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Influence of thickness and annealing temperature on the electrical, optical and structural properties of AZO thin films

Vacuum, 2013-03, Vol.89, p.127-131

2013

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Nonvolatile resistive switching in graphene oxide thin films

Applied physics letters, 2009-12, Vol.95 (23), p.232101-232101-3

2009

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Nonvolatile resistive switching memory based on amorphous carbon

Applied physics letters, 2010-04, Vol.96 (16), p.163505-163505-3

2010

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The electrical properties of n-ZnO/p-SnO heterojunction diodes

Applied physics letters, 2016-09, Vol.109 (12)

2016

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Strain and its effect on optical properties of Al-N codoped ZnO films

Journal of applied physics, 2006-01, Vol.99 (2), p.023503-023503-5

2006

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Optoelectronic neuromorphic thin-film transistors capable of selective attention and with ultra-low power dissipation

Nano energy, 2019-08, Vol.62, p.772-780

2019

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p -type conduction in N–Al co-doped ZnO thin films

Applied physics letters, 2004-10, Vol.85 (15), p.3134-3135

2004

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Effect of NH3 plasma treatment on the interfacial property between ultrathin HfO2 and strained Si0.65Ge0.35 substrate

Journal of applied physics, 2013-01, Vol.113 (4)

2013

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Local structure and energy-band alignment of HfO2 and HfO2–La2O3 on strained Si0.65Ge0.35

Journal of alloys and compounds, 2014-09, Vol.606, p.68-72

2014

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Improvement of reproducible resistance switching in polycrystalline tungsten oxide films by in situ oxygen annealing

Applied physics letters, 2010-02, Vol.96 (7), p.072103-072103-3

2010

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Effect of nitrogen passivation on the interfacial property and band offset of HfLaO/SiGe

Journal of physics. D, Applied physics, 2013-12, Vol.46 (50), p.505312-7

2013

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Advantages of using Ti-mesh type electrodes for flexible dye-sensitized solar cells

Nanotechnology, 2012-06, Vol.23 (22), p.225602-1-6

2012

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Coexistence of two types of metal filaments in oxide memristors

AIP advances, 2017-02, Vol.7 (2), p.025102-025102-6

2017

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Tunable ferromagnetic behavior in Cr doped ZnO nanorod arrays through defect engineering

Journal of materials chemistry. C, Materials for optical and electronic devices, 2014-01, Vol.2 (16), p.2992-2997

2014

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ZnO p - n homojunctions and ohmic contacts to Al-N-co-doped p -type ZnO

Applied physics letters, 2005-08, Vol.87 (9), p.092103-092103-3

2005

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Room-temperature deposition of transparent conductive Al-doped ZnO thin films using low energy ion bombardment

Applied physics. A, Materials science & processing, 2012-03, Vol.106 (4), p.961-966

2012

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Roles of silver oxide in the bipolar resistance switching devices with silver electrode

Applied physics letters, 2011-02, Vol.98 (7)

2011

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Effect of Mn doping on the nanostructure and optical properties of ZnO films synthesized by magnetron sputtering

Applied surface science, 2010-01, Vol.256 (7), p.2259-2262

2010

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Effect of growth temperature on characteristics of Cr-doped ZnO nanorods by magnetron sputtering

Applied physics. A, Materials science & processing, 2012-10, Vol.109 (1), p.173-179

2012

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Effect of Ta incorporation on the microstructure, electrical and optical properties of Hf1−xTaxO high-k film prepared by dual ion beam sputtering deposition

Vacuum, 2013-06, Vol.92, p.58-64

2013

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Formation of quasi-aligned ZnCdO nanorods and nanoneedles

Journal of crystal growth, 2005-10, Vol.283 (3), p.373-377

2005

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Rapid synthesis and photoluminescence of novel ZnO nanotetrapods

Journal of crystal growth, 2005-02, Vol.274 (3-4), p.447-452

2005

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Electrical characterization of ZnO-based homojunctions

Applied physics letters, 2006-07, Vol.89 (5), p.053501-053501-3

2006

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p-type ZnO films by codoping of nitrogen and aluminum and ZnO-based p–n homojunctions

Journal of crystal growth, 2005-10, Vol.283 (3), p.413-417

2005

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Effects of growth ambient on electrical properties of Al–N co-doped p-type ZnO films

Thin solid films, 2005-04, Vol.476 (2), p.272-275

2005

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Influence of thickness and annealing temperature on the electrical, optical and structural properties of AZO thin films

Nonvolatile resistive switching in graphene oxide thin films

Nonvolatile resistive switching memory based on amorphous carbon

The electrical properties of n-ZnO/p-SnO heterojunction diodes

Strain and its effect on optical properties of Al-N codoped ZnO films

Optoelectronic neuromorphic thin-film transistors capable of selective attention and with ultra-low power dissipation

p -type conduction in N–Al co-doped ZnO thin films

Effect of NH3 plasma treatment on the interfacial property between ultrathin HfO2 and strained Si0.65Ge0.35 substrate

Local structure and energy-band alignment of HfO2 and HfO2–La2O3 on strained Si0.65Ge0.35

Improvement of reproducible resistance switching in polycrystalline tungsten oxide films by in situ oxygen annealing

Effect of nitrogen passivation on the interfacial property and band offset of HfLaO/SiGe

Advantages of using Ti-mesh type electrodes for flexible dye-sensitized solar cells

Coexistence of two types of metal filaments in oxide memristors

Tunable ferromagnetic behavior in Cr doped ZnO nanorod arrays through defect engineering

ZnO p - n homojunctions and ohmic contacts to Al-N-co-doped p -type ZnO

Room-temperature deposition of transparent conductive Al-doped ZnO thin films using low energy ion bombardment

Roles of silver oxide in the bipolar resistance switching devices with silver electrode

Effect of Mn doping on the nanostructure and optical properties of ZnO films synthesized by magnetron sputtering

Effect of growth temperature on characteristics of Cr-doped ZnO nanorods by magnetron sputtering

Effect of Ta incorporation on the microstructure, electrical and optical properties of Hf1−xTaxO high-k film prepared by dual ion beam sputtering deposition

Formation of quasi-aligned ZnCdO nanorods and nanoneedles

Rapid synthesis and photoluminescence of novel ZnO nanotetrapods

Electrical characterization of ZnO-based homojunctions

p-type ZnO films by codoping of nitrogen and aluminum and ZnO-based p–n homojunctions

Effects of growth ambient on electrical properties of Al–N co-doped p-type ZnO films

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