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Terahertz emission mechanism of magnesium doped indium nitride

Applied physics letters, 2009-12, Vol.95 (23), p.232104-232104-3

2009

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Nitrogen incorporation effects on gain properties of GaInNAs lasers: Experiment and theory

Applied physics letters, 2005-05, Vol.86 (20), p.201117-201117-3

2005

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Characteristics of InGaAsN-GaAsSb type-II “W” quantum wells

Journal of crystal growth, 2006-01, Vol.287 (2), p.615-619

2006

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Reliability studies of a 22nm SoC platform technology featuring 3-D tri-gate, optimized for ultra low power, high performance and high density application

2013 IEEE International Reliability Physics Symposium (IRPS), 2013, p.PI.2.1-PI.2.6

2013

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Effects of Ga-and Sb-precursor chemistry on the alloy composition in pseudomorphically strained GaAs1-ySby films grown via metalorganic vapor phase epitaxy

Journal of crystal growth, 2007-05, Vol.303 (2), p.456-465

2007

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Growth of strained GaAs1-ySby layers using metalorganic vapor phase epitaxy

Journal of crystal growth, 2007, Vol.298, p.154-158

2007

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Vibration analysis of sandwich rectangular plates with magnetorheological elastomer damping treatment

Smart materials and structures, 2013-03, Vol.22 (3), p.35010-1-8

Yeh, Jia-Yi

2013

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The effect of reactor pressure on selective area epitaxy of GaAs in a close-coupled showerhead reactor

Journal of crystal growth, 2004-01, Vol.261 (2), p.427-432

2004

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Increased monomolecular recombination in MOCVD grown 1.3- mu m InGaAsN-GaAsP-GaAs QW lasers from carrier lifetime measurements

IEEE photonics technology letters, 2005-05, Vol.17 (5)

2005

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Physics and characteristics of high performance 1200 nm InGaAs and 1300–1400 nm InGaAsN quantum well lasers obtained by metal–organic chemical vapour deposition

Journal of physics. Condensed matter, 2004-08, Vol.16 (31), p.S3277-S3318

2004

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Optical determination of the electron effective mass of strain compensated In0.4Ga0.6As0.995N0.005∕GaAs single quantum well

Applied physics letters, 2006-10, Vol.89 (17)

2006

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Long wavelength emission of InGaAsN∕GaAsSb type II “W” quantum wells

Applied physics letters, 2006-01, Vol.88 (5)

2006

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A 32nm low power RF CMOS SOC technology featuring high-k/metal gate

2010 Symposium on VLSI Technology, 2010, p.137-138

2010

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Temperature-sensitivity analysis of 1360-nm dilute-nitride quantum-well lasers

IEEE photonics technology letters, 2004-03, Vol.16 (3), p.741-743

2004

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An adaptive run-to-run optimizing controller for linear and nonlinear semiconductor processes

IEEE transactions on semiconductor manufacturing, 1998-05, Vol.11 (2), p.285-295

1998

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Characteristics of GaAsN∕GaAsSb type-II quantum wells grown by metalorganic vapor phase epitaxy on GaAs substrates

Journal of applied physics, 2005-12, Vol.98 (12)

2005

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High resolution finite volume scheme for the quantum hydrodynamic equations

Journal of computational physics, 2009-03, Vol.228 (5), p.1713-1732

2009

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Pb2+ cation ordering in Pb3(Mo4O6)4

Acta crystallographica. Section B, Structural science, 1991-08, Vol.47 (4), p.446-451

1991

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Wave propagations of a periodic sandwich beam by FEM and the transfer matrix method

Composite structures, 2006-05, Vol.73 (1), p.53-60

2006

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Low-threshold 1317-nm InGaAsN quantum-well lasers with GaAsN barriers

Applied physics letters, 2003-09, Vol.83 (13), p.2512-2514

2003

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Dynamic stability of a sandwich plate with a constraining layer and electrorheological fluid core

Journal of sound and vibration, 2005-07, Vol.285 (3), p.637-652

2005

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Extremely low threshold-current-density InGaAs quantum-well lasers with emission wavelength of 1215–1233 nm

Applied physics letters, 2003-06, Vol.82 (23), p.4038-4040

2003

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Experimental evidence of carrier leakage in InGaAsN quantum-well lasers

Applied physics letters, 2003-09, Vol.83 (11), p.2112-2114

2003

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High-performance 1200-nm InGaAs and 1300-nm InGaAsN quantum-well lasers by metalorganic chemical vapor deposition

IEEE journal of selected topics in quantum electronics, 2003-09, Vol.9 (5), p.1220-1227

2003

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Dynamic stability analysis of a rectangular orthotropic sandwich plate with an electrorheological fluid core

Composite structures, 2006, Vol.72 (1), p.33-41

2006

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Terahertz emission mechanism of magnesium doped indium nitride

Nitrogen incorporation effects on gain properties of GaInNAs lasers: Experiment and theory

Characteristics of InGaAsN-GaAsSb type-II “W” quantum wells

Reliability studies of a 22nm SoC platform technology featuring 3-D tri-gate, optimized for ultra low power, high performance and high density application

Effects of Ga-and Sb-precursor chemistry on the alloy composition in pseudomorphically strained GaAs1-ySby films grown via metalorganic vapor phase epitaxy

Growth of strained GaAs1-ySby layers using metalorganic vapor phase epitaxy

Vibration analysis of sandwich rectangular plates with magnetorheological elastomer damping treatment

The effect of reactor pressure on selective area epitaxy of GaAs in a close-coupled showerhead reactor

Increased monomolecular recombination in MOCVD grown 1.3- mu m InGaAsN-GaAsP-GaAs QW lasers from carrier lifetime measurements

Physics and characteristics of high performance 1200 nm InGaAs and 1300–1400 nm InGaAsN quantum well lasers obtained by metal–organic chemical vapour deposition

Optical determination of the electron effective mass of strain compensated In0.4Ga0.6As0.995N0.005∕GaAs single quantum well

Long wavelength emission of InGaAsN∕GaAsSb type II “W” quantum wells

A 32nm low power RF CMOS SOC technology featuring high-k/metal gate

Temperature-sensitivity analysis of 1360-nm dilute-nitride quantum-well lasers

An adaptive run-to-run optimizing controller for linear and nonlinear semiconductor processes

Characteristics of GaAsN∕GaAsSb type-II quantum wells grown by metalorganic vapor phase epitaxy on GaAs substrates

High resolution finite volume scheme for the quantum hydrodynamic equations

Pb2+ cation ordering in Pb3(Mo4O6)4

Wave propagations of a periodic sandwich beam by FEM and the transfer matrix method

Low-threshold 1317-nm InGaAsN quantum-well lasers with GaAsN barriers

Dynamic stability of a sandwich plate with a constraining layer and electrorheological fluid core

Extremely low threshold-current-density InGaAs quantum-well lasers with emission wavelength of 1215–1233 nm

Experimental evidence of carrier leakage in InGaAsN quantum-well lasers

High-performance 1200-nm InGaAs and 1300-nm InGaAsN quantum-well lasers by metalorganic chemical vapor deposition

Dynamic stability analysis of a rectangular orthotropic sandwich plate with an electrorheological fluid core

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