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Effective-Work-Function Control by Varying the TiN Thickness in Poly-Si/TiN Gate Electrodes for Scaled High- k CMOSFETs

IEEE electron device letters, 2009-05, Vol.30 (5), p.466-468

2009

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Depth and lateral resolution of laser-assisted atom probe microscopy of silicon revealed by isotopic heterostructures

Journal of applied physics, 2011-02, Vol.109 (3)

2011

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Capsule endoscopy findings in intestinal follicular lymphoma

Endoscopy, 2007-12, Vol.39 (S 1), p.E86-E87

2007

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Flat adenoma-carcinoma sequence with high-malignancy potential as demonstrated by CD10 and β-catenin expression: a different pathway from the polypoid adenoma-carcinoma sequence

Histopathology, 2008-04, Vol.52 (5), p.569-577

2008

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Proposal of Single Metal/Dual High- k Devices for Aggressively Scaled CMISFETs With Precise Gate Profile Control

IEEE transactions on electron devices, 2009-01, Vol.56 (1), p.85-92

2009

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A case of multiple carcinoid tumors of the small intestine

Endoscopy, 2009-11, Vol.41 Suppl 2 (S 02), p.E299-E300

2009

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Compact modeling of a flash memory cell including substrate-bias-dependent hot-electron gate current

IEEE transactions on electron devices, 2004-10, Vol.51 (10), p.1726-1733

2004

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Suppression of anomalous threshold voltage increase with area scaling for Mg- or La-incorporated high-k/Metal gate nMISFETs in deeply scaled region

2010 Symposium on VLSI Technology, 2010, p.33-34

2010

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Clinical impact of genetic aberrations in gastric MALT lymphoma: a comprehensive analysis using interphase fluorescence in situ hybridisation

Gut, 2007-10, Vol.56 (10), p.1358-1363

2007

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Reduction of current leakage in chemical-vapor deposited Ta2O5 thin-films by oxygen-radical annealing [DRAM dielectric]

IEEE electron device letters, 1996-09, Vol.17 (9), p.431-433

1996

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Positronium formation in SiO2 films grown on Si substrates studied by monoenergetic positron beams

Journal of applied physics, 1994-04, Vol.75 (8), p.3822-3828

1994

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Silicon on thin BOX: a new paradigm of the CMOSFET for low-power high-performance application featuring wide-range back-bias control

IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004, 2004, p.631-634

2004

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Probe EUS for the diagnosis of invasion depth in superficial esophageal cancer: a comparison between a jelly-filled method and a water-filled balloon method

Gastrointestinal endoscopy, 2006-03, Vol.63 (3), p.389-395

2006

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Simulation of Drain Current Reduction Caused by Process-Induced Stress

2005 International Conference On Simulation of Semiconductor Processes and Devices, 2005, p.199-202

2005

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Hot-electron hardened Si-gate MOSFET utilizing F implantation

IEEE electron device letters, 1989-04, Vol.10 (4), p.141-143

1989

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Ultralow-Thermal-Budget CMOS Process Using Flash-Lamp Annealing for 45 nm Metal/High- k FETs

IEEE transactions on electron devices, 2008-04, Vol.55 (4), p.1042-1049

2008

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Stoichiometry measurement and electric characteristics of thin-film Ta2O5 insulator for ultra-large-scale integration

Journal of applied physics, 1993-07, Vol.74 (1), p.375-380

1993

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NBT-induced hot carrier (HC) effect: positive feedback mechanism in p-MOSFET's degradation

2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320), 2002, p.79-85

2002

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Positron annihilation in a metal-oxide semiconductor studied by using a pulsed monoenergetic positron beam

Journal of applied physics, 1993-12, Vol.74 (12), p.7251-7256

1993

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256-Mb DRAM circuit technologies for file applications

IEEE journal of solid-state circuits, 1993-11, Vol.28 (11), p.1105-1113

1993

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Impact of boron penetration from S/D-extension on gate-oxide reliability for 65-nm node CMOS and beyond

Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004, 2004, p.136-137

2004

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Metal/oxide/semiconductor interface investigated by monoenergetic positrons

Physics letters. A, 1988-10, Vol.133 (1), p.82-84

1988

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Gate-oxide breakdown accelerated by large drain current in n-channel MOSFET's

IEEE electron device letters, 1991-03, Vol.12 (3), p.134-136

1991

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Systematic study of the relationship between 1/ƒ noise, interface state defects and mobility ddgradtion of high-K /metal CMOSFETs on (110) and (100) substrate

2009 IEEE International Reliability Physics Symposium, 2009, p.45-50

2009

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VLSI reliability challenges: from device physics to wafer scale systems

Proceedings of the IEEE, 1993-05, Vol.81 (5), p.653-674

1993

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Effective-Work-Function Control by Varying the TiN Thickness in Poly-Si/TiN Gate Electrodes for Scaled High- k CMOSFETs

Depth and lateral resolution of laser-assisted atom probe microscopy of silicon revealed by isotopic heterostructures

Capsule endoscopy findings in intestinal follicular lymphoma

Flat adenoma-carcinoma sequence with high-malignancy potential as demonstrated by CD10 and β-catenin expression: a different pathway from the polypoid adenoma-carcinoma sequence

Proposal of Single Metal/Dual High- k Devices for Aggressively Scaled CMISFETs With Precise Gate Profile Control

A case of multiple carcinoid tumors of the small intestine

Compact modeling of a flash memory cell including substrate-bias-dependent hot-electron gate current

Suppression of anomalous threshold voltage increase with area scaling for Mg- or La-incorporated high-k/Metal gate nMISFETs in deeply scaled region

Clinical impact of genetic aberrations in gastric MALT lymphoma: a comprehensive analysis using interphase fluorescence in situ hybridisation

Reduction of current leakage in chemical-vapor deposited Ta2O5 thin-films by oxygen-radical annealing [DRAM dielectric]

Positronium formation in SiO2 films grown on Si substrates studied by monoenergetic positron beams

Silicon on thin BOX: a new paradigm of the CMOSFET for low-power high-performance application featuring wide-range back-bias control

Probe EUS for the diagnosis of invasion depth in superficial esophageal cancer: a comparison between a jelly-filled method and a water-filled balloon method

Simulation of Drain Current Reduction Caused by Process-Induced Stress

Hot-electron hardened Si-gate MOSFET utilizing F implantation

Ultralow-Thermal-Budget CMOS Process Using Flash-Lamp Annealing for 45 nm Metal/High- k FETs

Stoichiometry measurement and electric characteristics of thin-film Ta2O5 insulator for ultra-large-scale integration

NBT-induced hot carrier (HC) effect: positive feedback mechanism in p-MOSFET's degradation

Positron annihilation in a metal-oxide semiconductor studied by using a pulsed monoenergetic positron beam

256-Mb DRAM circuit technologies for file applications

Impact of boron penetration from S/D-extension on gate-oxide reliability for 65-nm node CMOS and beyond

Metal/oxide/semiconductor interface investigated by monoenergetic positrons

Gate-oxide breakdown accelerated by large drain current in n-channel MOSFET's

Systematic study of the relationship between 1/ƒ noise, interface state defects and mobility ddgradtion of high-K /metal CMOSFETs on (110) and (100) substrate

VLSI reliability challenges: from device physics to wafer scale systems

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