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Multilevel HfO2-based RRAM devices for low-power neuromorphic networks

APL materials, 2019-08, Vol.7 (8), p.081120-081120-10

2019

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Analysis of the statistics of device-to-device and cycle-to-cycle variability in TiN/Ti/Al:HfO2/TiN RRAMs

Microelectronic engineering, 2019-06, Vol.214, p.104-109

2019

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MIM capacitors using amorphous high-k PrTixOy dielectrics

Microelectronic engineering, 2005-06, Vol.80, p.313-316

2005

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Assessing the forming temperature role on amorphous and polycrystalline HfO2-based 4 kbit RRAM arrays performance

Microelectronic engineering, 2017-06, Vol.178, p.1-4

2017

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On the role of Ti adlayers for resistive switching in HfO2-based metal-insulator-metal structures: Top versus bottom electrode integration

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2011-01, Vol.29 (1), p.1

2011

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Resistive switching characteristics of CMOS embedded HfO2-based 1T1R cells

Microelectronic engineering, 2011-07, Vol.88 (7), p.1133-1135

2011

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Crosstalk suppression of CMOS compatible AlN based SAW devices on low resistive Si(100)

Physica status solidi. C, 2014-02, Vol.11 (2), p.249-252

2014

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Chemical vapor deposition and characterization of high-k BaHf1−xTixO3 dielectric layers for microelectronic applications

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2011-01, Vol.29 (1), p.1

2011

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ALD grown NbTaOx based MIM capacitors

Microelectronic engineering, 2011-08, Vol.88 (8), p.2447-2451

2011

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Electrical characteristics of Ti–Ta–O based MIM capacitors

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2011-01, Vol.29 (1)

2011

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Single SrTiO3 and Al2O3/SrTiO3/Al2O3 based MIM capacitors: Impact of the bottom electrode material

Microelectronic engineering, 2011-07, Vol.88 (7), p.1521-1524

2011

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Influence of the electrode material on HfO2 metal-insulator-metal capacitors

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2009-01, Vol.27 (1), p.286-289

2009

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Metal–insulator–metal capacitors with MOCVD grown Ce–Al–O as a dielectric

Microelectronic engineering, 2011-07, Vol.88 (7), p.1529-1532

2011

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Investigations of thermal annealing effects on electrical and structural properties of SrTaO based MIM capacitor

Microelectronic engineering, 2010, Vol.87 (12), p.2561-2564

2010

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Ge integration on Si via rare earth oxide buffers: From MBE to CVD (Invited Paper)

Microelectronic engineering, 2009-07, Vol.86 (7), p.1615-1620

2009

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Atomic -vapour -deposited HfO2 and Sr4Ta2O9 layers for metal-insulator-metal applications

Microelectronic engineering, 2007-09, Vol.84 (9-10), p.2165-2168

2007

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Process integration of Pr-based high- k gate dielectrics

Microelectronic engineering, 2005-10, Vol.82 (2), p.148-153

2005

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Structure and defects of epitaxial Si(111) layers on Y2O3(111)/Si(111) support systems

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2009-01, Vol.27 (1), p.305-309

2009

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Dielectric characteristics of amorphous and crystalline BaHfO3 high-k layers on TiN for memory capacitor applications

2008 9th International Conference on Ultimate Integration of Silicon, 2008, p.159-162

2008

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Multilevel HfO2-based RRAM devices for low-power neuromorphic networks

Analysis of the statistics of device-to-device and cycle-to-cycle variability in TiN/Ti/Al:HfO2/TiN RRAMs

MIM capacitors using amorphous high-k PrTixOy dielectrics

Assessing the forming temperature role on amorphous and polycrystalline HfO2-based 4 kbit RRAM arrays performance

On the role of Ti adlayers for resistive switching in HfO2-based metal-insulator-metal structures: Top versus bottom electrode integration

Resistive switching characteristics of CMOS embedded HfO2-based 1T1R cells

Crosstalk suppression of CMOS compatible AlN based SAW devices on low resistive Si(100)

Chemical vapor deposition and characterization of high-k BaHf1−xTixO3 dielectric layers for microelectronic applications

ALD grown NbTaOx based MIM capacitors

Electrical characteristics of Ti–Ta–O based MIM capacitors

Single SrTiO3 and Al2O3/SrTiO3/Al2O3 based MIM capacitors: Impact of the bottom electrode material

Influence of the electrode material on HfO2 metal-insulator-metal capacitors

Metal–insulator–metal capacitors with MOCVD grown Ce–Al–O as a dielectric

Investigations of thermal annealing effects on electrical and structural properties of SrTaO based MIM capacitor

Ge integration on Si via rare earth oxide buffers: From MBE to CVD (Invited Paper)

Atomic -vapour -deposited HfO2 and Sr4Ta2O9 layers for metal-insulator-metal applications

Process integration of Pr-based high- k gate dielectrics

Structure and defects of epitaxial Si(111) layers on Y2O3(111)/Si(111) support systems

Dielectric characteristics of amorphous and crystalline BaHfO3 high-k layers on TiN for memory capacitor applications

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