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Theoretical Studies of 2D Electron Gas Distributions and Scattering Characteristics in Double‐Channel n‐Al0.3Ga0.7N/GaN/i‐AlxGa1−xN/GaN High‐Electron‐Mobility Transistors

Physica status solidi. A, Applications and materials science, 2024-05, Vol.221 (10)

2024

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Atomic-Scale Hidden Point-Defect Complexes Induce Ultrahigh-Irradiation Hardening in Tungsten

Nano letters, 2021-07, Vol.21 (13), p.5798-5804

2021

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A Threshold‐Voltage and Drain–Source Current Model for Double‐Channel AlxGa1−xN/GaN/AlyGa1−yN/GaN High‐Electron‐Mobility Transistors

Physica status solidi. A, Applications and materials science, 2023-12, Vol.220 (23), p.n/a

2023

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Optimized Electronic Modification of S-Doped CuO Induced by Oxidative Reconstruction for Coupling Glycerol Electrooxidation with Hydrogen Evolution

Nano-micro letters, 2023-12, Vol.15 (1), p.190-190, Article 190

2023

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Physics-based modeling and characterization of low frequency noise behavior for AlxGa1−xN/GaN HEMT

AIP advances, 2024-03, Vol.14 (3), p.035206-035206-7

2024

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A Low-Power Ring Oscillator Using Pull-Up Control Scheme Integrated by Metal-Oxide TFTs

IEEE transactions on electron devices, 2017-12, Vol.64 (12), p.4946-4951

2017

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A Low-Power High-Stability Flexible Scan Driver Integrated by IZO TFTs

IEEE transactions on electron devices, 2016-04, Vol.63 (4), p.1779-1782

2016

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Temperature dependence of the electrical characteristics of ZnO thin film transistor with high-k NbLaO gate dielectric

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2021-01, Vol.39 (1)

2021

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Gate capacitance model of AlGaN/GaN high electron mobility transistor

Wuli xuebao, 2021-11, Vol.70 (21), p.217301

2021

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A physical model of cylindrical surrounding double-gate metal-oxide-semiconductor field-effect transistor

Wuli xuebao, 2021-08, Vol.70 (15), p.157302

2021

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An Improvement of the Capacitance-Voltage Method to Determine the Band Offsets in a-Si:H/c-Si Heterojunctions

IEEE transactions on electron devices, 2014-02, Vol.61 (2), p.394-399

2014

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Preparation and Characterization of Bioplastic-Based Green Renewable Composites from Tapioca with Acetyl Tributyl Citrate as a Plasticizer

Materials, 2014-08, Vol.7 (8), p.5617-5632

2014

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Shot noise model of the short channel metal-oxide-semiconductor field-effect transistor

Wuli xuebao, 2020-09, Vol.69 (17), p.177102

2020

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New Solutions of Three Nonlinear Space- and Time-Fractional Partial Differential Equations in Mathematical Physics

Communications in theoretical physics, 2014-11, Vol.62 (5), p.689-696

2014

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Interfacial reaction and failure mechanism of Cu/Ni/SnAg1.8/Cu flip chip Cu pillar bump under thermoelectric stresses

Wuli xuebao, 2018-01, Vol.67 (2), p.28101

2018

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An Analytical Subthreshold Model for Polysilicon Thin-Film Transistors by a Quasi-Two-Dimensional Solution

IEEE transactions on electron devices, 2011-09, Vol.58 (9), p.3230-3235

2011

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Improvement in the electrical performance and bias-stress stability of dual-active-layered silicon zinc oxide/zinc oxide thin-film transistor

Chinese physics B, 2016-08, Vol.25 (8), p.452-457

刘玉荣赵高位黎沛涛姚若河

2016

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Photovoltage analysis of a heterojunction solar cell

Chinese physics B, 2011-05, Vol.20 (5), p.359-362

熊超姚若河耿魁伟

2011

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A Physics-Based Effective Mobility Model for Polycrystalline Silicon Thin Film Transistor Considering Discontinuous Energy Band at Grain Boundaries

Japanese Journal of Applied Physics, 2011-09, Vol.50 (9), p.094302-094302-6

2011

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Control of grain size during low-temperature growth of polycrystalline silicon films

Wuli xuebao, 2004-11, Vol.53 (11), p.3950

2004

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Theoretical Studies of 2D Electron Gas Distributions and Scattering Characteristics in Double‐Channel n‐Al0.3Ga0.7N/GaN/i‐AlxGa1−xN/GaN High‐Electron‐Mobility Transistors

Atomic-Scale Hidden Point-Defect Complexes Induce Ultrahigh-Irradiation Hardening in Tungsten

A Threshold‐Voltage and Drain–Source Current Model for Double‐Channel AlxGa1−xN/GaN/AlyGa1−yN/GaN High‐Electron‐Mobility Transistors

Optimized Electronic Modification of S-Doped CuO Induced by Oxidative Reconstruction for Coupling Glycerol Electrooxidation with Hydrogen Evolution

Physics-based modeling and characterization of low frequency noise behavior for AlxGa1−xN/GaN HEMT

A Low-Power Ring Oscillator Using Pull-Up Control Scheme Integrated by Metal-Oxide TFTs

A Low-Power High-Stability Flexible Scan Driver Integrated by IZO TFTs

Temperature dependence of the electrical characteristics of ZnO thin film transistor with high-k NbLaO gate dielectric

Gate capacitance model of AlGaN/GaN high electron mobility transistor

A physical model of cylindrical surrounding double-gate metal-oxide-semiconductor field-effect transistor

An Improvement of the Capacitance-Voltage Method to Determine the Band Offsets in a-Si:H/c-Si Heterojunctions

Preparation and Characterization of Bioplastic-Based Green Renewable Composites from Tapioca with Acetyl Tributyl Citrate as a Plasticizer

Shot noise model of the short channel metal-oxide-semiconductor field-effect transistor

New Solutions of Three Nonlinear Space- and Time-Fractional Partial Differential Equations in Mathematical Physics

Interfacial reaction and failure mechanism of Cu/Ni/SnAg1.8/Cu flip chip Cu pillar bump under thermoelectric stresses

An Analytical Subthreshold Model for Polysilicon Thin-Film Transistors by a Quasi-Two-Dimensional Solution

Improvement in the electrical performance and bias-stress stability of dual-active-layered silicon zinc oxide/zinc oxide thin-film transistor

Photovoltage analysis of a heterojunction solar cell

A Physics-Based Effective Mobility Model for Polycrystalline Silicon Thin Film Transistor Considering Discontinuous Energy Band at Grain Boundaries

Control of grain size during low-temperature growth of polycrystalline silicon films

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