UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Macroscale stress induced stabilization of coherent precipitates

Journal of crystal growth, 2022-06, Vol.588, p.126667, Article 126667

2022

Volltextzugriff (PDF)

Deformation Mechanisms Dominated by Decomposition of an Interfacial Misfit Dislocation Network in Ni/Ni3Al Multilayer Structures

Materials, 2024-08, Vol.17 (16), p.4006

2024

Volltextzugriff (PDF)

A theoretical investigation of glide dislocations in BN/AlN heterojunctions

Chinese physics B, 2022-10, Vol.31 (11), p.116101-462

Zhang, Shujun

2022

Volltextzugriff (PDF)

Transition from Screw-Type to Edge-Type Misfit Dislocations at InGaN/GaN Heterointerfaces

Crystals (Basel), 2023-07, Vol.13 (7), p.1027

2023

Volltextzugriff (PDF)

Regular Network of Misfit Dislocations at the BaZr0.8Y0.2O3−x/NdGaO3 Interface and Its Role in Proton Conductivity

physica status solidi (b), 2019-03, Vol.256 (3), p.n/a

2019

Volltextzugriff (PDF)

Modification of the Peierls–Nabarro model for misfit dislocation

Chinese physics B, 2020-05, Vol.29 (5), p.56102

2020

Volltextzugriff (PDF)

Full-Field Strain Mapping at a Ge/Si Heterostructure Interface

Materials, 2013-05, Vol.6 (6), p.2130-2142

2013

Volltextzugriff (PDF)

Theoretical Investigations for Strain Relaxation and Growth Mode of InAs Thin layers on GaAs(111)A

Condensed matter, 2016-12, Vol.1 (1), p.4

2016

Volltextzugriff (PDF)

Enhanced Sn incorporation in GeSn epitaxial semiconductors via strain relaxation

Journal of applied physics, 2019-01, Vol.125 (2)

2019

Volltextzugriff (PDF)

Atomic study of fracture progress of Fe [110]/ TMC [100] ( TM = Ti , Zr and Hf ) semi-coherent interfaces

Modern physics letters. B, Condensed matter physics, statistical physics, applied physics, 2014-09, Vol.28 (24), p.1450192

2014

Volltextzugriff (PDF)

High-temperature annealing induced evolution of strain in AlN epitaxial films grown on sapphire substrates

Applied physics letters, 2019-03, Vol.114 (11)

2019

Volltextzugriff (PDF)

Optimizing misfit dislocation glide kinetics for enhanced threading dislocation density reduction in Si1−xGex/Si(001) layers through dynamic growth rate control

Journal of applied physics, 2024-05, Vol.135 (20)

2024

Volltextzugriff (PDF)

Defect filtering for thermal expansion induced dislocations in III–V lasers on silicon

Applied physics letters, 2020-09, Vol.117 (12)

2020

Volltextzugriff (PDF)

Dislocation nucleation facilitated by atomic segregation

Nature materials, 2018-01, Vol.17 (1), p.56-63

2018

Volltextzugriff (PDF)

Graphite, Graphene, and the Flat Band Superconductivity

JETP letters, 2018-04, Vol.107 (8), p.516-517

Volovik, G. E.

2018

Volltextzugriff (PDF)

Behavior of misfit dislocations in semipolar InGaN/GaN grown by MOVPE

Physica status solidi. C, 2012-03, Vol.9 (3-4), p.488-491

2012

Volltextzugriff (PDF)

Sub-nanometre channels embedded in two-dimensional materials

Nature materials, 2018-02, Vol.17 (2), p.129-133

2018

Volltextzugriff (PDF)

Germanium-on-silicon nitride waveguides for mid-infrared integrated photonics

Applied physics letters, 2016-12, Vol.109 (24)

2016

Volltextzugriff (PDF)

Interband cascade light-emitting diodes grown on silicon substrates using GaSb buffer layer

Applied physics letters, 2024-07, Vol.125 (1)

2024

Volltextzugriff (PDF)

Misfit dislocation structure and thermal boundary conductance of GaN/AlN interfaces

Journal of applied physics, 2021-07, Vol.130 (3)

2021

Volltextzugriff (PDF)

Resistivity size effect in epitaxial iridium layers

Journal of applied physics, 2021-09, Vol.130 (11)

2021

Volltextzugriff (PDF)

Non-radiative recombination at dislocations in InAs quantum dots grown on silicon

Applied physics letters, 2019-09, Vol.115 (13)

2019

Volltextzugriff (PDF)

Large thickness dependence of the carrier mobility in a transparent oxide semiconductor, La-doped BaSnO3

Applied physics letters, 2018-06, Vol.112 (23)

2018

Volltextzugriff (PDF)

Reduced dislocation growth leads to long lifetime InAs quantum dot lasers on silicon at high temperatures

Applied physics letters, 2021-05, Vol.118 (19)

2021

Volltextzugriff (PDF)

Strain suppressed Sn incorporation in GeSn epitaxially grown on Ge/Si(001) substrate

Applied physics letters, 2020-06, Vol.116 (23)

2020

Volltextzugriff (PDF)

1 – 25 von 738

Suche als RSS-Feed

Aktive Filter

ThemaPhysics

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(681)
Mit Volltextzugriff
(674)

Publikationsform

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(681)
Physical Sciences
(626)
Misfit Dislocations
(539)
Physics, Applied
(485)
Materials Science
(433)
Technology
(424)
Materials Science, Multidisciplinary
(372)
Physics, Condensed Matter
(220)
Dislocations
(200)
Exact Sciences And Technology
(168)
Substrates
(135)
Chemistry
(122)
Condensed Matter: Structure, Mechanical And Thermal Properties
(120)
Epitaxial Growth
(116)
Engineering
(110)
Thin Films
(109)
Applied Physics
(105)
Misfit Dislocation
(105)
Molecular Beam Epitaxy
(102)

14 weitere anzeigen...

Weniger anzeigen...

Zeitschrift / Serie

5 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 30 Tagen
(1)
... seit 90 Tagen
(6)

Menü

Weitere Dienste

Einstellungen

Macroscale stress induced stabilization of coherent precipitates

Deformation Mechanisms Dominated by Decomposition of an Interfacial Misfit Dislocation Network in Ni/Ni3Al Multilayer Structures

A theoretical investigation of glide dislocations in BN/AlN heterojunctions

Transition from Screw-Type to Edge-Type Misfit Dislocations at InGaN/GaN Heterointerfaces

Regular Network of Misfit Dislocations at the BaZr0.8Y0.2O3−x/NdGaO3 Interface and Its Role in Proton Conductivity

Modification of the Peierls–Nabarro model for misfit dislocation

Full-Field Strain Mapping at a Ge/Si Heterostructure Interface

Theoretical Investigations for Strain Relaxation and Growth Mode of InAs Thin layers on GaAs(111)A

Enhanced Sn incorporation in GeSn epitaxial semiconductors via strain relaxation

Atomic study of fracture progress of Fe [110]/ TMC [100] ( TM = Ti , Zr and Hf ) semi-coherent interfaces

High-temperature annealing induced evolution of strain in AlN epitaxial films grown on sapphire substrates

Optimizing misfit dislocation glide kinetics for enhanced threading dislocation density reduction in Si1−xGex/Si(001) layers through dynamic growth rate control

Defect filtering for thermal expansion induced dislocations in III–V lasers on silicon

Dislocation nucleation facilitated by atomic segregation

Graphite, Graphene, and the Flat Band Superconductivity

Behavior of misfit dislocations in semipolar InGaN/GaN grown by MOVPE

Sub-nanometre channels embedded in two-dimensional materials

Germanium-on-silicon nitride waveguides for mid-infrared integrated photonics

Interband cascade light-emitting diodes grown on silicon substrates using GaSb buffer layer

Misfit dislocation structure and thermal boundary conductance of GaN/AlN interfaces

Resistivity size effect in epitaxial iridium layers

Non-radiative recombination at dislocations in InAs quantum dots grown on silicon

Large thickness dependence of the carrier mobility in a transparent oxide semiconductor, La-doped BaSnO3

Reduced dislocation growth leads to long lifetime InAs quantum dot lasers on silicon at high temperatures

Strain suppressed Sn incorporation in GeSn epitaxially grown on Ge/Si(001) substrate

Aktive Filter

Suchergebnisse filtern