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Application Relevant Evaluation of Trapping Effects in AlGaN/GaN HEMTs With Fe-Doped Buffer

IEEE transactions on electron devices, 2016-01, Vol.63 (1), p.326-332

2016

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Electroluminescence of hot electrons in AlGaN/GaN high-electron-mobility transistors under radio frequency operation

Applied physics letters, 2015-05, Vol.106 (21)

2015

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Transconductance Overshoot, a New Trap-Related Effect in AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2023-06, Vol.70 (6), p.1-6

2023

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Impact of in situ NH3 pre-treatment of LPCVD SiN passivation on GaN HEMT performance

Semiconductor science and technology, 2022, Vol.37 (3)

2022

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Study of the influence of gate etching and passivation on current dispersion, trapping and reliability in RF 0.15 μm AlGaN/GaN HEMTs

Microelectronics and reliability, 2022-11, Vol.138, p.114735, Article 114735

2022

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Improvement of Ohmic Contact for InAlGaN/AlN/GaN HEMTs with Recess Etching

Physica status solidi. A, Applications and materials science, 2018-04, Vol.215 (8), p.n/a

2018

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Impact of an AlGaN spike in the buffer in 0.15 μm AlGaN/GaN HEMTs during step stress

Microelectronics and reliability, 2021-11, Vol.126, p.114318, Article 114318

2021

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Transient Thermoreflectance for Gate Temperature Assessment in Pulse Operated GaN-Based HEMTs

IEEE electron device letters, 2016-09, Vol.37 (9), p.1197-1200

2016

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Reliability studies on GaN HEMTs with sputtered Iridium gate module

Microelectronics and reliability, 2012-09, Vol.52 (9-10), p.2144-2148

2012

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Study of hot electrons in AlGaN/GaN HEMTs under RF Class B and Class J operation using electroluminescence

Microelectronics and reliability, 2015-12, Vol.55 (12), p.2493-2498

2015

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GaAs Industry in Europe--Technologies, Trends and New Developments

IEICE transactions on electronics, 2008-01, Vol.E91-C (7), p.1076-1083

2008

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Reliability behavior of GaN HEMTs related to Au diffusion at the Schottky interface

Physica status solidi. C, 2009-06, Vol.6 (S2), p.S976-S979

2009

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Hot-Electron Electroluminescence Under RF Operation in GaN-HEMTs: A Comparison Among Operational Classes

IEEE transactions on electron devices, 2017-05, Vol.64 (5), p.2155-2160

2017

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GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse

2022 IEEE International Reliability Physics Symposium (IRPS), 2022, p.11B.4-1-11B.4-6

2022

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Output capacitance on GaN HEMTs in correlation to its transistor geometry and sheet resistance

Physica status solidi. C, 2014-02, Vol.11 (3-4), p.940-944

2014

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Industrial GaN FET technology

International journal of microwave and wireless technologies, 2010-02, Vol.2 (1), p.21-32

2010

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Boron implantation into GaAs/Ga0.5In0.5P heterostructures

Japanese journal of applied physics, 1997, Vol.36 (1A), p.175-180

1997

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Low-threshold GaAs/AlGaAs graded-index separate confinement heterostructure lasers grown by molecular beam epitaxy on oxide-masked Si substrates

Applied physics letters, 1990-06, Vol.56 (25), p.2499-2501

1990

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Molecular Cloning, cDNA Analysis, and Localization of a Monomer of the N-Acetylglucosamine-Specific Receptor of the Thyroid, NAGR1, to Chromosome 19p13.3-13.2

Genomics (San Diego, Calif.), 1994-05, Vol.21 (1), p.18-26

1994

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Application Relevant Evaluation of Trapping Effects in AlGaN/GaN HEMTs With Fe-Doped Buffer

Electroluminescence of hot electrons in AlGaN/GaN high-electron-mobility transistors under radio frequency operation

Transconductance Overshoot, a New Trap-Related Effect in AlGaN/GaN HEMTs

Impact of in situ NH3 pre-treatment of LPCVD SiN passivation on GaN HEMT performance

Study of the influence of gate etching and passivation on current dispersion, trapping and reliability in RF 0.15 μm AlGaN/GaN HEMTs

Improvement of Ohmic Contact for InAlGaN/AlN/GaN HEMTs with Recess Etching

Impact of an AlGaN spike in the buffer in 0.15 μm AlGaN/GaN HEMTs during step stress

Transient Thermoreflectance for Gate Temperature Assessment in Pulse Operated GaN-Based HEMTs

Reliability studies on GaN HEMTs with sputtered Iridium gate module

Study of hot electrons in AlGaN/GaN HEMTs under RF Class B and Class J operation using electroluminescence

GaAs Industry in Europe--Technologies, Trends and New Developments

Reliability behavior of GaN HEMTs related to Au diffusion at the Schottky interface

Hot-Electron Electroluminescence Under RF Operation in GaN-HEMTs: A Comparison Among Operational Classes

GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse

Output capacitance on GaN HEMTs in correlation to its transistor geometry and sheet resistance

Industrial GaN FET technology

Boron implantation into GaAs/Ga0.5In0.5P heterostructures

Low-threshold GaAs/AlGaAs graded-index separate confinement heterostructure lasers grown by molecular beam epitaxy on oxide-masked Si substrates

Molecular Cloning, cDNA Analysis, and Localization of a Monomer of the N-Acetylglucosamine-Specific Receptor of the Thyroid, NAGR1, to Chromosome 19p13.3-13.2

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