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High-precision digital terahertz phase manipulation within a multichannel field perturbation coding chip

Nature photonics, 2021-10, Vol.15 (10), p.751-757

2021

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Self-driven WSe2 photodetectors enabled with asymmetrical van der Waals contact interfaces

NPJ 2D materials and applications, 2020-12, Vol.4 (1), p.1-9, Article 46

2020

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A thermal boundary resistance measurement method based on a designed chip with the heat source separated from the temperature sensor

Applied physics letters, 2023-02, Vol.122 (7)

2023

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Large phase modulation of THz wave via an enhanced resonant active HEMT metasurface

Nanophotonics (Berlin, Germany), 2019-01, Vol.8 (1), p.153-170

2019

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Acoustic charge transport induced by the surface acoustic wave in chemical doped graphene

Applied physics letters, 2016-10, Vol.109 (18)

2016

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Improved electrical performance of lateral β-Ga2O3 MOSFETs utilizing slanted fin channel structure

Applied physics letters, 2022-11, Vol.121 (20)

2022

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Oxygen annealing impact on β-Ga2O3 MOSFETs: Improved pinch-off characteristic and output power density

Applied physics letters, 2020-09, Vol.117 (13)

2020

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Effect of Polarization Coulomb Field Scattering on Parasitic Source Access Resistance and Extrinsic Transconductance in AlGaN/GaN Heterostructure FETs

IEEE transactions on electron devices, 2016-04, Vol.63 (4), p.1471-1477

2016

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Interplay between various active regions and the interband transition for AlGaN-based deep-ultraviolet light-emitting diodes to enable a reduced TM-polarized emission

Journal of applied physics, 2019-12, Vol.126 (24)

2019

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8.7 A/700 V β-Ga2O3 Schottky barrier diode demonstrated by oxygen annealing combined with self-aligned mesa termination

Applied physics express, 2024-03, Vol.17 (3), p.036504

2024

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Author Correction: High-precision digital terahertz phase manipulation within a multichannel field perturbation coding chip

Nature photonics, 2021-10, Vol.15 (10), p.788-788

2021

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Study of source access resistance at direct current quiescent points for AlGaN/GaN heterostructure field-effect transistors

Journal of applied physics, 2016-06, Vol.119 (22)

2016

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Acoustically induced current in graphene by aluminum nitride transducers

Applied physics letters, 2016-01, Vol.108 (3)

2016

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Preparation and electrical transport properties of quasi free standing bilayer graphene on SiC (0001) substrate by H intercalation

Applied physics letters, 2014-11, Vol.105 (18)

2014

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Green and blue emissions in phase-separated InGaN quantum wells

Journal of applied physics, 2013-10, Vol.114 (16)

2013

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Optimization Strategy of 4H-SiC Separated Absorption Charge and Multiplication Avalanche Photodiode Structure for High Ultraviolet Detection Efficiency

Nanoscale research letters, 2019-12, Vol.14 (1), p.396-18, Article 396

2019

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Study of Gate Width Influence on Extrinsic Transconductance in AlGaN/GaN Heterostructure Field-Effect Transistors With Polarization Coulomb Field Scattering

IEEE transactions on electron devices, 2016-10, Vol.63 (10), p.3908-3913

2016

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A high open-circuit voltage gallium nitride betavoltaic microbattery

Journal of micromechanics and microengineering, 2012-07, Vol.22 (7), p.74011-6

2012

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Ultrafast terahertz transparency boosting in graphene meta-cavities

Nanophotonics (Berlin, Germany), 2022-12, Vol.11 (21), p.4899-4907

2022

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Effects of rapid thermal annealing on the electrical properties of the AlGaN/AlN/GaN heterostructure field-effect transistors with Ti/Al/Ni/Au gate electrodes

Applied physics letters, 2014-08, Vol.105 (8)

2014

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Simulation and characterization of millimeter-wave InAlN/GaN high electron mobility transistors using Lombardi mobility model

Journal of applied physics, 2014-04, Vol.115 (16)

2014

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A study of the impact of gate metals on the performance of AlGaN/AlN/GaN heterostructure field-effect transistors

Applied physics letters, 2015-09, Vol.107 (11)

2015

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Schottky-Contact Technology in InAlN/GaN HEMTs for Breakdown Voltage Improvement

IEEE transactions on electron devices, 2013-03, Vol.60 (3), p.1075-1081

2013

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AlGaN/GaN Polarization-Doped Field-Effect Transistors With Graded Heterostructure

IEEE transactions on electron devices, 2014-12, Vol.61 (12), p.4084-4089

2014

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Impact of bulk traps in GaN buffer on the gate-lag transient characteristics of AlGaN/GaN HEMTs

Solid-state electronics, 2014-10, Vol.100, p.15-19

2014

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High-precision digital terahertz phase manipulation within a multichannel field perturbation coding chip

Self-driven WSe2 photodetectors enabled with asymmetrical van der Waals contact interfaces

A thermal boundary resistance measurement method based on a designed chip with the heat source separated from the temperature sensor

Large phase modulation of THz wave via an enhanced resonant active HEMT metasurface

Acoustic charge transport induced by the surface acoustic wave in chemical doped graphene

Improved electrical performance of lateral β-Ga2O3 MOSFETs utilizing slanted fin channel structure

Oxygen annealing impact on β-Ga2O3 MOSFETs: Improved pinch-off characteristic and output power density

Effect of Polarization Coulomb Field Scattering on Parasitic Source Access Resistance and Extrinsic Transconductance in AlGaN/GaN Heterostructure FETs

Interplay between various active regions and the interband transition for AlGaN-based deep-ultraviolet light-emitting diodes to enable a reduced TM-polarized emission

8.7 A/700 V β-Ga2O3 Schottky barrier diode demonstrated by oxygen annealing combined with self-aligned mesa termination

Author Correction: High-precision digital terahertz phase manipulation within a multichannel field perturbation coding chip

Study of source access resistance at direct current quiescent points for AlGaN/GaN heterostructure field-effect transistors

Acoustically induced current in graphene by aluminum nitride transducers

Preparation and electrical transport properties of quasi free standing bilayer graphene on SiC (0001) substrate by H intercalation

Green and blue emissions in phase-separated InGaN quantum wells

Optimization Strategy of 4H-SiC Separated Absorption Charge and Multiplication Avalanche Photodiode Structure for High Ultraviolet Detection Efficiency

Study of Gate Width Influence on Extrinsic Transconductance in AlGaN/GaN Heterostructure Field-Effect Transistors With Polarization Coulomb Field Scattering

A high open-circuit voltage gallium nitride betavoltaic microbattery

Ultrafast terahertz transparency boosting in graphene meta-cavities

Effects of rapid thermal annealing on the electrical properties of the AlGaN/AlN/GaN heterostructure field-effect transistors with Ti/Al/Ni/Au gate electrodes

Simulation and characterization of millimeter-wave InAlN/GaN high electron mobility transistors using Lombardi mobility model

A study of the impact of gate metals on the performance of AlGaN/AlN/GaN heterostructure field-effect transistors

Schottky-Contact Technology in InAlN/GaN HEMTs for Breakdown Voltage Improvement

AlGaN/GaN Polarization-Doped Field-Effect Transistors With Graded Heterostructure

Impact of bulk traps in GaN buffer on the gate-lag transient characteristics of AlGaN/GaN HEMTs

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