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Critical Voltage for Electrical Degradation of GaN High-Electron Mobility Transistors
IEEE electron device letters, 2008-04, Vol.29 (4), p.287-289
2008
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A model for the critical voltage for electrical degradation of GaN high electron mobility transistors
Microelectronics and reliability, 2010-06, Vol.50 (6), p.767-773
2010
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Current collapse in GaN heterojunction field effect transistors for high-voltage switching applications
2014 IEEE International Reliability Physics Symposium, 2014, p.6C.5.1-6C.5.4
2014
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High voltage degradation of GaN High Electron Mobility Transistors on silicon substrate
Microelectronics and reliability, 2010-06, Vol.50 (6), p.758-762
2010
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Time evolution of electrical degradation under high-voltage stress in GaN high electron mobility transistors
2011 International Reliability Physics Symposium, 2011, p.4E.3.1-4E.3.4
2011
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Mission Profile Approach for the Calculation of GaN FET Reliability in Power Supply Applications (Invited)
2024 IEEE International Reliability Physics Symposium (IRPS), 2024, p.1-7
2024
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Strapped Cu interconnect for enhancing electromigration limit for power device application
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2020, p.368-371
2020
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A Simple Current Collapse Measurement Technique for GaN High-Electron Mobility Transistors
IEEE electron device letters, 2008-07, Vol.29 (7), p.665-667
2008
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Current Crowding Impact on Electromigration in Al Interconnects
2019 IEEE International Reliability Physics Symposium (IRPS), 2019, p.1-6
2019
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Electromigration current limit relaxation for power device interconnects
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2018, p.68-71
2018
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Traps and defects in pre- and post- stressed AlGaN-GaN high electron mobility transistors
Physica status solidi. A, Applications and materials science, 2011-07, Vol.208 (7), p.1611-1613
2011
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RF power degradation of GaN High Electron Mobility Transistors
2010 International Electron Devices Meeting, 2010, p.20.2.1-20.2.4
2010
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