Xplore

Quantum Dot Made in Metal Oxide Silicon-Nanowire Field Effect Transistor Working at Room Temperature

Nano letters, 2015-05, Vol.15 (5), p.2958-2964

2015

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Top-Down Fabrication of Epitaxial SiGe/Si Multi-(Core/Shell) p-FET Nanowire Transistors

IEEE transactions on electron devices, 2014-04, Vol.61 (4), p.953-956

2014

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IEEE_Xplore

Analysis of Nanowire Field-Effect Transistors SET Response: Geometrical Considerations

IEEE transactions on nuclear science, 2019-07, Vol.66 (7), p.1410-1417

2019

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IEEE_Xplore

Enhanced Performance of P-FET Omega-Gate SoI Nanowire With Recessed-SiGe Source-Drain Down to 13-nm Gate Length

IEEE electron device letters, 2013-09, Vol.34 (9), p.1103-1105

2013

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IEEE_Xplore

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Gate-Sensing Coherent Charge Oscillations in a Silicon Field-Effect Transistor

Few-Electron Edge-State Quantum Dots in a Silicon Nanowire Field-Effect Transistor

Electrically driven electron spin resonance mediated by spin–valley–orbit coupling in a silicon quantum dot

Mobility enhancement effect in heavily doped junctionless nanowire silicon-on-insulator metal-oxide-semiconductor field-effect transistors

pH Quantification in Human Dermal Interstitial Fluid Using Ultra-Thin SOI Silicon Nanowire ISFETs and a High-Sensitivity Constant-Current Approach

Dopant-controlled single-electron pumping through a metallic island

Charge Dynamics and Spin Blockade in a Hybrid Double Quantum Dot in Silicon

Primary thermometry of a single reservoir using cyclic electron tunneling to a quantum dot

Strain-Induced Performance Enhancement of Trigate and Omega-Gate Nanowire FETs Scaled Down to 10-nm Width

A silicon-based single-electron interferometer coupled to a fermionic sea

Channel-Width-Dependent Mobility Degradation in Bulk Conduction Regime of Tri-Gate Junctionless Transistors

Impact of Channel Length on the Operation of Junctionless Transistors With Substrate Biasing

Controlling the Effective Channel Thickness of Junctionless Transistors by Substrate Bias

Variability Modeling in Triple-Gate Junctionless Nanowire Transistors

A Simple Interpolation Model for the Carrier Mobility in Trigate and Gate-All-Around Silicon NWFETs

On the Application of Junctionless Nanowire Transistors in Basic Analog Building Blocks

Analytical Drain Current Compact Model in the Depletion Operation Region of Short-Channel Triple-Gate Junctionless Transistors

Level Spectrum and Charge Relaxation in a Silicon Double Quantum Dot Probed by Dual-Gate Reflectometry

All-Electrical Control of a Hybrid Electron Spin/Valley Quantum Bit in SOI CMOS Technology

SET Sensitivity of Trigate Silicon Nanowire Field-Effect Transistors

A New Method for Series Resistance Extraction of Nanometer MOSFETs

Quantum Dot Made in Metal Oxide Silicon-Nanowire Field Effect Transistor Working at Room Temperature

Top-Down Fabrication of Epitaxial SiGe/Si Multi-(Core/Shell) p-FET Nanowire Transistors

Analysis of Nanowire Field-Effect Transistors SET Response: Geometrical Considerations

Enhanced Performance of P-FET Omega-Gate SoI Nanowire With Recessed-SiGe Source-Drain Down to 13-nm Gate Length

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