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1/f Electrical Noise in Planar Resistors: The Joint Effect of a Backgating Noise and an Instrumental Disturbance

IEEE transactions on instrumentation and measurement, 2008-03, Vol.57 (3), p.509-517

Izpura, J.-I.

2008

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III-Nitride-based junction devices round contacts: effect of semiconductor film geometry and characteristics on the capacitance and conductance measurements

Journal of materials science. Materials in electronics, 2019-06, Vol.30 (12), p.11164-11170

2019

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Simulation of surface state effects in the transient response of AlGaN/GaN HEMT and GaN MESFET devices

Semiconductor science and technology, 2006-08, Vol.21 (8), p.1150-1159

2006

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Photoconductor gain mechanisms in GaN ultraviolet detectors

Applied physics letters, 1997-08, Vol.71 (7), p.870-872

1997

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Drain current collapse in GaN metal–semiconductor field-effect transistors due to surface band-bending effects

Semiconductor science and technology, 2002-12, Vol.17 (12), p.1293-1301

Izpura, J I

2002

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2D simulation of static surface states in AlGaN/GaN HEMT and GaN MESFET devices

Semiconductor science and technology, 2005-08, Vol.20 (8), p.864-869

2005

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1/ f electrical noise due to space charge regions

Journal of the European Ceramic Society, 2007, Vol.27 (13), p.4011-4015

Izpura, J.I.

2007

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Side contact effects on the capacitance properties of junction devices. Application to III-nitrogen structures

Semiconductor science and technology, 2001-04, Vol.16 (4), p.243-249

Izpura, J I

2001

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On the Electrical Origin of Flicker Noise in Vacuum Devices

IEEE transactions on instrumentation and measurement, 2009-10, Vol.58 (10), p.3592-3601

Izpura, J.I.

2009

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Low frequency noise and screening effects in AlGaN/GaN HEMTs

Electronics letters, 1998-11, Vol.34 (24), p.2357-2359

1998

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Observation of the pyroelectric effect in strained piezoelectric InGaAs/GaAs quantum-wells grown on (111) GaAs substrates

Microelectronics, 2002-07, Vol.33 (7), p.531-534

2002

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Techniques to minimize DX center deleterious effects in III-V device performance

Journal of applied physics, 1993-05, Vol.73 (10), p.4988-4997

1993

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Influence of the surface morphology on the relaxation of low-strained InxGa1-xAs linear buffer structures

Journal of crystal growth, 1997-12, Vol.182 (3-4), p.281-291

1997

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Influence of substrate misorientation on the structural characteristics of InGaAs/GaAs MQW on (111)B GaAs grown by MBE

Thin solid films, 1999, Vol.343, p.558-561

1999

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Surface band-bending assessment by photocurrent techniques. Application to III - V semiconductors

Semiconductor science and technology, 1997-06, Vol.12 (6), p.678-686

1997

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Relaxation study of InxGa1-xAs/GaAs quantum-well structures grown by MBE on (0 0 1) and (1 11)B GaAs for long wavelength applications

Journal of crystal growth, 1999-11, Vol.206 (4), p.287-293

1999

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Structural and morphological characteristics of InGaAs/GaAs quantum well structures on tilted (1 1 1)B GaAs grown by MBE

Journal of crystal growth, 1998-09, Vol.192 (3), p.363-371

1998

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Piezoelectric-induced current asymmetry in [111] InGaAs/InAlAs resonant tunneling diodes for microwave mixing

Applied physics letters, 1993-08, Vol.63 (6), p.773-775

1993

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A critical analysis of capacitance transient signals due to DX centres in n-type AlGaAs

Semiconductor science and technology, 1993-07, Vol.8 (7), p.1258-1266

1993

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On the spectroscopy of DX centres by transient techniques at constant capacitance

Semiconductor science and technology, 1995-01, Vol.10 (1), p.25-31

1995

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Time response analysis of ZnSe-based Schottky barrier photodetectors

Applied physics letters, 2000-10, Vol.77 (17), p.2761-2763

2000

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Influence of refilling effects on deep-level transient spectroscopy measurements in Se-doped AlxGa1-xAs

Journal of applied physics, 1992-07, Vol.72 (2), p.525-530

1992

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Piezoelectric field determination in strained InGaAs quantum wells grown on [111]B GaAs substrates by differential photocurrent

Microelectronics, 1999-04, Vol.30 (4-5), p.439-444

1999

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Characterization of the DX centers in AlGaAs:Si by admittance spectroscopy

Journal of applied physics, 1991-04, Vol.69 (8), p.4300-4305

1991

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Transient negative photocurrent and out-of-well dipole kinetics in novel piezoelectric InGaAs/GaAs MQW pin diodes

Solid-state electronics, 1996-01, Vol.40 (1-8), p.463-467

1996

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1/f Electrical Noise in Planar Resistors: The Joint Effect of a Backgating Noise and an Instrumental Disturbance

III-Nitride-based junction devices round contacts: effect of semiconductor film geometry and characteristics on the capacitance and conductance measurements

Simulation of surface state effects in the transient response of AlGaN/GaN HEMT and GaN MESFET devices

Photoconductor gain mechanisms in GaN ultraviolet detectors

Drain current collapse in GaN metal–semiconductor field-effect transistors due to surface band-bending effects

2D simulation of static surface states in AlGaN/GaN HEMT and GaN MESFET devices

1/ f electrical noise due to space charge regions

Side contact effects on the capacitance properties of junction devices. Application to III-nitrogen structures

On the Electrical Origin of Flicker Noise in Vacuum Devices

Low frequency noise and screening effects in AlGaN/GaN HEMTs

Observation of the pyroelectric effect in strained piezoelectric InGaAs/GaAs quantum-wells grown on (111) GaAs substrates

Techniques to minimize DX center deleterious effects in III-V device performance

Influence of the surface morphology on the relaxation of low-strained InxGa1-xAs linear buffer structures

Influence of substrate misorientation on the structural characteristics of InGaAs/GaAs MQW on (111)B GaAs grown by MBE

Surface band-bending assessment by photocurrent techniques. Application to III - V semiconductors

Relaxation study of InxGa1-xAs/GaAs quantum-well structures grown by MBE on (0 0 1) and (1 11)B GaAs for long wavelength applications

Structural and morphological characteristics of InGaAs/GaAs quantum well structures on tilted (1 1 1)B GaAs grown by MBE

Piezoelectric-induced current asymmetry in [111] InGaAs/InAlAs resonant tunneling diodes for microwave mixing

A critical analysis of capacitance transient signals due to DX centres in n-type AlGaAs

On the spectroscopy of DX centres by transient techniques at constant capacitance

Time response analysis of ZnSe-based Schottky barrier photodetectors

Influence of refilling effects on deep-level transient spectroscopy measurements in Se-doped AlxGa1-xAs

Piezoelectric field determination in strained InGaAs quantum wells grown on [111]B GaAs substrates by differential photocurrent

Characterization of the DX centers in AlGaAs:Si by admittance spectroscopy

Transient negative photocurrent and out-of-well dipole kinetics in novel piezoelectric InGaAs/GaAs MQW pin diodes

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