UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

On the evaluation of a certain class of Feynman diagrams in x-space: Sunrise-type topologies at any loop order

Annals of physics, 2007-10, Vol.322 (10), p.2374-2445

2007

Volltextzugriff (PDF)

Molecular dynamics simulations of the adsorption of industrial relevant silane molecules at a zinc oxide surface

The Journal of chemical physics, 2003-11, Vol.119 (18), p.9719-9728

2003

Volltextzugriff (PDF)

Contribution of defects to electronic, structural, and thermodynamic properties of amorphous silicon

Journal of applied physics, 1994-06, Vol.75 (11), p.7266-7286

1994

Volltextzugriff (PDF)

Structural properties of a-Si:H related to ion energy distributions in VHF silane deposition plasmas

Journal of non-crystalline solids, 1998-06, Vol.226 (3), p.205-216

1998

Volltextzugriff (PDF)

Two-dimensional ordering of (In,Ga)As quantum dots in vertical multilayers grown on GaAs(100) and ( n 11 )

Applied physics letters, 2007-10, Vol.91 (17), p.173118-173118-3

2007

Volltextzugriff (PDF)

Interaction of adsorbed organosilanes with polar zinc oxide surfaces: a molecular dynamics study comparing two models for the metal oxide surface

Chemical physics letters, 2004-07, Vol.393 (1), p.107-111

2004

Volltextzugriff (PDF)

Initial stages of chain formation in a single layer of (In,Ga)As quantum dots grown on GaAs (100)

Applied physics letters, 2007-08, Vol.91 (9), p.093110-093110-3

2007

Volltextzugriff (PDF)

Positive ions as growth precursors in plasma enhanced chemical vapor deposition of hydrogenated amorphous silicon

Applied physics letters, 1999-08, Vol.75 (5), p.609-611

1999

Volltextzugriff (PDF)

Electron-ion coincidence measurements on CO after C 1s and O 1s photoabsorption

Journal of physics. B, Atomic, molecular, and optical physics, 1999-06, Vol.32 (11), p.2503-2515

1999

Volltextzugriff (PDF)

Coherence between the photoionization of different inner-shell vacancy states of argon

Physical review letters, 1993-11, Vol.71 (18), p.2875-2878

1993

Volltextzugriff (PDF)

Nanoclustering of hydrogen in ion-implanted and plasma-grown amorphous silicon

Physical review. B, Condensed matter, 1998-11, Vol.58 (19), p.12853-12864

1998

Volltextzugriff (PDF)

Threshold effects in Auger spectra of photoionized argon

Journal of physics. B, Atomic, molecular, and optical physics, 1992-05, Vol.25 (9), p.2007-2015

1992

Volltextzugriff (PDF)

Role of ions in PECVD of amorphous silicon

Surface & coatings technology, 1995-09, Vol.74 (1-3), p.63-66

1995

Volltextzugriff (PDF)

Deposition-rate reduction through improper substrate-to-electrode attachment in very-high-frequency deposition of a -Si:H

Journal of applied physics, 1996-09, Vol.80 (6), p.3546-3551

1996

Volltextzugriff (PDF)

Sheath thickness in very-high-frequency plasma chemical vapor deposition of hydrogenated amorphous silicon

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1997-05, Vol.15 (3), p.654-658

1997

Volltextzugriff (PDF)

An angle-resolving cylindrical mirror analyser for measurements of photo- and Auger electrons

Journal of electron spectroscopy and related phenomena, 1993-11, Vol.63 (4), p.379-392

1993

Volltextzugriff (PDF)

A-Si:H Solar Cells Deposited Using VHF–PECVD

MRS proceedings, 1996, Vol.420, Article 21

1996

Volltextzugriff (PDF)

Plasma Induced Changes to TCO/a-Si:H Interfaces

MRS proceedings, 1996, Vol.420, Article 57

1996

Volltextzugriff (PDF)

Study of the rapid thermal nitridation and silicidation of Ti using elastic recoil detection. II: Ti on SiO2

Journal of applied physics, 1988-05, Vol.63 (10), p.5110-5114

1988

Volltextzugriff (PDF)

Structural order in thin a -Si:H films

Journal of applied physics, 1995-08, Vol.78 (3), p.1964-1967

1995

Volltextzugriff (PDF)

Survey of top quark polarization at a polarized linear e + e − collider

Physical review. D, Particles, fields, gravitation, and cosmology, 2011-03, Vol.83 (5), Article 054018

2011

Volltextzugriff (PDF)

Structural changes in a-Si:H during annealing

Physica. B, Condensed matter, 1991-04, Vol.170 (1-4), p.281-284

1991

Volltextzugriff (PDF)

Study of the rapid thermal nitridation and silicidation of Ti using elastic recoil detection. I: Ti on Si

Journal of applied physics, 1988-05, Vol.63 (10), p.5104-5109

1988

Volltextzugriff (PDF)

Ion Energy Distributions in Silane-Hydrogen Plasmas

MRS proceedings, 1996, Vol.420, Article 461

1996

Volltextzugriff (PDF)

Hydrogenation during thermal nitridation of silicon dioxide

Journal of applied physics, 1986-04, Vol.59 (8), p.2765-2772

1986

Volltextzugriff (PDF)

1 – 25 von 33

Suche als RSS-Feed

Aktive Filter

ThemaPhysics

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(29)
Mit Volltextzugriff
(29)

Publikationsform

Artikel
(29)
Tagungsberichte
(4)

Sprache

Englisch
(33)

Erscheinungsjahr

n.n

Menü

Weitere Dienste

Einstellungen

On the evaluation of a certain class of Feynman diagrams in x-space: Sunrise-type topologies at any loop order

Molecular dynamics simulations of the adsorption of industrial relevant silane molecules at a zinc oxide surface

Contribution of defects to electronic, structural, and thermodynamic properties of amorphous silicon

Structural properties of a-Si:H related to ion energy distributions in VHF silane deposition plasmas

Two-dimensional ordering of (In,Ga)As quantum dots in vertical multilayers grown on GaAs(100) and ( n 11 )

Interaction of adsorbed organosilanes with polar zinc oxide surfaces: a molecular dynamics study comparing two models for the metal oxide surface

Initial stages of chain formation in a single layer of (In,Ga)As quantum dots grown on GaAs (100)

Positive ions as growth precursors in plasma enhanced chemical vapor deposition of hydrogenated amorphous silicon

Electron-ion coincidence measurements on CO after C 1s and O 1s photoabsorption

Coherence between the photoionization of different inner-shell vacancy states of argon

Nanoclustering of hydrogen in ion-implanted and plasma-grown amorphous silicon

Threshold effects in Auger spectra of photoionized argon

Role of ions in PECVD of amorphous silicon

Deposition-rate reduction through improper substrate-to-electrode attachment in very-high-frequency deposition of a -Si:H

Sheath thickness in very-high-frequency plasma chemical vapor deposition of hydrogenated amorphous silicon

An angle-resolving cylindrical mirror analyser for measurements of photo- and Auger electrons

A-Si:H Solar Cells Deposited Using VHF–PECVD

Plasma Induced Changes to TCO/a-Si:H Interfaces

Study of the rapid thermal nitridation and silicidation of Ti using elastic recoil detection. II: Ti on SiO2

Structural order in thin a -Si:H films

Survey of top quark polarization at a polarized linear e + e − collider

Structural changes in a-Si:H during annealing

Study of the rapid thermal nitridation and silicidation of Ti using elastic recoil detection. I: Ti on Si

Ion Energy Distributions in Silane-Hydrogen Plasmas

Hydrogenation during thermal nitridation of silicon dioxide

Aktive Filter

Suchergebnisse filtern