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Electron Injection in Metal Assisted Chemical Etching as a Fundamental Mechanism for Electroless Electricity Generation

The journal of physical chemistry letters, 2022-06, Vol.13 (24), p.5648-5653

2022

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Near-unity quantum efficiency of broadband black silicon photodiodes with an induced junction

Nature photonics, 2016-12, Vol.10 (12), p.777-781

2016

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Surface passivation of black silicon phosphorus emitters with atomic layer deposited SiO2/Al2O3 stacks

Energy procedia, 2017-09, Vol.124, p.307-312

2017

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Contactless analysis of surface passivation and charge transfer at the TiO2–Si interface

Physical chemistry chemical physics : PCCP, 2024-05, Vol.26 (21), p.15268-15276

2024

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MACE nano-texture process applicable for both single- and multi-crystalline diamond-wire sawn Si solar cells

Solar energy materials and solar cells, 2019-03, Vol.191, p.1-8

2019

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Efficient photon capture on germanium surfaces using industrially feasible nanostructure formation

Nanotechnology, 2021-01, Vol.32 (3), p.035301

2021

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Improved emitter performance of RIE black silicon through the application of in-situ oxidation during POCl3 diffusion

Solar energy materials and solar cells, 2020-06, Vol.210, p.110480, Article 110480

2020

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Harnessing Carrier Multiplication in Silicon Solar Cells Using UV Photons

IEEE photonics technology letters, 2021-12, Vol.33 (24), p.1415-1418

2021

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IEEE_Xplore

Effect of MACE Parameters on Electrical and Optical Properties of ALD Passivated Black Silicon

IEEE journal of photovoltaics, 2019-07, Vol.9 (4), p.974-979

2019

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IEEE_Xplore

Comparison of SiNx‐Based Surface Passivation Between Germanium and Silicon

Physica status solidi. A, Applications and materials science, 2023-01, Vol.220 (2), p.n/a

2023

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Impact of doping and silicon substrate resistivity on the blistering of atomic-layer-deposited aluminium oxide

Applied surface science, 2020-08, Vol.522, p.146400, Article 146400

2020

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Boron-Implanted Black Silicon Photodiode with Close-to-Ideal Responsivity from 200 to 1000 nm

ACS photonics, 2023-06, Vol.10 (6), p.1735-1741

2023

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Al‐neal Degrades Al2O3 Passivation of Silicon Surface

Physica status solidi. A, Applications and materials science, 2021-12, Vol.218 (23), p.n/a

2021

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Impact of Standard Cleaning on Electrical and Optical Properties of Phosphorus-Doped Black Silicon

IEEE journal of photovoltaics, 2018-05, Vol.8 (3), p.697-702

2018

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IEEE_Xplore

Full recovery of red zone in p-type high-performance multicrystalline silicon

Solar energy materials and solar cells, 2017-12, Vol.173, p.120-127

2017

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AlOx surface passivation of black silicon by spatial ALD: Stability under light soaking and damp heat exposure

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2020-03, Vol.38 (2)

2020

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Passivation of Detector‐Grade Float Zone Silicon with Atomic Layer Deposited Aluminum Oxide

Physica status solidi. A, Applications and materials science, 2019-09, Vol.216 (17), p.n/a

2019

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Impact of phosphorus gettering parameters and initial iron level on silicon solar cell properties

Progress in photovoltaics, 2013-08, Vol.21 (5), p.1127-1135

2013

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Dissociation and Formation Kinetics of Iron–Boron Pairs in Silicon after Phosphorus Implantation Gettering

Physica status solidi. A, Applications and materials science, 2019-09, Vol.216 (17), p.n/a

2019

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Is carrier mobility a limiting factor for charge transfer in TiO2/Si devices? A study by transient reflectance spectroscopy

Surfaces and interfaces, 2023-06, Vol.38, Article 102871

2023

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Efficient surface passivation of black silicon using spatial atomic layer deposition

Energy procedia, 2017-09, Vol.124, p.282-287

2017

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Plasma-enhanced atomic layer deposited SiO2 enables positive thin film charge and surface recombination velocity of 1.3 cm/s on germanium

Applied physics letters, 2023-05, Vol.122 (19)

2023

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Atomic Layer Deposition of Titanium Oxide-Based Films for Semiconductor Applications—Effects of Precursor and Operating Conditions

Materials, 2023-08, Vol.16 (16), p.5522

2023

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Electronic Quality Improvement of Highly Defective Quasi‐Mono Silicon Material by Phosphorus Diffusion Gettering

Advanced electronic materials, 2017-06, Vol.3 (6), p.n/a

2017

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Gettering of Iron in Silicon Solar Cells With Implanted Emitters

IEEE journal of photovoltaics, 2014-01, Vol.4 (1), p.142-147

2014

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IEEE_Xplore

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Electron Injection in Metal Assisted Chemical Etching as a Fundamental Mechanism for Electroless Electricity Generation

Near-unity quantum efficiency of broadband black silicon photodiodes with an induced junction

Surface passivation of black silicon phosphorus emitters with atomic layer deposited SiO2/Al2O3 stacks

Contactless analysis of surface passivation and charge transfer at the TiO2–Si interface

MACE nano-texture process applicable for both single- and multi-crystalline diamond-wire sawn Si solar cells

Efficient photon capture on germanium surfaces using industrially feasible nanostructure formation

Improved emitter performance of RIE black silicon through the application of in-situ oxidation during POCl3 diffusion

Harnessing Carrier Multiplication in Silicon Solar Cells Using UV Photons

Effect of MACE Parameters on Electrical and Optical Properties of ALD Passivated Black Silicon

Comparison of SiNx‐Based Surface Passivation Between Germanium and Silicon

Impact of doping and silicon substrate resistivity on the blistering of atomic-layer-deposited aluminium oxide

Boron-Implanted Black Silicon Photodiode with Close-to-Ideal Responsivity from 200 to 1000 nm

Al‐neal Degrades Al2O3 Passivation of Silicon Surface

Impact of Standard Cleaning on Electrical and Optical Properties of Phosphorus-Doped Black Silicon

Full recovery of red zone in p-type high-performance multicrystalline silicon

AlOx surface passivation of black silicon by spatial ALD: Stability under light soaking and damp heat exposure

Passivation of Detector‐Grade Float Zone Silicon with Atomic Layer Deposited Aluminum Oxide

Impact of phosphorus gettering parameters and initial iron level on silicon solar cell properties

Dissociation and Formation Kinetics of Iron–Boron Pairs in Silicon after Phosphorus Implantation Gettering

Is carrier mobility a limiting factor for charge transfer in TiO2/Si devices? A study by transient reflectance spectroscopy

Efficient surface passivation of black silicon using spatial atomic layer deposition

Plasma-enhanced atomic layer deposited SiO2 enables positive thin film charge and surface recombination velocity of 1.3 cm/s on germanium

Atomic Layer Deposition of Titanium Oxide-Based Films for Semiconductor Applications—Effects of Precursor and Operating Conditions

Electronic Quality Improvement of Highly Defective Quasi‐Mono Silicon Material by Phosphorus Diffusion Gettering

Gettering of Iron in Silicon Solar Cells With Implanted Emitters

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