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SbSI microrod based flexible photodetectors

Journal of physics. D, Applied physics, 2020-08, Vol.53 (34), p.345106

2020

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Negative capacitance switching via VO2 band gap engineering driven by electric field

Applied physics letters, 2015-03, Vol.106 (9)

2015

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Simple method preparation for ultrathin VO2 thin film and control: nanoparticle morphology and optical transmittance

Japanese Journal of Applied Physics, 2019-05, Vol.58 (5), p.050917

2019

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Continuously Producing Watersteam and Concentrated Brine from Seawater by Hanging Photothermal Fabrics under Sunlight

Advanced functional materials, 2019-10, Vol.29 (43), p.n/a

2019

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Synthesis and electrochemical property of few-layer molybdenum disulfide nanosheets

Japanese Journal of Applied Physics, 2016-12, Vol.55 (12), p.125201

2016

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Twinning effect on photoluminescence spectra of ZnSe nanowires

Journal of applied physics, 2014-11, Vol.116 (17)

2014

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Strain distribution and Raman spectroscopy in individual Ge/CdSe biaxial nanowires

Japanese Journal of Applied Physics, 2015-02, Vol.54 (2), p.25001-1-025001-7

2015

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Orbital change manipulation metal-insulator transition temperature in W-doped VO2

Physical chemistry chemical physics : PCCP, 2015-05, Vol.17 (17), p.11638-11646

2015

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The effect of Argon pressure dependent V thin film on the phase transition process of (020) VO2 thin film

Applied surface science, 2018-01, Vol.427, p.304-311

2018

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Orbital electronic occupation effect on metal-insulator transition in TixV1−xO2

Journal of physics. Condensed matter, 2017-08, Vol.29 (35)

2017

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Dynamic localization and Fano resonance in double-dot molecules with microwave radiation

Physica. E, Low-dimensional systems & nanostructures, 2006-08, Vol.34 (1), p.468-471

2006

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Sulfur-passivation mechanism analysis of GaInAsSb photodetectors

Journal of applied physics, 2003-08, Vol.94 (3), p.1295-1297

2003

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Photoluminescence of excitons and defects in ZnSe-based longitudinal twinning nanowires

Journal of physics. D, Applied physics, 2014-12, Vol.47 (48), p.485302-7

2014

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Electrical and Structural Properties of Refractory Metal Multilayer Au/Ti/W/Ti Ohmic Contacts to n-GaAs

Japanese Journal of Applied Physics, 2003, Vol.42 (Part 1, No. 5A), p.2609-2611

2003

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Sulphur passivation of the InGaAsSb/GaSb photodiodes

Applied physics letters, 2002-02, Vol.80 (7), p.1303-1305

2002

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GaInAsSb/GaSb long wavelength mid-IR detectors

2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443), 2001, Vol.2, p.1289-1291 vol.2

2001

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Comprehensive Passivation for High‐Performance Quasi‐2D Perovskite LEDs

Small (Weinheim an der Bergstrasse, Germany), 2023-03, Vol.19 (11), p.e2206927-n/a

2023

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SbSI microrod based flexible photodetectors

Negative capacitance switching via VO2 band gap engineering driven by electric field

Simple method preparation for ultrathin VO2 thin film and control: nanoparticle morphology and optical transmittance

Continuously Producing Watersteam and Concentrated Brine from Seawater by Hanging Photothermal Fabrics under Sunlight

Synthesis and electrochemical property of few-layer molybdenum disulfide nanosheets

Twinning effect on photoluminescence spectra of ZnSe nanowires

Strain distribution and Raman spectroscopy in individual Ge/CdSe biaxial nanowires

Orbital change manipulation metal-insulator transition temperature in W-doped VO2

The effect of Argon pressure dependent V thin film on the phase transition process of (020) VO2 thin film

Orbital electronic occupation effect on metal-insulator transition in TixV1−xO2

Dynamic localization and Fano resonance in double-dot molecules with microwave radiation

Sulfur-passivation mechanism analysis of GaInAsSb photodetectors

Photoluminescence of excitons and defects in ZnSe-based longitudinal twinning nanowires

Electrical and Structural Properties of Refractory Metal Multilayer Au/Ti/W/Ti Ohmic Contacts to n-GaAs

Sulphur passivation of the InGaAsSb/GaSb photodiodes

GaInAsSb/GaSb long wavelength mid-IR detectors

Comprehensive Passivation for High‐Performance Quasi‐2D Perovskite LEDs

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